Radiation damage effects in Ga2O3 materials and devices

Ji Hyun Kim, Stephen J. Pearton, Chaker Fares, Jiancheng Yang, Fan Ren, Suhyun Kim, Alexander Y. Polyakov

Research output: Contribution to journalReview articlepeer-review

37 Citations (Scopus)

Abstract

The strong bonding in wide bandgap semiconductors gives them an intrinsic radiation hardness. Their suitability for space missions or military applications, where issues of radiation tolerance are critical, is widely known. Especially β-Ga2O3, an ultra-wide bandgap material, is attracting interest for power electronics and solar-blind ultraviolet detection. Beside its superior thermal and chemical stabilities, the effects of radiation damage on Ga2O3 are of fundamental interest in space-based and some terrestrial applications. We review the effect on the material properties and device characteristics of proton, electron, X-ray, gamma ray and neutron irradiation of β-Ga2O3 electronic and optoelectronic devices under conditions relevant to low earth orbit of satellites containing these types of devices.

Original languageEnglish
Pages (from-to)10-24
Number of pages15
JournalJournal of Materials Chemistry C
Volume7
Issue number1
DOIs
Publication statusPublished - 2019 Jan 1

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry

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