Pushing the performance limits of SiGe HBT technology

Marwan Khater, Thomas Adam, Jae Sung Rieh, Kathryn Schonenberg, Francois Pagette, Kenneth Stein, Shwu Jen Jeng, David Ahlgren, Gregory Freeman

Research output: Contribution to journalConference article

7 Citations (Scopus)

Abstract

The implementation of challenging novel materials and process techniques has led to remarkable device improvements in state-of-the-art high-performance SiGe HBTs, rivaling their III-V compound semiconductor counterparts. Vertical scaling, lateral scaling, and device structure innovation required to improve SiGe HBTs performance have benefited from advanced materials and process techniques being developed for next generation CMOS technology. In this work, we present a review of recent process and materials development enabling operational speeds of SiGe HBTs in excess of 350 GHz. In addition, challenges of new process technologies and materials implementation to improve the device performance will be discussed. copyright The Electrochemical Society.

Original languageEnglish
Pages (from-to)341-353
Number of pages13
JournalECS Transactions
Volume3
Issue number7
DOIs
Publication statusPublished - 2006
EventSiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, Mexico
Duration: 2006 Oct 292006 Nov 3

ASJC Scopus subject areas

  • Engineering(all)

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    Khater, M., Adam, T., Rieh, J. S., Schonenberg, K., Pagette, F., Stein, K., Jeng, S. J., Ahlgren, D., & Freeman, G. (2006). Pushing the performance limits of SiGe HBT technology. ECS Transactions, 3(7), 341-353. https://doi.org/10.1149/1.2355832