Radiation Damage in GaN-Based Materials and Devices

S. J. Pearton, Richard Deist, Alexander Y. Polyakov, Fan Ren, Lu Liu, Ji Hyun Kim

Research output: Chapter in Book/Report/Conference proceedingChapter

2 Citations (Scopus)

Abstract

A review of electron, proton and neutron damage in GaN and AlGaN materials and devices such as high electron mobility transistors and lightemitting diodes is presented. A comparison of theoretical and experimental threshold displacement energies is given, along with a summary of energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects. Many studies have shown that GaN is several orders of magnitude more resistant to radiation damage than GaAs, i.e., it can withstand radiation doses at least two orders of magnitude higher than those degrading GaAs of similar doping level. In terms of heterostructures, the initial data suggests that the radiation hardness decreases in the order AlN/GaN > AlGaN/GaN > InAlN/GaN, consistent with the average bond strengths in the Al-based materials. Many issues still have to be addressed. Among them are the strong asymmetry in carrier removal rates in n- and p-type GaN and interaction of radiation defects with Mg acceptors, and the poor understanding of the interaction of radiation defects in doped nitrides with the dislocations always present.

Original languageEnglish
Title of host publicationAdvanced Energy Materials
PublisherWiley Blackwell
Pages345-387
Number of pages43
ISBN (Print)9781118904923, 9781118686294
DOIs
Publication statusPublished - 2014 Feb 17

Fingerprint

Radiation damage
Radiation
Defects
High electron mobility transistors
Nitrides
Electron energy levels
Dosimetry
Heterojunctions
Protons
Neutrons
Diodes
Hardness
Doping (additives)
Electrons
gallium arsenide
aluminum gallium nitride

Keywords

  • Aluminum Gallium Nitride
  • Defects
  • Gallium Nitride
  • Radiation damage
  • Semiconductor devices

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

Cite this

Pearton, S. J., Deist, R., Polyakov, A. Y., Ren, F., Liu, L., & Kim, J. H. (2014). Radiation Damage in GaN-Based Materials and Devices. In Advanced Energy Materials (pp. 345-387). Wiley Blackwell. https://doi.org/10.1002/9781118904923.ch9

Radiation Damage in GaN-Based Materials and Devices. / Pearton, S. J.; Deist, Richard; Polyakov, Alexander Y.; Ren, Fan; Liu, Lu; Kim, Ji Hyun.

Advanced Energy Materials. Wiley Blackwell, 2014. p. 345-387.

Research output: Chapter in Book/Report/Conference proceedingChapter

Pearton, SJ, Deist, R, Polyakov, AY, Ren, F, Liu, L & Kim, JH 2014, Radiation Damage in GaN-Based Materials and Devices. in Advanced Energy Materials. Wiley Blackwell, pp. 345-387. https://doi.org/10.1002/9781118904923.ch9
Pearton SJ, Deist R, Polyakov AY, Ren F, Liu L, Kim JH. Radiation Damage in GaN-Based Materials and Devices. In Advanced Energy Materials. Wiley Blackwell. 2014. p. 345-387 https://doi.org/10.1002/9781118904923.ch9
Pearton, S. J. ; Deist, Richard ; Polyakov, Alexander Y. ; Ren, Fan ; Liu, Lu ; Kim, Ji Hyun. / Radiation Damage in GaN-Based Materials and Devices. Advanced Energy Materials. Wiley Blackwell, 2014. pp. 345-387
@inbook{04cfc0a4f023448aa354db47800c663c,
title = "Radiation Damage in GaN-Based Materials and Devices",
abstract = "A review of electron, proton and neutron damage in GaN and AlGaN materials and devices such as high electron mobility transistors and lightemitting diodes is presented. A comparison of theoretical and experimental threshold displacement energies is given, along with a summary of energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects. Many studies have shown that GaN is several orders of magnitude more resistant to radiation damage than GaAs, i.e., it can withstand radiation doses at least two orders of magnitude higher than those degrading GaAs of similar doping level. In terms of heterostructures, the initial data suggests that the radiation hardness decreases in the order AlN/GaN > AlGaN/GaN > InAlN/GaN, consistent with the average bond strengths in the Al-based materials. Many issues still have to be addressed. Among them are the strong asymmetry in carrier removal rates in n- and p-type GaN and interaction of radiation defects with Mg acceptors, and the poor understanding of the interaction of radiation defects in doped nitrides with the dislocations always present.",
keywords = "Aluminum Gallium Nitride, Defects, Gallium Nitride, Radiation damage, Semiconductor devices",
author = "Pearton, {S. J.} and Richard Deist and Polyakov, {Alexander Y.} and Fan Ren and Lu Liu and Kim, {Ji Hyun}",
year = "2014",
month = "2",
day = "17",
doi = "10.1002/9781118904923.ch9",
language = "English",
isbn = "9781118904923",
pages = "345--387",
booktitle = "Advanced Energy Materials",
publisher = "Wiley Blackwell",

}

TY - CHAP

T1 - Radiation Damage in GaN-Based Materials and Devices

AU - Pearton, S. J.

AU - Deist, Richard

AU - Polyakov, Alexander Y.

AU - Ren, Fan

AU - Liu, Lu

AU - Kim, Ji Hyun

PY - 2014/2/17

Y1 - 2014/2/17

N2 - A review of electron, proton and neutron damage in GaN and AlGaN materials and devices such as high electron mobility transistors and lightemitting diodes is presented. A comparison of theoretical and experimental threshold displacement energies is given, along with a summary of energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects. Many studies have shown that GaN is several orders of magnitude more resistant to radiation damage than GaAs, i.e., it can withstand radiation doses at least two orders of magnitude higher than those degrading GaAs of similar doping level. In terms of heterostructures, the initial data suggests that the radiation hardness decreases in the order AlN/GaN > AlGaN/GaN > InAlN/GaN, consistent with the average bond strengths in the Al-based materials. Many issues still have to be addressed. Among them are the strong asymmetry in carrier removal rates in n- and p-type GaN and interaction of radiation defects with Mg acceptors, and the poor understanding of the interaction of radiation defects in doped nitrides with the dislocations always present.

AB - A review of electron, proton and neutron damage in GaN and AlGaN materials and devices such as high electron mobility transistors and lightemitting diodes is presented. A comparison of theoretical and experimental threshold displacement energies is given, along with a summary of energy levels introduced by different forms of radiation, carrier removal rates and role of existing defects. Many studies have shown that GaN is several orders of magnitude more resistant to radiation damage than GaAs, i.e., it can withstand radiation doses at least two orders of magnitude higher than those degrading GaAs of similar doping level. In terms of heterostructures, the initial data suggests that the radiation hardness decreases in the order AlN/GaN > AlGaN/GaN > InAlN/GaN, consistent with the average bond strengths in the Al-based materials. Many issues still have to be addressed. Among them are the strong asymmetry in carrier removal rates in n- and p-type GaN and interaction of radiation defects with Mg acceptors, and the poor understanding of the interaction of radiation defects in doped nitrides with the dislocations always present.

KW - Aluminum Gallium Nitride

KW - Defects

KW - Gallium Nitride

KW - Radiation damage

KW - Semiconductor devices

UR - http://www.scopus.com/inward/record.url?scp=84927675840&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84927675840&partnerID=8YFLogxK

U2 - 10.1002/9781118904923.ch9

DO - 10.1002/9781118904923.ch9

M3 - Chapter

AN - SCOPUS:84927675840

SN - 9781118904923

SN - 9781118686294

SP - 345

EP - 387

BT - Advanced Energy Materials

PB - Wiley Blackwell

ER -