@inproceedings{15881d8107a34f5d84dc029a844bff2f,
title = "Pushing the performance limits of SiGe HBT technology",
abstract = "The implementation of challenging novel materials and process techniques has led to remarkable device improvements in state-of-the-art high-performance SiGe HBTs, rivaling their III-V compound semiconductor counterparts. Vertical scaling, lateral scaling, and device structure innovation required to improve SiGe HBTs performance have benefited from advanced materials and process techniques being developed for next generation CMOS technology. In this work, we present a review of recent process and materials development enabling operational speeds of SiGe HBTs in excess of 350 GHz. In addition, challenges of new process technologies and materials implementation to improve the device performance will be discussed. copyright The Electrochemical Society.",
author = "Marwan Khater and Thomas Adam and Rieh, {Jae Sung} and Kathryn Schonenberg and Francois Pagette and Kenneth Stein and Jeng, {Shwu Jen} and David Ahlgren and Gregory Freeman",
year = "2006",
doi = "10.1149/1.2355832",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "7",
pages = "341--353",
booktitle = "SiGe and Ge",
edition = "7",
note = "SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting ; Conference date: 29-10-2006 Through 03-11-2006",
}