Quintuple layer Bi 2 Se 3 thin films directly grown on insulating SiO 2 using molecular beam epitaxy

Jeong Heum Jeon, Misun Song, Howon Kim, Won Jun Jang, Ji Yong Park, Seokhyun Yoon, Se Jong Kahng

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


Topological insulator thin films on insulating SiO 2 can be used in gate tunable devices, and have been prepared using exfoliation methods, but rarely with direct-growth methods. Here, we present our study to directly grow quintuple layer Bi 2 Se 3 on insulating SiO 2 using molecular beam epitaxy. We investigated atomic structures, stoichiometry, vibration modes, and surface morphology of the grown films using X-ray diffraction, Raman spectroscopy, and scanning tunneling microscopy, confirming that the grown films were Bi 2 Se 3 quintuple layers. We then fabricated gate tunable devices using the films. Our study shows that Bi 2 Se 3 can be directly prepared on non-crystalline insulator SiO 2 .

Original languageEnglish
Pages (from-to)42-45
Number of pages4
JournalApplied Surface Science
Issue number1
Publication statusPublished - 2014


  • Bismuth selenide
  • Molecular beam epitaxy
  • Topological insulator

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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