Quantitative extraction of temperature-dependent barrier height and channel resistance of a-SIZO/OMO and a-SIZO/IZO thin-film transistors

K. Heo, B. H. Hong, E. H. Lee, S. Y. Lee, Sangsig Kim, S. W. Hwang

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Temperature $(T)$-dependent electrical characteristics of thin-film transistors fabricated using oxide-metal-oxide (OMO) and indium-zinc-oxide (IZO) as electrodes and amorphous silicon-doped IZO (a-SIZO) as channel material were studied. The measured data were fit, using a Schottky diode/resistor/Schottky-diode-equivalent circuit model, to obtain the barrier height and the channel resistance. The barrier height coefficients α of the IZO and OMO electrode devices were found to be 1.59 and 1.61 meV/K, respectively. The T-dependent resistivity of the a-SIZO channel material was consistent with the variable range hopping conduction mechanism.

Original languageEnglish
Article number6403498
Pages (from-to)247-249
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number2
DOIs
Publication statusPublished - 2013 Jan 10

Fingerprint

Zinc Oxide
Indium
Thin film transistors
Zinc oxide
Amorphous silicon
Oxides
Oxide films
Metals
Diodes
Electrodes
Equivalent circuits
Resistors
Temperature

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Quantitative extraction of temperature-dependent barrier height and channel resistance of a-SIZO/OMO and a-SIZO/IZO thin-film transistors. / Heo, K.; Hong, B. H.; Lee, E. H.; Lee, S. Y.; Kim, Sangsig; Hwang, S. W.

In: IEEE Electron Device Letters, Vol. 34, No. 2, 6403498, 10.01.2013, p. 247-249.

Research output: Contribution to journalArticle

@article{e919dacbf69042efb3b379d210681deb,
title = "Quantitative extraction of temperature-dependent barrier height and channel resistance of a-SIZO/OMO and a-SIZO/IZO thin-film transistors",
abstract = "Temperature $(T)$-dependent electrical characteristics of thin-film transistors fabricated using oxide-metal-oxide (OMO) and indium-zinc-oxide (IZO) as electrodes and amorphous silicon-doped IZO (a-SIZO) as channel material were studied. The measured data were fit, using a Schottky diode/resistor/Schottky-diode-equivalent circuit model, to obtain the barrier height and the channel resistance. The barrier height coefficients α of the IZO and OMO electrode devices were found to be 1.59 and 1.61 meV/K, respectively. The T-dependent resistivity of the a-SIZO channel material was consistent with the variable range hopping conduction mechanism.",
keywords = "Amorphous silicon-doped indium-zinc-oxide (a-SIZO), barrier height, indium-zinc-oxide (IZO), oxide-metal-oxide (OMO), variable range hopping",
author = "K. Heo and Hong, {B. H.} and Lee, {E. H.} and Lee, {S. Y.} and Sangsig Kim and Hwang, {S. W.}",
year = "2013",
month = "1",
day = "10",
doi = "10.1109/LED.2012.2226202",
language = "English",
volume = "34",
pages = "247--249",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",

}

TY - JOUR

T1 - Quantitative extraction of temperature-dependent barrier height and channel resistance of a-SIZO/OMO and a-SIZO/IZO thin-film transistors

AU - Heo, K.

AU - Hong, B. H.

AU - Lee, E. H.

AU - Lee, S. Y.

AU - Kim, Sangsig

AU - Hwang, S. W.

PY - 2013/1/10

Y1 - 2013/1/10

N2 - Temperature $(T)$-dependent electrical characteristics of thin-film transistors fabricated using oxide-metal-oxide (OMO) and indium-zinc-oxide (IZO) as electrodes and amorphous silicon-doped IZO (a-SIZO) as channel material were studied. The measured data were fit, using a Schottky diode/resistor/Schottky-diode-equivalent circuit model, to obtain the barrier height and the channel resistance. The barrier height coefficients α of the IZO and OMO electrode devices were found to be 1.59 and 1.61 meV/K, respectively. The T-dependent resistivity of the a-SIZO channel material was consistent with the variable range hopping conduction mechanism.

AB - Temperature $(T)$-dependent electrical characteristics of thin-film transistors fabricated using oxide-metal-oxide (OMO) and indium-zinc-oxide (IZO) as electrodes and amorphous silicon-doped IZO (a-SIZO) as channel material were studied. The measured data were fit, using a Schottky diode/resistor/Schottky-diode-equivalent circuit model, to obtain the barrier height and the channel resistance. The barrier height coefficients α of the IZO and OMO electrode devices were found to be 1.59 and 1.61 meV/K, respectively. The T-dependent resistivity of the a-SIZO channel material was consistent with the variable range hopping conduction mechanism.

KW - Amorphous silicon-doped indium-zinc-oxide (a-SIZO)

KW - barrier height

KW - indium-zinc-oxide (IZO)

KW - oxide-metal-oxide (OMO)

KW - variable range hopping

UR - http://www.scopus.com/inward/record.url?scp=84873058744&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84873058744&partnerID=8YFLogxK

U2 - 10.1109/LED.2012.2226202

DO - 10.1109/LED.2012.2226202

M3 - Article

VL - 34

SP - 247

EP - 249

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 2

M1 - 6403498

ER -