Radiation and process-induced damage in Ga2O3

S. J. Pearton, Jiancheng Yang, F. Ren, G. Yang, Ji Hyun Kim, M. Stavola, A. Kuramata

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Ga2O3 is gaining attention for high breakdown electronics. The β-polymorph is air-stable, has a wide bandgap (∼4.6 eV) and is available in both bulk and epitaxial form. Different types of power diodes and transistors fabricated on Ga2O3 have shown impressive performance. Etching processes for Ga2O3 are needed for patterning for mesa isolation, threshold adjustment in transistors, thinning of nano-belts and selective area contact formation. Electrical damage in the near-surface region was found through barrier height changes of Schottky diodes on the etched surface. The damage is created by energetic ion bombardment, but may also consist of changes to near-surface stoichiometry through loss of lattice elements or deposition of etch residues. Annealing at 450°C removes this damage. We also discuss recent results on damage introduction by proton and electron irradiation. In this case, the carrier removal rates are found to be similar to those reported for GaN under similar conditions of dose and energy of the radiation.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices XIII
EditorsHiroshi Fujioka, Hadis Morkoc, Jen-Inn Chyi
PublisherSPIE
Volume10532
ISBN (Electronic)9781510615496
DOIs
Publication statusPublished - 2018 Jan 1
EventGallium Nitride Materials and Devices XIII 2018 - San Francisco, United States
Duration: 2018 Jan 292018 Feb 1

Other

OtherGallium Nitride Materials and Devices XIII 2018
CountryUnited States
CitySan Francisco
Period18/1/2918/2/1

Fingerprint

Damage
Radiation
damage
radiation
Diode
Proton irradiation
transistors
Electron irradiation
Ion bombardment
Polymorphism
Stoichiometry
Dosimetry
proton irradiation
Etching
Thinning
Transistors
Diodes
mesas
Energy gap
Electronic equipment

Keywords

  • annealing
  • dry etch damage
  • electron damage
  • GaO
  • proton damage
  • radiation damage
  • Schottky barriers

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Pearton, S. J., Yang, J., Ren, F., Yang, G., Kim, J. H., Stavola, M., & Kuramata, A. (2018). Radiation and process-induced damage in Ga2O3 In H. Fujioka, H. Morkoc, & J-I. Chyi (Eds.), Gallium Nitride Materials and Devices XIII (Vol. 10532). [105320K] SPIE. https://doi.org/10.1117/12.2284486

Radiation and process-induced damage in Ga2O3 . / Pearton, S. J.; Yang, Jiancheng; Ren, F.; Yang, G.; Kim, Ji Hyun; Stavola, M.; Kuramata, A.

Gallium Nitride Materials and Devices XIII. ed. / Hiroshi Fujioka; Hadis Morkoc; Jen-Inn Chyi. Vol. 10532 SPIE, 2018. 105320K.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Pearton, SJ, Yang, J, Ren, F, Yang, G, Kim, JH, Stavola, M & Kuramata, A 2018, Radiation and process-induced damage in Ga2O3 in H Fujioka, H Morkoc & J-I Chyi (eds), Gallium Nitride Materials and Devices XIII. vol. 10532, 105320K, SPIE, Gallium Nitride Materials and Devices XIII 2018, San Francisco, United States, 18/1/29. https://doi.org/10.1117/12.2284486
Pearton SJ, Yang J, Ren F, Yang G, Kim JH, Stavola M et al. Radiation and process-induced damage in Ga2O3 In Fujioka H, Morkoc H, Chyi J-I, editors, Gallium Nitride Materials and Devices XIII. Vol. 10532. SPIE. 2018. 105320K https://doi.org/10.1117/12.2284486
Pearton, S. J. ; Yang, Jiancheng ; Ren, F. ; Yang, G. ; Kim, Ji Hyun ; Stavola, M. ; Kuramata, A. / Radiation and process-induced damage in Ga2O3 Gallium Nitride Materials and Devices XIII. editor / Hiroshi Fujioka ; Hadis Morkoc ; Jen-Inn Chyi. Vol. 10532 SPIE, 2018.
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