Quintuple layer Bi2Se3 thin films directly grown on insulating SiO2 using molecular beam epitaxy

Jeong Heum Jeon, Misun Song, Howon Kim, Won Jun Jang, Ji Yong Park, Seokhyun Yoon, Se-Jong Kahng

Research output: Contribution to journalArticle

9 Citations (Scopus)


Topological insulator thin films on insulating SiO2 can be used in gate tunable devices, and have been prepared using exfoliation methods, but rarely with direct-growth methods. Here, we present our study to directly grow quintuple layer Bi2 Se3 on insulating SiO2 using molecular beam epitaxy. We investigated atomic structures, stoichiometry, vibration modes, and surface morphology of the grown films using X-ray diffraction, Raman spectroscopy, and scanning tunneling microscopy, confirming that the grown films were Bi2Se3 quintuple layers. We then fabricated gate tunable devices using the films. Our study shows that Bi2Se3 can be directly prepared on non-crystalline insulator SiO2.

Original languageEnglish
Pages (from-to)42-45
Number of pages4
JournalApplied Surface Science
Issue number1
Publication statusPublished - 2014


  • Bismuth selenide
  • Molecular beam epitaxy
  • Topological insulator

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Quintuple layer Bi<sub>2</sub>Se<sub>3</sub> thin films directly grown on insulating SiO<sub>2</sub> using molecular beam epitaxy'. Together they form a unique fingerprint.

  • Cite this