TY - JOUR
T1 - Quasi-two-dimensional β-gallium oxide solar-blind photodetectors with ultrahigh responsivity
AU - Kim, Ji Hyun
AU - Oh, Sooyeoun
AU - Kim, Janghyuk
AU - Ren, Fan
AU - Pearton, Stephen J.
PY - 2016
Y1 - 2016
N2 - Solar-blind photodetectors have received a great deal of interest owing to their high selectivity for deep ultra-violet light in the presence of visible light. The development of alternative materials and innovative device designs are necessary for such solar-blind photodetectors, as the currently available commercial devices have issues pertaining to chemical and thermal instability, cost, and material handling due to their rigidity. Here, we fabricated solar-blind photodetectors based on exfoliated quasi-two-dimensional β-Ga2O3 flakes with optimal opto-electrical properties (direct bandgap of ∼4.9 eV), chemical and thermal stability, and then systematically characterized their photoresponsive properties. The fabricated device structures were based on back-gated field-effect transistors, allowing us to control the dark currents. These photodetectors exhibit extraordinary photoresponsive properties including the highest responsivity (1.8 × 105 A W-1) among reported semiconductor thin-film solar-blind photodetectors.
AB - Solar-blind photodetectors have received a great deal of interest owing to their high selectivity for deep ultra-violet light in the presence of visible light. The development of alternative materials and innovative device designs are necessary for such solar-blind photodetectors, as the currently available commercial devices have issues pertaining to chemical and thermal instability, cost, and material handling due to their rigidity. Here, we fabricated solar-blind photodetectors based on exfoliated quasi-two-dimensional β-Ga2O3 flakes with optimal opto-electrical properties (direct bandgap of ∼4.9 eV), chemical and thermal stability, and then systematically characterized their photoresponsive properties. The fabricated device structures were based on back-gated field-effect transistors, allowing us to control the dark currents. These photodetectors exhibit extraordinary photoresponsive properties including the highest responsivity (1.8 × 105 A W-1) among reported semiconductor thin-film solar-blind photodetectors.
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U2 - 10.1039/c6tc02467j
DO - 10.1039/c6tc02467j
M3 - Article
AN - SCOPUS:84991409656
VL - 4
SP - 9245
EP - 9250
JO - Journal of Materials Chemistry C
JF - Journal of Materials Chemistry C
SN - 2050-7526
IS - 39
ER -