Quasi-ballistic hole transport in an AlGaN/GaN nanowire

M. A. Mastro, H. Y. Kim, J. Ahn, Ji Hyun Kim, J. Hite, C. R. Eddy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

An AlGaN/GaN nanowire, with an isosceles-triangle cross-section, was designed to create a large negative polarization at the (000-1) facet. The resultant band bending at this interface formed a two-dimensional potential well that accumulated a hole gas. Transistor operation based on the two-dimensional hole gas showed characteristics of quasi-ballistic transport. A small number of elastic scattering sites were evident from quantum interference characteristics in the current-voltage data.

Original languageEnglish
Title of host publicationECS Transactions
Pages47-52
Number of pages6
Volume28
Edition4
DOIs
Publication statusPublished - 2010 Dec 29
EventWide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 217th ECS Meeting - Vancouver, BC, Canada
Duration: 2010 Apr 252010 Apr 30

Other

OtherWide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52 - 217th ECS Meeting
CountryCanada
CityVancouver, BC
Period10/4/2510/4/30

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Mastro, M. A., Kim, H. Y., Ahn, J., Kim, J. H., Hite, J., & Eddy, C. R. (2010). Quasi-ballistic hole transport in an AlGaN/GaN nanowire. In ECS Transactions (4 ed., Vol. 28, pp. 47-52) https://doi.org/10.1149/13377098