Abstract
A movement of basal plane segments of dislocations in GaN films grown by epitaxial lateral overgrowth under low energy electron beam irradiation (LEEBI) was studied by the electron beam induced current (EBIC) method. Only a small fraction of the basal plane dislocation segments were susceptible to irradiation and the movement was limited to relatively short distances. The effect is explained by the radiation enhanced dislocation glide (REDG) in the structure with strong pinning. A dislocation velocity under LEEBI with a beam current lower than 1 nA was estimated as about 10nm/s. The results assuming the REDG for prismatic plane dislocations were presented.
| Original language | English |
|---|---|
| Article number | 05FM03 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 55 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2016 May 1 |
| Externally published | Yes |
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Yakimov, E. B., Vergeles, P. S., Polyakov, A. Y., Lee, I-H., & Pearton, S. J. (2016). Radiation enhanced basal plane dislocation glide in GaN. Japanese Journal of Applied Physics, 55(5), [05FM03]. https://doi.org/10.7567/JJAP.55.05FM03