Quasi-two-dimensional β-gallium oxide solar-blind photodetectors with ultrahigh responsivity

Ji Hyun Kim, Sooyeoun Oh, Janghyuk Kim, Fan Ren, Stephen J. Pearton

Research output: Contribution to journalArticle

54 Citations (Scopus)

Abstract

Solar-blind photodetectors have received a great deal of interest owing to their high selectivity for deep ultra-violet light in the presence of visible light. The development of alternative materials and innovative device designs are necessary for such solar-blind photodetectors, as the currently available commercial devices have issues pertaining to chemical and thermal instability, cost, and material handling due to their rigidity. Here, we fabricated solar-blind photodetectors based on exfoliated quasi-two-dimensional β-Ga2O3 flakes with optimal opto-electrical properties (direct bandgap of ∼4.9 eV), chemical and thermal stability, and then systematically characterized their photoresponsive properties. The fabricated device structures were based on back-gated field-effect transistors, allowing us to control the dark currents. These photodetectors exhibit extraordinary photoresponsive properties including the highest responsivity (1.8 × 105 A W-1) among reported semiconductor thin-film solar-blind photodetectors.

Original languageEnglish
Pages (from-to)9245-9250
Number of pages6
JournalJournal of Materials Chemistry C
Volume4
Issue number39
DOIs
Publication statusPublished - 2016

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry

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