Quantum wells due to ordering in GaInP

Y. Hsu, G. B. Stringfellow, C. E. Inglefield, M. C. DeLong, P. C. Taylor, J. H. Cho, T. Y. Seong

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Abstract

CuPt ordering results in a reduction of the band-gap energy of GaInP. Thus, heterostructures and quantum wells can be produced by simply varying the order parameter, without changing the solid composition. Changes in the order parameter can be induced by changes in growth conditions. The disordered/ordered/disordered quantum wells described here are grown by changing the PH3 flow rate. Transmission electron microscopy results show that the quantum wells produced in this way are clearly defined, with abrupt interfaces. Low-temperature photoluminescence spectra show distinct peaks from quantum wells (QWs) of different widths. The QW photoluminescence peak energy increases with decreasing well width due to quantum size effects. The difference in band-gap energy between the ordered and disordered single layers is determined from photoluminescence excitation spectroscopy to be 0.06 eV.

Original languageEnglish
Pages (from-to)3905-3907
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number26
DOIs
Publication statusPublished - 1998

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Hsu, Y., Stringfellow, G. B., Inglefield, C. E., DeLong, M. C., Taylor, P. C., Cho, J. H., & Seong, T. Y. (1998). Quantum wells due to ordering in GaInP. Applied Physics Letters, 73(26), 3905-3907. https://doi.org/10.1063/1.122931