Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride

Nae Man Park; Chel Jong Choi; Tae Yeon Seong; Seong Ju Park

doi:10.1103/PhysRevLett.86.1355

Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride

Nae Man Park, Chel Jong Choi, Tae Yeon Seong, Seong Ju Park

Research output: Contribution to journal › Article › peer-review

533 Citations (Scopus)

Abstract

Well-organized and well-surface passivated a-Si quantum dots (QDs) were grown in a silicon nitride film by plasma enhanced chemical vapor deposition. The photoluminescence and optical absorption measurements showed convincing evidence of the quantum confinement effect in a-Si QDs.

Original language	English
Pages (from-to)	1355-1357
Number of pages	3
Journal	Physical review letters
Volume	86
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevLett.86.1355
Publication status	Published - 2001 Feb 12
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1103/PhysRevLett.86.1355

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title = "Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride",

abstract = "Well-organized and well-surface passivated a-Si quantum dots (QDs) were grown in a silicon nitride film by plasma enhanced chemical vapor deposition. The photoluminescence and optical absorption measurements showed convincing evidence of the quantum confinement effect in a-Si QDs.",

author = "Park, {Nae Man} and Choi, {Chel Jong} and Seong, {Tae Yeon} and Park, {Seong Ju}",

year = "2001",

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doi = "10.1103/PhysRevLett.86.1355",

language = "English",

volume = "86",

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AU - Park, Nae Man

AU - Choi, Chel Jong

AU - Seong, Tae Yeon

AU - Park, Seong Ju

PY - 2001/2/12

Y1 - 2001/2/12

N2 - Well-organized and well-surface passivated a-Si quantum dots (QDs) were grown in a silicon nitride film by plasma enhanced chemical vapor deposition. The photoluminescence and optical absorption measurements showed convincing evidence of the quantum confinement effect in a-Si QDs.

AB - Well-organized and well-surface passivated a-Si quantum dots (QDs) were grown in a silicon nitride film by plasma enhanced chemical vapor deposition. The photoluminescence and optical absorption measurements showed convincing evidence of the quantum confinement effect in a-Si QDs.

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U2 - 10.1103/PhysRevLett.86.1355

DO - 10.1103/PhysRevLett.86.1355

M3 - Article

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SN - 0031-9007

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SP - 1355

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JO - Physical Review Letters

JF - Physical Review Letters

IS - 7

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Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride

Abstract

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