Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films

Tae Youb Kim, Nae M. Park, Kyung Hyun Kim, Young W. Ok, Tae Yeon Seong, Cheol Jong Choi, Gun Yong Sung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Silicon nanocrystals were in situ grown in a silicon nitride film by plasma enhanced chemical vapor deposition. The size and structure of silicon nanocrystals were confirmed by high-resolution transmission electron microscopy. Depending on the size, the photoluminescence of silicon nanocrystals can be tuned from the near infrared (1.38 eV) to the ultraviolet (3.02 eV). The fitted photoluminescence peak energy as E(eV) = 1.16 + 11.8/d 2 is an evidence for the quantum confinement effect in silicon nanocrystals. The results demonstrate that the band gap of silicon nanocrystals embedded in silicon nitride matrix was more effectively controlled for a wide range of luminescent wavelengths.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsJ.H. Shin, M. Brongersma, C. Buchal, F. Priolo
Pages121-126
Number of pages6
Volume817
Publication statusPublished - 2004
Externally publishedYes
EventNew Materials for Microphotonics - San Francisco, CA, United States
Duration: 2004 Apr 132004 Apr 15

Other

OtherNew Materials for Microphotonics
CountryUnited States
CitySan Francisco, CA
Period04/4/1304/4/15

Fingerprint

Quantum confinement
Silicon
Silicon nitride
Nanocrystals
Photoluminescence
Plasma enhanced chemical vapor deposition
High resolution transmission electron microscopy
Energy gap
silicon nitride
Infrared radiation
Wavelength

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Kim, T. Y., Park, N. M., Kim, K. H., Ok, Y. W., Seong, T. Y., Choi, C. J., & Sung, G. Y. (2004). Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films. In J. H. Shin, M. Brongersma, C. Buchal, & F. Priolo (Eds.), Materials Research Society Symposium - Proceedings (Vol. 817, pp. 121-126)

Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films. / Kim, Tae Youb; Park, Nae M.; Kim, Kyung Hyun; Ok, Young W.; Seong, Tae Yeon; Choi, Cheol Jong; Sung, Gun Yong.

Materials Research Society Symposium - Proceedings. ed. / J.H. Shin; M. Brongersma; C. Buchal; F. Priolo. Vol. 817 2004. p. 121-126.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kim, TY, Park, NM, Kim, KH, Ok, YW, Seong, TY, Choi, CJ & Sung, GY 2004, Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films. in JH Shin, M Brongersma, C Buchal & F Priolo (eds), Materials Research Society Symposium - Proceedings. vol. 817, pp. 121-126, New Materials for Microphotonics, San Francisco, CA, United States, 04/4/13.
Kim TY, Park NM, Kim KH, Ok YW, Seong TY, Choi CJ et al. Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films. In Shin JH, Brongersma M, Buchal C, Priolo F, editors, Materials Research Society Symposium - Proceedings. Vol. 817. 2004. p. 121-126
Kim, Tae Youb ; Park, Nae M. ; Kim, Kyung Hyun ; Ok, Young W. ; Seong, Tae Yeon ; Choi, Cheol Jong ; Sung, Gun Yong. / Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films. Materials Research Society Symposium - Proceedings. editor / J.H. Shin ; M. Brongersma ; C. Buchal ; F. Priolo. Vol. 817 2004. pp. 121-126
@inproceedings{0d94e8413a984f929af3b181692e5fa3,
title = "Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films",
abstract = "Silicon nanocrystals were in situ grown in a silicon nitride film by plasma enhanced chemical vapor deposition. The size and structure of silicon nanocrystals were confirmed by high-resolution transmission electron microscopy. Depending on the size, the photoluminescence of silicon nanocrystals can be tuned from the near infrared (1.38 eV) to the ultraviolet (3.02 eV). The fitted photoluminescence peak energy as E(eV) = 1.16 + 11.8/d 2 is an evidence for the quantum confinement effect in silicon nanocrystals. The results demonstrate that the band gap of silicon nanocrystals embedded in silicon nitride matrix was more effectively controlled for a wide range of luminescent wavelengths.",
author = "Kim, {Tae Youb} and Park, {Nae M.} and Kim, {Kyung Hyun} and Ok, {Young W.} and Seong, {Tae Yeon} and Choi, {Cheol Jong} and Sung, {Gun Yong}",
year = "2004",
language = "English",
volume = "817",
pages = "121--126",
editor = "J.H. Shin and M. Brongersma and C. Buchal and F. Priolo",
booktitle = "Materials Research Society Symposium - Proceedings",

}

TY - GEN

T1 - Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films

AU - Kim, Tae Youb

AU - Park, Nae M.

AU - Kim, Kyung Hyun

AU - Ok, Young W.

AU - Seong, Tae Yeon

AU - Choi, Cheol Jong

AU - Sung, Gun Yong

PY - 2004

Y1 - 2004

N2 - Silicon nanocrystals were in situ grown in a silicon nitride film by plasma enhanced chemical vapor deposition. The size and structure of silicon nanocrystals were confirmed by high-resolution transmission electron microscopy. Depending on the size, the photoluminescence of silicon nanocrystals can be tuned from the near infrared (1.38 eV) to the ultraviolet (3.02 eV). The fitted photoluminescence peak energy as E(eV) = 1.16 + 11.8/d 2 is an evidence for the quantum confinement effect in silicon nanocrystals. The results demonstrate that the band gap of silicon nanocrystals embedded in silicon nitride matrix was more effectively controlled for a wide range of luminescent wavelengths.

AB - Silicon nanocrystals were in situ grown in a silicon nitride film by plasma enhanced chemical vapor deposition. The size and structure of silicon nanocrystals were confirmed by high-resolution transmission electron microscopy. Depending on the size, the photoluminescence of silicon nanocrystals can be tuned from the near infrared (1.38 eV) to the ultraviolet (3.02 eV). The fitted photoluminescence peak energy as E(eV) = 1.16 + 11.8/d 2 is an evidence for the quantum confinement effect in silicon nanocrystals. The results demonstrate that the band gap of silicon nanocrystals embedded in silicon nitride matrix was more effectively controlled for a wide range of luminescent wavelengths.

UR - http://www.scopus.com/inward/record.url?scp=5544297891&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=5544297891&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:5544297891

VL - 817

SP - 121

EP - 126

BT - Materials Research Society Symposium - Proceedings

A2 - Shin, J.H.

A2 - Brongersma, M.

A2 - Buchal, C.

A2 - Priolo, F.

ER -