Abstract
The strong bonding in wide bandgap semiconductors gives them an intrinsic radiation hardness. Their suitability for space missions or military applications, where issues of radiation tolerance are critical, is widely known. Especially β-Ga2O3, an ultra-wide bandgap material, is attracting interest for power electronics and solar-blind ultraviolet detection. Beside its superior thermal and chemical stabilities, the effects of radiation damage on Ga2O3 are of fundamental interest in space-based and some terrestrial applications. We review the effect on the material properties and device characteristics of proton, electron, X-ray, gamma ray and neutron irradiation of β-Ga2O3 electronic and optoelectronic devices under conditions relevant to low earth orbit of satellites containing these types of devices.
| Original language | English |
|---|---|
| Pages (from-to) | 10-24 |
| Number of pages | 15 |
| Journal | Journal of Materials Chemistry C |
| Volume | 7 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2019 Jan 1 |
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ASJC Scopus subject areas
- Chemistry(all)
- Materials Chemistry
Cite this
Radiation damage effects in Ga2O3 materials and devices. / Kim, Ji Hyun; Pearton, Stephen J.; Fares, Chaker; Yang, Jiancheng; Ren, Fan; Kim, Suhyun; Polyakov, Alexander Y.
In: Journal of Materials Chemistry C, Vol. 7, No. 1, 01.01.2019, p. 10-24.Research output: Contribution to journal › Review article
}
TY - JOUR
T1 - Radiation damage effects in Ga2O3 materials and devices
AU - Kim, Ji Hyun
AU - Pearton, Stephen J.
AU - Fares, Chaker
AU - Yang, Jiancheng
AU - Ren, Fan
AU - Kim, Suhyun
AU - Polyakov, Alexander Y.
PY - 2019/1/1
Y1 - 2019/1/1
N2 - The strong bonding in wide bandgap semiconductors gives them an intrinsic radiation hardness. Their suitability for space missions or military applications, where issues of radiation tolerance are critical, is widely known. Especially β-Ga2O3, an ultra-wide bandgap material, is attracting interest for power electronics and solar-blind ultraviolet detection. Beside its superior thermal and chemical stabilities, the effects of radiation damage on Ga2O3 are of fundamental interest in space-based and some terrestrial applications. We review the effect on the material properties and device characteristics of proton, electron, X-ray, gamma ray and neutron irradiation of β-Ga2O3 electronic and optoelectronic devices under conditions relevant to low earth orbit of satellites containing these types of devices.
AB - The strong bonding in wide bandgap semiconductors gives them an intrinsic radiation hardness. Their suitability for space missions or military applications, where issues of radiation tolerance are critical, is widely known. Especially β-Ga2O3, an ultra-wide bandgap material, is attracting interest for power electronics and solar-blind ultraviolet detection. Beside its superior thermal and chemical stabilities, the effects of radiation damage on Ga2O3 are of fundamental interest in space-based and some terrestrial applications. We review the effect on the material properties and device characteristics of proton, electron, X-ray, gamma ray and neutron irradiation of β-Ga2O3 electronic and optoelectronic devices under conditions relevant to low earth orbit of satellites containing these types of devices.
UR - http://www.scopus.com/inward/record.url?scp=85059055676&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85059055676&partnerID=8YFLogxK
U2 - 10.1039/c8tc04193h
DO - 10.1039/c8tc04193h
M3 - Review article
AN - SCOPUS:85059055676
VL - 7
SP - 10
EP - 24
JO - Journal of Materials Chemistry C
JF - Journal of Materials Chemistry C
SN - 2050-7526
IS - 1
ER -