Pushing the performance limits of SiGe HBT technology

Marwan Khater, Thomas Adam, Jae-Sung Rieh, Kathryn Schonenberg, Francois Pagette, Kenneth Stein, Shwu Jen Jeng, David Ahlgren, Gregory Freeman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

The implementation of challenging novel materials and process techniques has led to remarkable device improvements in state-of-the-art high-performance SiGe HBTs, rivaling their III-V compound semiconductor counterparts. Vertical scaling, lateral scaling, and device structure innovation required to improve SiGe HBTs performance have benefited from advanced materials and process techniques being developed for next generation CMOS technology. In this work, we present a review of recent process and materials development enabling operational speeds of SiGe HBTs in excess of 350 GHz. In addition, challenges of new process technologies and materials implementation to improve the device performance will be discussed. copyright The Electrochemical Society.

Original languageEnglish
Title of host publicationECS Transactions
Pages341-353
Number of pages13
Volume3
Edition7
DOIs
Publication statusPublished - 2006
EventSiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, Mexico
Duration: 2006 Oct 292006 Nov 3

Other

OtherSiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting
CountryMexico
CityCancun
Period06/10/2906/11/3

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Heterojunction bipolar transistors
Innovation

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Khater, M., Adam, T., Rieh, J-S., Schonenberg, K., Pagette, F., Stein, K., ... Freeman, G. (2006). Pushing the performance limits of SiGe HBT technology. In ECS Transactions (7 ed., Vol. 3, pp. 341-353) https://doi.org/10.1149/1.2355832

Pushing the performance limits of SiGe HBT technology. / Khater, Marwan; Adam, Thomas; Rieh, Jae-Sung; Schonenberg, Kathryn; Pagette, Francois; Stein, Kenneth; Jeng, Shwu Jen; Ahlgren, David; Freeman, Gregory.

ECS Transactions. Vol. 3 7. ed. 2006. p. 341-353.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Khater, M, Adam, T, Rieh, J-S, Schonenberg, K, Pagette, F, Stein, K, Jeng, SJ, Ahlgren, D & Freeman, G 2006, Pushing the performance limits of SiGe HBT technology. in ECS Transactions. 7 edn, vol. 3, pp. 341-353, SiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting, Cancun, Mexico, 06/10/29. https://doi.org/10.1149/1.2355832
Khater M, Adam T, Rieh J-S, Schonenberg K, Pagette F, Stein K et al. Pushing the performance limits of SiGe HBT technology. In ECS Transactions. 7 ed. Vol. 3. 2006. p. 341-353 https://doi.org/10.1149/1.2355832
Khater, Marwan ; Adam, Thomas ; Rieh, Jae-Sung ; Schonenberg, Kathryn ; Pagette, Francois ; Stein, Kenneth ; Jeng, Shwu Jen ; Ahlgren, David ; Freeman, Gregory. / Pushing the performance limits of SiGe HBT technology. ECS Transactions. Vol. 3 7. ed. 2006. pp. 341-353
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