Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride

Nae Man Park, Chel Jong Choi, Tae Yeon Seong, Seong Ju Park

Research output: Contribution to journalArticle

501 Citations (Scopus)

Abstract

Well-organized and well-surface passivated a-Si quantum dots (QDs) were grown in a silicon nitride film by plasma enhanced chemical vapor deposition. The photoluminescence and optical absorption measurements showed convincing evidence of the quantum confinement effect in a-Si QDs.

Original languageEnglish
Pages (from-to)1355-1357
Number of pages3
JournalPhysical Review Letters
Volume86
Issue number7
DOIs
Publication statusPublished - 2001 Feb 12
Externally publishedYes

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silicon nitrides
amorphous silicon
quantum dots
optical absorption
vapor deposition
photoluminescence

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride. / Park, Nae Man; Choi, Chel Jong; Seong, Tae Yeon; Park, Seong Ju.

In: Physical Review Letters, Vol. 86, No. 7, 12.02.2001, p. 1355-1357.

Research output: Contribution to journalArticle

Park, Nae Man ; Choi, Chel Jong ; Seong, Tae Yeon ; Park, Seong Ju. / Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride. In: Physical Review Letters. 2001 ; Vol. 86, No. 7. pp. 1355-1357.
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