@inproceedings{4a31aa3aef0c4a3aa207f1d22974c36a,
title = "Quasi-ballistic hole transport in an AlGaN/GaN nanowire",
abstract = "An AlGaN/GaN nanowire, with an isosceles-triangle cross-section, was designed to create a large negative polarization at the (000-1) facet. The resultant band bending at this interface formed a two-dimensional potential well that accumulated a hole gas. Transistor operation based on the two-dimensional hole gas showed characteristics of quasi-ballistic transport. A small number of elastic scattering sites were evident from quantum interference characteristics in the current-voltage data.",
author = "Mastro, {M. A.} and Kim, {H. Y.} and J. Ahn and J. Kim and J. Hite and Eddy, {C. R.}",
year = "2010",
doi = "10.1149/13377098",
language = "English",
isbn = "9781566777940",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "4",
pages = "47--52",
booktitle = "Wide-Bandgap Semiconductor Materials and Devices 11 -and- State-of-the-Art Program on Compound Semiconductors 52, SOTAPOCS 52",
edition = "4",
}