Quasi-ballistic hole transport in an AlGaN/GaN nanowire

M. A. Mastro, H. Y. Kim, J. Ahn, J. Kim, J. Hite, C. R. Eddy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)


An AlGaN/GaN nanowire, with an isosceles-triangle cross-section, was designed to create a large negative polarization at the (000-1) facet. The resultant band bending at this interface formed a two-dimensional potential well that accumulated a hole gas. Transistor operation based on the two-dimensional hole gas showed characteristics of quasi-ballistic transport. A small number of elastic scattering sites were evident from quantum interference characteristics in the current-voltage data.

Original languageEnglish
Title of host publicationWide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52
PublisherElectrochemical Society Inc.
Number of pages6
ISBN (Electronic)9781607681441
ISBN (Print)9781566777940
Publication statusPublished - 2010

Publication series

NameECS Transactions
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

ASJC Scopus subject areas

  • Engineering(all)


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