Abstract
We have investigated the quantum well thickness dependence of spin-orbit coupling in InAs/InGaAs heterostructures. The beat patterns of the oscillatory magnetoresistance were measured to determine the magnitude of the parameter of an inverted type InAs quantum well structures with the thicknesses ranging from 2 to 7 nm. The band energies, electronic charge distribution, and Rashba spin-orbit coupling parameter of the structure were calculated using a self-consistent field method and a kP perturbation scheme. The magnitude of the parameter increases with decreasing the InAs quantum well thickness. Comparison with the calculated data revealed that the increase in the spin-orbit interaction parameter is due to the stronger penetration of the wave function envelope into the barriers where more pronounced band bending and barrier asymmetry occur in both the conduction and valence bands.
| Original language | English |
|---|---|
| Article number | 202504 |
| Journal | Applied Physics Letters |
| Volume | 98 |
| Issue number | 20 |
| DOIs | |
| Publication status | Published - 2011 May 16 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Quantum well thickness dependence of Rashba spin-orbit coupling in the InAs/InGaAs heterostructure. / Lee, Tae Young; Chang, Joonyeon; Hickey, Mark C.; Koo, Hyun Cheol; Kim, Hyung Jun; Han, Suk Hee; Moodera, Jagadeesh S.
In: Applied Physics Letters, Vol. 98, No. 20, 202504, 16.05.2011.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Quantum well thickness dependence of Rashba spin-orbit coupling in the InAs/InGaAs heterostructure
AU - Lee, Tae Young
AU - Chang, Joonyeon
AU - Hickey, Mark C.
AU - Koo, Hyun Cheol
AU - Kim, Hyung Jun
AU - Han, Suk Hee
AU - Moodera, Jagadeesh S.
PY - 2011/5/16
Y1 - 2011/5/16
N2 - We have investigated the quantum well thickness dependence of spin-orbit coupling in InAs/InGaAs heterostructures. The beat patterns of the oscillatory magnetoresistance were measured to determine the magnitude of the parameter of an inverted type InAs quantum well structures with the thicknesses ranging from 2 to 7 nm. The band energies, electronic charge distribution, and Rashba spin-orbit coupling parameter of the structure were calculated using a self-consistent field method and a kP perturbation scheme. The magnitude of the parameter increases with decreasing the InAs quantum well thickness. Comparison with the calculated data revealed that the increase in the spin-orbit interaction parameter is due to the stronger penetration of the wave function envelope into the barriers where more pronounced band bending and barrier asymmetry occur in both the conduction and valence bands.
AB - We have investigated the quantum well thickness dependence of spin-orbit coupling in InAs/InGaAs heterostructures. The beat patterns of the oscillatory magnetoresistance were measured to determine the magnitude of the parameter of an inverted type InAs quantum well structures with the thicknesses ranging from 2 to 7 nm. The band energies, electronic charge distribution, and Rashba spin-orbit coupling parameter of the structure were calculated using a self-consistent field method and a kP perturbation scheme. The magnitude of the parameter increases with decreasing the InAs quantum well thickness. Comparison with the calculated data revealed that the increase in the spin-orbit interaction parameter is due to the stronger penetration of the wave function envelope into the barriers where more pronounced band bending and barrier asymmetry occur in both the conduction and valence bands.
UR - http://www.scopus.com/inward/record.url?scp=79957571322&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79957571322&partnerID=8YFLogxK
U2 - 10.1063/1.3589812
DO - 10.1063/1.3589812
M3 - Article
VL - 98
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 20
M1 - 202504
ER -