Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films

Tae Youb Kim, Nae Man Park, Kyung Hyun Kim, Gun Yong Sung, Young Woo Ok, Tae Yeon Seong, Cheol Jong Choi

Research output: Contribution to journalArticle

285 Citations (Scopus)

Abstract

Silicon nanocrystals were in situ grown in a silicon nitride film by plasma-enhanced chemical vapor deposition. The size and structure of silicon nanocrystals were confirmed by high-resolution transmission electron microscopy. Depending on the size, the photoluminescence of silicon nanocrystals can be tuned from the near infrared (1.38 eV) to the ultraviolet (3.02 eV). The fitted photoluminescence peak energy as E(eV)=1.16+11.8/d2 is evidence for the quantum confinement effect in silicon nanocrystals. The results demonstrate that the band gap of silicon nanocrystals embedded in silicon nitride matrix was more effectively controlled for a wide range of luminescent wavelengths.

Original languageEnglish
Article number3
Pages (from-to)5355-5357
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number22
DOIs
Publication statusPublished - 2004 Nov 29
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Kim, T. Y., Park, N. M., Kim, K. H., Sung, G. Y., Ok, Y. W., Seong, T. Y., & Choi, C. J. (2004). Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films. Applied Physics Letters, 85(22), 5355-5357. [3]. https://doi.org/10.1063/1.1814429