Quantitative extraction of temperature-dependent barrier height and channel resistance of a-SIZO/OMO and a-SIZO/IZO thin-film transistors

K. Heo, B. H. Hong, E. H. Lee, S. Y. Lee, S. Kim, S. W. Hwang

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Temperature $(T)$-dependent electrical characteristics of thin-film transistors fabricated using oxide-metal-oxide (OMO) and indium-zinc-oxide (IZO) as electrodes and amorphous silicon-doped IZO (a-SIZO) as channel material were studied. The measured data were fit, using a Schottky diode/resistor/Schottky-diode-equivalent circuit model, to obtain the barrier height and the channel resistance. The barrier height coefficients α of the IZO and OMO electrode devices were found to be 1.59 and 1.61 meV/K, respectively. The T-dependent resistivity of the a-SIZO channel material was consistent with the variable range hopping conduction mechanism.

Original languageEnglish
Article number6403498
Pages (from-to)247-249
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number2
DOIs
Publication statusPublished - 2013

Keywords

  • Amorphous silicon-doped indium-zinc-oxide (a-SIZO)
  • barrier height
  • indium-zinc-oxide (IZO)
  • oxide-metal-oxide (OMO)
  • variable range hopping

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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