Radiation damage effects in Ga2O3 materials and devices

Jihyun Kim; Stephen J. Pearton; Chaker Fares; Jiancheng Yang; Fan Ren; Suhyun Kim; Alexander Y. Polyakov

doi:10.1039/c8tc04193h

Radiation damage effects in Ga₂O₃ materials and devices

Jihyun Kim, Stephen J. Pearton, Chaker Fares, Jiancheng Yang, Fan Ren, Suhyun Kim, Alexander Y. Polyakov

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Review article › peer-review

43 Citations (Scopus)

Abstract

The strong bonding in wide bandgap semiconductors gives them an intrinsic radiation hardness. Their suitability for space missions or military applications, where issues of radiation tolerance are critical, is widely known. Especially β-Ga₂O₃, an ultra-wide bandgap material, is attracting interest for power electronics and solar-blind ultraviolet detection. Beside its superior thermal and chemical stabilities, the effects of radiation damage on Ga₂O₃ are of fundamental interest in space-based and some terrestrial applications. We review the effect on the material properties and device characteristics of proton, electron, X-ray, gamma ray and neutron irradiation of β-Ga₂O₃ electronic and optoelectronic devices under conditions relevant to low earth orbit of satellites containing these types of devices.

Original language	English
Pages (from-to)	10-24
Number of pages	15
Journal	Journal of Materials Chemistry C
Volume	7
Issue number	1
DOIs	https://doi.org/10.1039/c8tc04193h
Publication status	Published - 2019

ASJC Scopus subject areas

Chemistry(all)
Materials Chemistry

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10.1039/c8tc04193h

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title = "Radiation damage effects in Ga2O3 materials and devices",

abstract = "The strong bonding in wide bandgap semiconductors gives them an intrinsic radiation hardness. Their suitability for space missions or military applications, where issues of radiation tolerance are critical, is widely known. Especially β-Ga2O3, an ultra-wide bandgap material, is attracting interest for power electronics and solar-blind ultraviolet detection. Beside its superior thermal and chemical stabilities, the effects of radiation damage on Ga2O3 are of fundamental interest in space-based and some terrestrial applications. We review the effect on the material properties and device characteristics of proton, electron, X-ray, gamma ray and neutron irradiation of β-Ga2O3 electronic and optoelectronic devices under conditions relevant to low earth orbit of satellites containing these types of devices.",

author = "Jihyun Kim and Pearton, {Stephen J.} and Chaker Fares and Jiancheng Yang and Fan Ren and Suhyun Kim and Polyakov, {Alexander Y.}",

note = "Funding Information: The work at Korea University was supported by Space Core Technology Development Program (2017M1A3A3A02015033) and the Technology Development Program to Solve Climate Changes (2017M1A2A2087351) through the National Research Foundation of Korea funded by the Ministry of Science, ICT and Future Planning of Korea. The work at UF is partially supported by HDTRA1-17-1-0011 (Jacob Calkins, monitor). The project or effort depicted is sponsored by the Department of the Defense, Defense Threat Reduction Agency. The content of the information does not necessarily reflect the position or the policy of the federal government, and no official endorsement should be inferred. The work at NUST MISiS was supported in part by the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST (MISiS) (K2-2014-055). Publisher Copyright: {\textcopyright} The Royal Society of Chemistry.",

year = "2019",

doi = "10.1039/c8tc04193h",

language = "English",

volume = "7",

pages = "10--24",

journal = "Journal of Materials Chemistry C",

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publisher = "Royal Society of Chemistry",

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TY - JOUR

T1 - Radiation damage effects in Ga2O3 materials and devices

AU - Kim, Jihyun

AU - Pearton, Stephen J.

AU - Fares, Chaker

AU - Yang, Jiancheng

AU - Ren, Fan

AU - Kim, Suhyun

AU - Polyakov, Alexander Y.

N1 - Funding Information: The work at Korea University was supported by Space Core Technology Development Program (2017M1A3A3A02015033) and the Technology Development Program to Solve Climate Changes (2017M1A2A2087351) through the National Research Foundation of Korea funded by the Ministry of Science, ICT and Future Planning of Korea. The work at UF is partially supported by HDTRA1-17-1-0011 (Jacob Calkins, monitor). The project or effort depicted is sponsored by the Department of the Defense, Defense Threat Reduction Agency. The content of the information does not necessarily reflect the position or the policy of the federal government, and no official endorsement should be inferred. The work at NUST MISiS was supported in part by the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST (MISiS) (K2-2014-055). Publisher Copyright: © The Royal Society of Chemistry.

PY - 2019

Y1 - 2019

N2 - The strong bonding in wide bandgap semiconductors gives them an intrinsic radiation hardness. Their suitability for space missions or military applications, where issues of radiation tolerance are critical, is widely known. Especially β-Ga2O3, an ultra-wide bandgap material, is attracting interest for power electronics and solar-blind ultraviolet detection. Beside its superior thermal and chemical stabilities, the effects of radiation damage on Ga2O3 are of fundamental interest in space-based and some terrestrial applications. We review the effect on the material properties and device characteristics of proton, electron, X-ray, gamma ray and neutron irradiation of β-Ga2O3 electronic and optoelectronic devices under conditions relevant to low earth orbit of satellites containing these types of devices.

AB - The strong bonding in wide bandgap semiconductors gives them an intrinsic radiation hardness. Their suitability for space missions or military applications, where issues of radiation tolerance are critical, is widely known. Especially β-Ga2O3, an ultra-wide bandgap material, is attracting interest for power electronics and solar-blind ultraviolet detection. Beside its superior thermal and chemical stabilities, the effects of radiation damage on Ga2O3 are of fundamental interest in space-based and some terrestrial applications. We review the effect on the material properties and device characteristics of proton, electron, X-ray, gamma ray and neutron irradiation of β-Ga2O3 electronic and optoelectronic devices under conditions relevant to low earth orbit of satellites containing these types of devices.

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