TY - JOUR
T1 - Quasi-Two-Dimensional h-BN/β-Ga2O3 Heterostructure Metal-Insulator-Semiconductor Field-Effect Transistor
AU - Kim, Janghyuk
AU - Mastro, Michael A.
AU - Tadjer, Marko J.
AU - Kim, Jihyun
N1 - Funding Information:
The research at Korea University was supported by the National Research Foundation of Korea (2016M3D1A1952967), funded by the Ministry of Science, ICT, and Future Planning of Korea, and the New & Renewable Energy Core Technology Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP), granted financial resources from the Ministry of Trade, Industry & Energy, Korea (No. 20163010012140)
Publisher Copyright:
© 2017 American Chemical Society.
PY - 2017/6/28
Y1 - 2017/6/28
N2 - β-gallium oxide (β-Ga2O3) and hexagonal boron nitride (h-BN) heterostructure-based quasi-two-dimensional metal-insulator-semiconductor field-effect transistors (MISFETs) were demonstrated by integrating mechanical exfoliation of (quasi)-two-dimensional materials with a dry transfer process, wherein nanothin flakes of β-Ga2O3 and h-BN were utilized as the channel and gate dielectric, respectively, of the MISFET. The h-BN dielectric, which has an extraordinarily flat and clean surface, provides a minimal density of charged impurities on the interface between β-Ga2O3 and h-BN, resulting in superior device performances (maximum transconductance, on/off ratio, subthreshold swing, and threshold voltage) compared to those of the conventional back-gated configurations. Also, double-gating of the fabricated device was demonstrated by biasing both top and bottom gates, achieving the modulation of the threshold voltage. This heterostructured wide-band-gap nanodevice shows a new route toward stable and high-power nanoelectronic devices.
AB - β-gallium oxide (β-Ga2O3) and hexagonal boron nitride (h-BN) heterostructure-based quasi-two-dimensional metal-insulator-semiconductor field-effect transistors (MISFETs) were demonstrated by integrating mechanical exfoliation of (quasi)-two-dimensional materials with a dry transfer process, wherein nanothin flakes of β-Ga2O3 and h-BN were utilized as the channel and gate dielectric, respectively, of the MISFET. The h-BN dielectric, which has an extraordinarily flat and clean surface, provides a minimal density of charged impurities on the interface between β-Ga2O3 and h-BN, resulting in superior device performances (maximum transconductance, on/off ratio, subthreshold swing, and threshold voltage) compared to those of the conventional back-gated configurations. Also, double-gating of the fabricated device was demonstrated by biasing both top and bottom gates, achieving the modulation of the threshold voltage. This heterostructured wide-band-gap nanodevice shows a new route toward stable and high-power nanoelectronic devices.
KW - field-effect transistor
KW - gallium oxide
KW - heterostructure
KW - two-dimensional material
KW - wide-band-gap semiconductor
UR - http://www.scopus.com/inward/record.url?scp=85021685489&partnerID=8YFLogxK
U2 - 10.1021/acsami.7b04374
DO - 10.1021/acsami.7b04374
M3 - Article
C2 - 28560867
AN - SCOPUS:85021685489
VL - 9
SP - 21322
EP - 21327
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 25
ER -