TY - JOUR
T1 - Radiation damage effects in Ga2O3 materials and devices
AU - Kim, Jihyun
AU - Pearton, Stephen J.
AU - Fares, Chaker
AU - Yang, Jiancheng
AU - Ren, Fan
AU - Kim, Suhyun
AU - Polyakov, Alexander Y.
N1 - Funding Information:
The work at Korea University was supported by Space Core Technology Development Program (2017M1A3A3A02015033) and the Technology Development Program to Solve Climate Changes (2017M1A2A2087351) through the National Research Foundation of Korea funded by the Ministry of Science, ICT and Future Planning of Korea. The work at UF is partially supported by HDTRA1-17-1-0011 (Jacob Calkins, monitor). The project or effort depicted is sponsored by the Department of the Defense, Defense Threat Reduction Agency. The content of the information does not necessarily reflect the position or the policy of the federal government, and no official endorsement should be inferred. The work at NUST MISiS was supported in part by the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST (MISiS) (K2-2014-055).
Publisher Copyright:
© The Royal Society of Chemistry.
PY - 2019
Y1 - 2019
N2 - The strong bonding in wide bandgap semiconductors gives them an intrinsic radiation hardness. Their suitability for space missions or military applications, where issues of radiation tolerance are critical, is widely known. Especially β-Ga2O3, an ultra-wide bandgap material, is attracting interest for power electronics and solar-blind ultraviolet detection. Beside its superior thermal and chemical stabilities, the effects of radiation damage on Ga2O3 are of fundamental interest in space-based and some terrestrial applications. We review the effect on the material properties and device characteristics of proton, electron, X-ray, gamma ray and neutron irradiation of β-Ga2O3 electronic and optoelectronic devices under conditions relevant to low earth orbit of satellites containing these types of devices.
AB - The strong bonding in wide bandgap semiconductors gives them an intrinsic radiation hardness. Their suitability for space missions or military applications, where issues of radiation tolerance are critical, is widely known. Especially β-Ga2O3, an ultra-wide bandgap material, is attracting interest for power electronics and solar-blind ultraviolet detection. Beside its superior thermal and chemical stabilities, the effects of radiation damage on Ga2O3 are of fundamental interest in space-based and some terrestrial applications. We review the effect on the material properties and device characteristics of proton, electron, X-ray, gamma ray and neutron irradiation of β-Ga2O3 electronic and optoelectronic devices under conditions relevant to low earth orbit of satellites containing these types of devices.
UR - http://www.scopus.com/inward/record.url?scp=85059055676&partnerID=8YFLogxK
U2 - 10.1039/c8tc04193h
DO - 10.1039/c8tc04193h
M3 - Review article
AN - SCOPUS:85059055676
VL - 7
SP - 10
EP - 24
JO - Journal of Materials Chemistry C
JF - Journal of Materials Chemistry C
SN - 2050-7526
IS - 1
ER -