We introduce a fabrication process to immobilize cadmium selenide (CdSe) Quantum Dots (QDs) on end-facets of metal nanowires, which can be possibly used as a cavity-free unidirectional single photon source with high coupling efficiency due to high Purcell factor. Nanowires were fabricated using E-beam lithography, E-beam evaporation, and lift-off process and finally covered with chemically deposited silicon dioxide (SiO2) layer. End-facets of metal nanowires were defined using wet etching process. QD immobilization was accomplished through surface modifications on both metal and QD surfaces. We immobilized thiol (-SH) functionalized 15 base pair (bp) ssDNA on Au nanowire surface to hybridize with its complimentary amine (-NH3) functionalized 15bp ssDNA and conjugated the amine functionalized 15bp ssDNA with QD. Presenting QD immobilization method showed high selectivity between metal nanowire and SiO2 surfaces.