An AlGaN/GaN nanowire, with an isosceles-triangle cross-section, was designed to create a large negative polarization at the (000-1) facet. The resultant band bending at this interface formed a two-dimensional potential well that accumulated a hole gas. Transistor operation based on the two-dimensional hole gas showed characteristics of quasi-ballistic transport. A small number of elastic scattering sites were evident from quantum interference characteristics in the current-voltage data.
|Title of host publication||Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52|
|Publisher||Electrochemical Society Inc.|
|Number of pages||6|
|Publication status||Published - 2010|
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