Radiation damage in GaN-based materials and devices

Erin Patrick, Mark E. Law, S. J. Pearton, Richard Deist, Fan Ren, Lu Liu, A. Y. Polyakov, Ji Hyun Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A review of the effects of proton, neutron, γ-ray and electron irradiation on GaN materials and devices is presented. Neutron irradiation tends to create disordered regions in the GaN, while the damage from the other forms of radiation is more typically point defects. In all cases, the damaged region contains carrier traps that reduce the mobility and conductivity of the GaN and at high enough doses, a significant degradation of device performance. GaN is several orders of magnitude more resistant to radiation damage than GaAs of similar doping concentrations. In terms of heterostructures, preliminary data suggests that the radiation hardness decreases in the order AlN/GaN >AlGaN/GaN > InAlN/GaN, consistent with the average bond strengths in the Al-based materials. The radiation damage can alter electric field profiles and drain current due to trapped negative charge and lead to increased breakdown voltages and apparent reliability. Simulations of this effect show good agreement with experiments. We also discuss the literature on effects of different radiation types on the performance of GaN-based high electron mobility transistors.

Original languageEnglish
Title of host publication8th Pacific Rim International Congress on Advanced Materials and Processing 2013, PRICM 8
PublisherJohn Wiley and Sons Inc.
Pages1753-1764
Number of pages12
Volume2
ISBN (Print)9781632660008
Publication statusPublished - 2013 Jan 1
Event8th Pacific Rim International Congress on Advanced Materials and Processing 2013, PRICM 8 - Waikoloa, HI, United States
Duration: 2013 Aug 42013 Aug 9

Other

Other8th Pacific Rim International Congress on Advanced Materials and Processing 2013, PRICM 8
CountryUnited States
CityWaikoloa, HI
Period13/8/413/8/9

Fingerprint

Radiation damage
Radiation
Electron irradiation
Neutron irradiation
Drain current
High electron mobility transistors
Point defects
Electric breakdown
Heterojunctions
Protons
Neutrons
Hardness
Electric fields
Doping (additives)
Degradation
Experiments

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Patrick, E., Law, M. E., Pearton, S. J., Deist, R., Ren, F., Liu, L., ... Kim, J. H. (2013). Radiation damage in GaN-based materials and devices. In 8th Pacific Rim International Congress on Advanced Materials and Processing 2013, PRICM 8 (Vol. 2, pp. 1753-1764). John Wiley and Sons Inc..

Radiation damage in GaN-based materials and devices. / Patrick, Erin; Law, Mark E.; Pearton, S. J.; Deist, Richard; Ren, Fan; Liu, Lu; Polyakov, A. Y.; Kim, Ji Hyun.

8th Pacific Rim International Congress on Advanced Materials and Processing 2013, PRICM 8. Vol. 2 John Wiley and Sons Inc., 2013. p. 1753-1764.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Patrick, E, Law, ME, Pearton, SJ, Deist, R, Ren, F, Liu, L, Polyakov, AY & Kim, JH 2013, Radiation damage in GaN-based materials and devices. in 8th Pacific Rim International Congress on Advanced Materials and Processing 2013, PRICM 8. vol. 2, John Wiley and Sons Inc., pp. 1753-1764, 8th Pacific Rim International Congress on Advanced Materials and Processing 2013, PRICM 8, Waikoloa, HI, United States, 13/8/4.
Patrick E, Law ME, Pearton SJ, Deist R, Ren F, Liu L et al. Radiation damage in GaN-based materials and devices. In 8th Pacific Rim International Congress on Advanced Materials and Processing 2013, PRICM 8. Vol. 2. John Wiley and Sons Inc. 2013. p. 1753-1764
Patrick, Erin ; Law, Mark E. ; Pearton, S. J. ; Deist, Richard ; Ren, Fan ; Liu, Lu ; Polyakov, A. Y. ; Kim, Ji Hyun. / Radiation damage in GaN-based materials and devices. 8th Pacific Rim International Congress on Advanced Materials and Processing 2013, PRICM 8. Vol. 2 John Wiley and Sons Inc., 2013. pp. 1753-1764
@inproceedings{d20365f5d85245ada62e6df472a69af7,
title = "Radiation damage in GaN-based materials and devices",
abstract = "A review of the effects of proton, neutron, γ-ray and electron irradiation on GaN materials and devices is presented. Neutron irradiation tends to create disordered regions in the GaN, while the damage from the other forms of radiation is more typically point defects. In all cases, the damaged region contains carrier traps that reduce the mobility and conductivity of the GaN and at high enough doses, a significant degradation of device performance. GaN is several orders of magnitude more resistant to radiation damage than GaAs of similar doping concentrations. In terms of heterostructures, preliminary data suggests that the radiation hardness decreases in the order AlN/GaN >AlGaN/GaN > InAlN/GaN, consistent with the average bond strengths in the Al-based materials. The radiation damage can alter electric field profiles and drain current due to trapped negative charge and lead to increased breakdown voltages and apparent reliability. Simulations of this effect show good agreement with experiments. We also discuss the literature on effects of different radiation types on the performance of GaN-based high electron mobility transistors.",
keywords = "AlGaN, GaN, Radiation damage",
author = "Erin Patrick and Law, {Mark E.} and Pearton, {S. J.} and Richard Deist and Fan Ren and Lu Liu and Polyakov, {A. Y.} and Kim, {Ji Hyun}",
year = "2013",
month = "1",
day = "1",
language = "English",
isbn = "9781632660008",
volume = "2",
pages = "1753--1764",
booktitle = "8th Pacific Rim International Congress on Advanced Materials and Processing 2013, PRICM 8",
publisher = "John Wiley and Sons Inc.",

}

TY - GEN

T1 - Radiation damage in GaN-based materials and devices

AU - Patrick, Erin

AU - Law, Mark E.

AU - Pearton, S. J.

AU - Deist, Richard

AU - Ren, Fan

AU - Liu, Lu

AU - Polyakov, A. Y.

AU - Kim, Ji Hyun

PY - 2013/1/1

Y1 - 2013/1/1

N2 - A review of the effects of proton, neutron, γ-ray and electron irradiation on GaN materials and devices is presented. Neutron irradiation tends to create disordered regions in the GaN, while the damage from the other forms of radiation is more typically point defects. In all cases, the damaged region contains carrier traps that reduce the mobility and conductivity of the GaN and at high enough doses, a significant degradation of device performance. GaN is several orders of magnitude more resistant to radiation damage than GaAs of similar doping concentrations. In terms of heterostructures, preliminary data suggests that the radiation hardness decreases in the order AlN/GaN >AlGaN/GaN > InAlN/GaN, consistent with the average bond strengths in the Al-based materials. The radiation damage can alter electric field profiles and drain current due to trapped negative charge and lead to increased breakdown voltages and apparent reliability. Simulations of this effect show good agreement with experiments. We also discuss the literature on effects of different radiation types on the performance of GaN-based high electron mobility transistors.

AB - A review of the effects of proton, neutron, γ-ray and electron irradiation on GaN materials and devices is presented. Neutron irradiation tends to create disordered regions in the GaN, while the damage from the other forms of radiation is more typically point defects. In all cases, the damaged region contains carrier traps that reduce the mobility and conductivity of the GaN and at high enough doses, a significant degradation of device performance. GaN is several orders of magnitude more resistant to radiation damage than GaAs of similar doping concentrations. In terms of heterostructures, preliminary data suggests that the radiation hardness decreases in the order AlN/GaN >AlGaN/GaN > InAlN/GaN, consistent with the average bond strengths in the Al-based materials. The radiation damage can alter electric field profiles and drain current due to trapped negative charge and lead to increased breakdown voltages and apparent reliability. Simulations of this effect show good agreement with experiments. We also discuss the literature on effects of different radiation types on the performance of GaN-based high electron mobility transistors.

KW - AlGaN

KW - GaN

KW - Radiation damage

UR - http://www.scopus.com/inward/record.url?scp=84904100235&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84904100235&partnerID=8YFLogxK

M3 - Conference contribution

SN - 9781632660008

VL - 2

SP - 1753

EP - 1764

BT - 8th Pacific Rim International Congress on Advanced Materials and Processing 2013, PRICM 8

PB - John Wiley and Sons Inc.

ER -