Radiation Damage in GaN-Based Materials and Devices

S. J. Pearton, Richard Deist, Alexander Y. Polyakov, Fan Ren, Lu Liu, Ji Hyun Kim

Research output: Chapter in Book/Report/Conference proceedingChapter

3 Citations (Scopus)

Abstract

A review of electron, proton and neutron damage in GaN and AlGaN materials and devices such as high electron mobility transistors and lightemitting diodes is presented. A comparison of theoretical and experimental threshold displacement energies is given, along with a summary of energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects. Many studies have shown that GaN is several orders of magnitude more resistant to radiation damage than GaAs, i.e., it can withstand radiation doses at least two orders of magnitude higher than those degrading GaAs of similar doping level. In terms of heterostructures, the initial data suggests that the radiation hardness decreases in the order AlN/GaN > AlGaN/GaN > InAlN/GaN, consistent with the average bond strengths in the Al-based materials. Many issues still have to be addressed. Among them are the strong asymmetry in carrier removal rates in n- and p-type GaN and interaction of radiation defects with Mg acceptors, and the poor understanding of the interaction of radiation defects in doped nitrides with the dislocations always present.

Original languageEnglish
Title of host publicationAdvanced Energy Materials
PublisherWiley Blackwell
Pages345-387
Number of pages43
ISBN (Print)9781118904923, 9781118686294
DOIs
Publication statusPublished - 2014 Feb 17

Keywords

  • Aluminum Gallium Nitride
  • Defects
  • Gallium Nitride
  • Radiation damage
  • Semiconductor devices

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

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  • Cite this

    Pearton, S. J., Deist, R., Polyakov, A. Y., Ren, F., Liu, L., & Kim, J. H. (2014). Radiation Damage in GaN-Based Materials and Devices. In Advanced Energy Materials (pp. 345-387). Wiley Blackwell. https://doi.org/10.1002/9781118904923.ch9