Radiation enhanced basal plane dislocation glide in GaN

Eugene B. Yakimov; Pavel S. Vergeles; Alexander Y. Polyakov; In Hwan Lee; Stephen J. Pearton

doi:10.7567/JJAP.55.05FM03

Radiation enhanced basal plane dislocation glide in GaN

Eugene B. Yakimov, Pavel S. Vergeles, Alexander Y. Polyakov, In Hwan Lee, Stephen J. Pearton

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

A movement of basal plane segments of dislocations in GaN films grown by epitaxial lateral overgrowth under low energy electron beam irradiation (LEEBI) was studied by the electron beam induced current (EBIC) method. Only a small fraction of the basal plane dislocation segments were susceptible to irradiation and the movement was limited to relatively short distances. The effect is explained by the radiation enhanced dislocation glide (REDG) in the structure with strong pinning. A dislocation velocity under LEEBI with a beam current lower than 1 nA was estimated as about 10nm/s. The results assuming the REDG for prismatic plane dislocations were presented.

Original language	English
Article number	05FM03
Journal	Japanese journal of applied physics
Volume	55
Issue number	5
DOIs	https://doi.org/10.7567/JJAP.55.05FM03
Publication status	Published - 2016 May
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Radiation enhanced basal plane dislocation glide in GaN",

abstract = "A movement of basal plane segments of dislocations in GaN films grown by epitaxial lateral overgrowth under low energy electron beam irradiation (LEEBI) was studied by the electron beam induced current (EBIC) method. Only a small fraction of the basal plane dislocation segments were susceptible to irradiation and the movement was limited to relatively short distances. The effect is explained by the radiation enhanced dislocation glide (REDG) in the structure with strong pinning. A dislocation velocity under LEEBI with a beam current lower than 1 nA was estimated as about 10nm/s. The results assuming the REDG for prismatic plane dislocations were presented.",

author = "Yakimov, {Eugene B.} and Vergeles, {Pavel S.} and Polyakov, {Alexander Y.} and Lee, {In Hwan} and Pearton, {Stephen J.}",

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language = "English",

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AU - Yakimov, Eugene B.

AU - Vergeles, Pavel S.

AU - Polyakov, Alexander Y.

AU - Lee, In Hwan

AU - Pearton, Stephen J.

N1 - Funding Information: The work was partially supported by the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST "MISiS" (No. K2-2014-055) and by the Russian Foundation for Basic Research (Grant No. 14-29-04056). Publisher Copyright: © 2016 The Japan Society of Applied Physics.

PY - 2016/5

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N2 - A movement of basal plane segments of dislocations in GaN films grown by epitaxial lateral overgrowth under low energy electron beam irradiation (LEEBI) was studied by the electron beam induced current (EBIC) method. Only a small fraction of the basal plane dislocation segments were susceptible to irradiation and the movement was limited to relatively short distances. The effect is explained by the radiation enhanced dislocation glide (REDG) in the structure with strong pinning. A dislocation velocity under LEEBI with a beam current lower than 1 nA was estimated as about 10nm/s. The results assuming the REDG for prismatic plane dislocations were presented.

AB - A movement of basal plane segments of dislocations in GaN films grown by epitaxial lateral overgrowth under low energy electron beam irradiation (LEEBI) was studied by the electron beam induced current (EBIC) method. Only a small fraction of the basal plane dislocation segments were susceptible to irradiation and the movement was limited to relatively short distances. The effect is explained by the radiation enhanced dislocation glide (REDG) in the structure with strong pinning. A dislocation velocity under LEEBI with a beam current lower than 1 nA was estimated as about 10nm/s. The results assuming the REDG for prismatic plane dislocations were presented.

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Radiation enhanced basal plane dislocation glide in GaN

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