Quasi-Nonvolatile Silicon Memory Device

Doohyeok Lim, Jaemin Son, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

Abstract

Memory hierarchy among conventional memory technologies is one of the main bottlenecks in modern computer systems; alternative memory technologies are thus necessary for quasi-nonvolatile memory applications. Herein, a fully complementary metal-oxide-semiconductor-compatible quasi-nonvolatile memory composed of p+-n-p-n+ silicon on a silicon-on-insulator substrate is presented. The quasi-nonvolatile silicon memory device demonstrates high-speed write capability (≤100 ns), long retention time (100 s), and nondestructive read capability (1000 s), with high sensing current margin (≈109) and reliable endurance (≥109) at low voltages (≤1 V). Disturb immunity for memory array operations is also observed. This study demonstrates that the proposed quasi-nonvolatile silicon memory device is a promising candidate that can revolutionize the entire memory hierarchy.

Original languageEnglish
Article number2000915
JournalAdvanced Materials Technologies
Volume5
Issue number12
DOIs
Publication statusPublished - 2020 Dec

Keywords

  • field-effect transistors
  • memory hierarchy
  • positive feedback loop
  • quasi-nonvolatile memory

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Industrial and Manufacturing Engineering

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