Quantitative analysis of the angle dependence of planar Hall effect observed in ferromagnetic GaMnAs film

Jungtaek Kim, Taehee Yoo, Sunjae Chung, Sang Hoon Lee, X. Liu, J. K. Furdyna

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23 Citations (Scopus)

Abstract

The angle dependence of the planar Hall effect has been analyzed based on the magnetic free energy including the magnetic anisotropy and the Zeeman effects. The Zeeman effect dominated the magnetic anisotropy in high field and only a single energy minimum is shown in free energy over entire field angle, which leads to the coherent rotation of the magnetization in the form of a single domain state. When the field strength is reduced below 300 Oe, multiple energy minima appear in the angle dependence of free energy due to the increase in the relative importance of magnetic anisotropy. In the low field region, reorientation of magnetization experiences abrupt transition between the free energy minima. The pinning fields obtained from the analysis showed systematic dependence on the strength of external field, which was used to rotate magnetization. We understood such pinning energy dependence in terms of the difference in the free energy density profile for the different field strengths.

Original languageEnglish
Article number07C501
JournalJournal of Applied Physics
Volume105
Issue number7
DOIs
Publication statusPublished - 2009 Apr 27

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ferromagnetic films
quantitative analysis
Hall effect
free energy
Zeeman effect
magnetization
anisotropy
field strength
retraining
energy
flux density
profiles

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Quantitative analysis of the angle dependence of planar Hall effect observed in ferromagnetic GaMnAs film. / Kim, Jungtaek; Yoo, Taehee; Chung, Sunjae; Lee, Sang Hoon; Liu, X.; Furdyna, J. K.

In: Journal of Applied Physics, Vol. 105, No. 7, 07C501, 27.04.2009.

Research output: Contribution to journalArticle

Kim, Jungtaek ; Yoo, Taehee ; Chung, Sunjae ; Lee, Sang Hoon ; Liu, X. ; Furdyna, J. K. / Quantitative analysis of the angle dependence of planar Hall effect observed in ferromagnetic GaMnAs film. In: Journal of Applied Physics. 2009 ; Vol. 105, No. 7.
@article{b9ae700e0c3b48628ac8b5bee4bbbe9e,
title = "Quantitative analysis of the angle dependence of planar Hall effect observed in ferromagnetic GaMnAs film",
abstract = "The angle dependence of the planar Hall effect has been analyzed based on the magnetic free energy including the magnetic anisotropy and the Zeeman effects. The Zeeman effect dominated the magnetic anisotropy in high field and only a single energy minimum is shown in free energy over entire field angle, which leads to the coherent rotation of the magnetization in the form of a single domain state. When the field strength is reduced below 300 Oe, multiple energy minima appear in the angle dependence of free energy due to the increase in the relative importance of magnetic anisotropy. In the low field region, reorientation of magnetization experiences abrupt transition between the free energy minima. The pinning fields obtained from the analysis showed systematic dependence on the strength of external field, which was used to rotate magnetization. We understood such pinning energy dependence in terms of the difference in the free energy density profile for the different field strengths.",
author = "Jungtaek Kim and Taehee Yoo and Sunjae Chung and Lee, {Sang Hoon} and X. Liu and Furdyna, {J. K.}",
year = "2009",
month = "4",
day = "27",
doi = "10.1063/1.3055354",
language = "English",
volume = "105",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - Quantitative analysis of the angle dependence of planar Hall effect observed in ferromagnetic GaMnAs film

AU - Kim, Jungtaek

AU - Yoo, Taehee

AU - Chung, Sunjae

AU - Lee, Sang Hoon

AU - Liu, X.

AU - Furdyna, J. K.

PY - 2009/4/27

Y1 - 2009/4/27

N2 - The angle dependence of the planar Hall effect has been analyzed based on the magnetic free energy including the magnetic anisotropy and the Zeeman effects. The Zeeman effect dominated the magnetic anisotropy in high field and only a single energy minimum is shown in free energy over entire field angle, which leads to the coherent rotation of the magnetization in the form of a single domain state. When the field strength is reduced below 300 Oe, multiple energy minima appear in the angle dependence of free energy due to the increase in the relative importance of magnetic anisotropy. In the low field region, reorientation of magnetization experiences abrupt transition between the free energy minima. The pinning fields obtained from the analysis showed systematic dependence on the strength of external field, which was used to rotate magnetization. We understood such pinning energy dependence in terms of the difference in the free energy density profile for the different field strengths.

AB - The angle dependence of the planar Hall effect has been analyzed based on the magnetic free energy including the magnetic anisotropy and the Zeeman effects. The Zeeman effect dominated the magnetic anisotropy in high field and only a single energy minimum is shown in free energy over entire field angle, which leads to the coherent rotation of the magnetization in the form of a single domain state. When the field strength is reduced below 300 Oe, multiple energy minima appear in the angle dependence of free energy due to the increase in the relative importance of magnetic anisotropy. In the low field region, reorientation of magnetization experiences abrupt transition between the free energy minima. The pinning fields obtained from the analysis showed systematic dependence on the strength of external field, which was used to rotate magnetization. We understood such pinning energy dependence in terms of the difference in the free energy density profile for the different field strengths.

UR - http://www.scopus.com/inward/record.url?scp=65249190424&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=65249190424&partnerID=8YFLogxK

U2 - 10.1063/1.3055354

DO - 10.1063/1.3055354

M3 - Article

VL - 105

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 7

M1 - 07C501

ER -