Purification of metallurgical-grade silicon in fractional melting process

Woosoon Lee, Wooyoung Yoon, Choonghwan Park

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

The fractional melting process involves heating an alloy within its liquid-solid region, while simultaneously ejecting liquid from the solid-liquid mixture (the cake). The extent of purification obtained is comparable to that obtained in multi-pass zone refining. A new fractional melting process, in which the centrifugal force is used for separating the liquid from the cake, was developed and applied to the purification of metallurgical grade Si (MG-Si). The major impurities in MG-Si such as Fe, Ti, Al, and Cu can significantly degrade the efficiency of solar cells. So it is important to remove these metal elements from MG-Si to obtain high-quality silicon. Since these elements have low segregation coefficients in silicon, high purification is possible through the fractional melting process. By applying the fractional melting method, a mean refining ratio of 93% with a wetness of 0.038 was achieved during the refining of 2N-Si. A further increase in the refining ratio can be realized by either controlling the processing parameters or reducing the solid fraction.

Original languageEnglish
Pages (from-to)146-148
Number of pages3
JournalJournal of Crystal Growth
Volume312
Issue number1
DOIs
Publication statusPublished - 2009 Dec 15

Fingerprint

Silicon
purification
Purification
grade
refining
Melting
melting
Refining
Liquids
silicon
liquids
Zone melting
zone melting
centrifugal force
Industrial heating
Chemical elements
moisture content
Solar cells
solar cells
Metals

Keywords

  • A1. Fractional melting
  • A1. Purification
  • A1. Refining
  • A1. Wetness
  • B2. Metallurgical grade silicon

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Purification of metallurgical-grade silicon in fractional melting process. / Lee, Woosoon; Yoon, Wooyoung; Park, Choonghwan.

In: Journal of Crystal Growth, Vol. 312, No. 1, 15.12.2009, p. 146-148.

Research output: Contribution to journalArticle

Lee, Woosoon ; Yoon, Wooyoung ; Park, Choonghwan. / Purification of metallurgical-grade silicon in fractional melting process. In: Journal of Crystal Growth. 2009 ; Vol. 312, No. 1. pp. 146-148.
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