Quantum well thickness dependence of Rashba spin-orbit coupling in the InAs/InGaAs heterostructure

Tae Young Lee, Joonyeon Chang, Mark C. Hickey, Hyun Cheol Koo, Hyung Jun Kim, Suk Hee Han, Jagadeesh S. Moodera

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We have investigated the quantum well thickness dependence of spin-orbit coupling in InAs/InGaAs heterostructures. The beat patterns of the oscillatory magnetoresistance were measured to determine the magnitude of the parameter of an inverted type InAs quantum well structures with the thicknesses ranging from 2 to 7 nm. The band energies, electronic charge distribution, and Rashba spin-orbit coupling parameter of the structure were calculated using a self-consistent field method and a kP perturbation scheme. The magnitude of the parameter increases with decreasing the InAs quantum well thickness. Comparison with the calculated data revealed that the increase in the spin-orbit interaction parameter is due to the stronger penetration of the wave function envelope into the barriers where more pronounced band bending and barrier asymmetry occur in both the conduction and valence bands.

Original languageEnglish
Article number202504
JournalApplied Physics Letters
Volume98
Issue number20
DOIs
Publication statusPublished - 2011 May 16
Externally publishedYes

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quantum wells
orbits
spin-orbit interactions
charge distribution
energy bands
self consistent fields
synchronism
conduction bands
envelopes
penetration
asymmetry
wave functions
valence
perturbation
electronics

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Lee, T. Y., Chang, J., Hickey, M. C., Koo, H. C., Kim, H. J., Han, S. H., & Moodera, J. S. (2011). Quantum well thickness dependence of Rashba spin-orbit coupling in the InAs/InGaAs heterostructure. Applied Physics Letters, 98(20), [202504]. https://doi.org/10.1063/1.3589812

Quantum well thickness dependence of Rashba spin-orbit coupling in the InAs/InGaAs heterostructure. / Lee, Tae Young; Chang, Joonyeon; Hickey, Mark C.; Koo, Hyun Cheol; Kim, Hyung Jun; Han, Suk Hee; Moodera, Jagadeesh S.

In: Applied Physics Letters, Vol. 98, No. 20, 202504, 16.05.2011.

Research output: Contribution to journalArticle

Lee, TY, Chang, J, Hickey, MC, Koo, HC, Kim, HJ, Han, SH & Moodera, JS 2011, 'Quantum well thickness dependence of Rashba spin-orbit coupling in the InAs/InGaAs heterostructure', Applied Physics Letters, vol. 98, no. 20, 202504. https://doi.org/10.1063/1.3589812
Lee, Tae Young ; Chang, Joonyeon ; Hickey, Mark C. ; Koo, Hyun Cheol ; Kim, Hyung Jun ; Han, Suk Hee ; Moodera, Jagadeesh S. / Quantum well thickness dependence of Rashba spin-orbit coupling in the InAs/InGaAs heterostructure. In: Applied Physics Letters. 2011 ; Vol. 98, No. 20.
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