Abstract
β-gallium oxide (β-Ga2O3) and hexagonal boron nitride (h-BN) heterostructure-based quasi-two-dimensional metal-insulator-semiconductor field-effect transistors (MISFETs) were demonstrated by integrating mechanical exfoliation of (quasi)-two-dimensional materials with a dry transfer process, wherein nanothin flakes of β-Ga2O3 and h-BN were utilized as the channel and gate dielectric, respectively, of the MISFET. The h-BN dielectric, which has an extraordinarily flat and clean surface, provides a minimal density of charged impurities on the interface between β-Ga2O3 and h-BN, resulting in superior device performances (maximum transconductance, on/off ratio, subthreshold swing, and threshold voltage) compared to those of the conventional back-gated configurations. Also, double-gating of the fabricated device was demonstrated by biasing both top and bottom gates, achieving the modulation of the threshold voltage. This heterostructured wide-band-gap nanodevice shows a new route toward stable and high-power nanoelectronic devices.
| Original language | English |
|---|---|
| Pages (from-to) | 21322-21327 |
| Number of pages | 6 |
| Journal | ACS Applied Materials and Interfaces |
| Volume | 9 |
| Issue number | 25 |
| DOIs | |
| Publication status | Published - 2017 Jun 28 |
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Keywords
- field-effect transistor
- gallium oxide
- heterostructure
- two-dimensional material
- wide-band-gap semiconductor
ASJC Scopus subject areas
- Materials Science(all)
Cite this
Quasi-Two-Dimensional h-BN/β-Ga2O3 Heterostructure Metal-Insulator-Semiconductor Field-Effect Transistor. / Kim, Janghyuk; Mastro, Michael A.; Tadjer, Marko J.; Kim, Ji Hyun.
In: ACS Applied Materials and Interfaces, Vol. 9, No. 25, 28.06.2017, p. 21322-21327.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Quasi-Two-Dimensional h-BN/β-Ga2O3 Heterostructure Metal-Insulator-Semiconductor Field-Effect Transistor
AU - Kim, Janghyuk
AU - Mastro, Michael A.
AU - Tadjer, Marko J.
AU - Kim, Ji Hyun
PY - 2017/6/28
Y1 - 2017/6/28
N2 - β-gallium oxide (β-Ga2O3) and hexagonal boron nitride (h-BN) heterostructure-based quasi-two-dimensional metal-insulator-semiconductor field-effect transistors (MISFETs) were demonstrated by integrating mechanical exfoliation of (quasi)-two-dimensional materials with a dry transfer process, wherein nanothin flakes of β-Ga2O3 and h-BN were utilized as the channel and gate dielectric, respectively, of the MISFET. The h-BN dielectric, which has an extraordinarily flat and clean surface, provides a minimal density of charged impurities on the interface between β-Ga2O3 and h-BN, resulting in superior device performances (maximum transconductance, on/off ratio, subthreshold swing, and threshold voltage) compared to those of the conventional back-gated configurations. Also, double-gating of the fabricated device was demonstrated by biasing both top and bottom gates, achieving the modulation of the threshold voltage. This heterostructured wide-band-gap nanodevice shows a new route toward stable and high-power nanoelectronic devices.
AB - β-gallium oxide (β-Ga2O3) and hexagonal boron nitride (h-BN) heterostructure-based quasi-two-dimensional metal-insulator-semiconductor field-effect transistors (MISFETs) were demonstrated by integrating mechanical exfoliation of (quasi)-two-dimensional materials with a dry transfer process, wherein nanothin flakes of β-Ga2O3 and h-BN were utilized as the channel and gate dielectric, respectively, of the MISFET. The h-BN dielectric, which has an extraordinarily flat and clean surface, provides a minimal density of charged impurities on the interface between β-Ga2O3 and h-BN, resulting in superior device performances (maximum transconductance, on/off ratio, subthreshold swing, and threshold voltage) compared to those of the conventional back-gated configurations. Also, double-gating of the fabricated device was demonstrated by biasing both top and bottom gates, achieving the modulation of the threshold voltage. This heterostructured wide-band-gap nanodevice shows a new route toward stable and high-power nanoelectronic devices.
KW - field-effect transistor
KW - gallium oxide
KW - heterostructure
KW - two-dimensional material
KW - wide-band-gap semiconductor
UR - http://www.scopus.com/inward/record.url?scp=85021685489&partnerID=8YFLogxK
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U2 - 10.1021/acsami.7b04374
DO - 10.1021/acsami.7b04374
M3 - Article
VL - 9
SP - 21322
EP - 21327
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 25
ER -