Radiation enhanced basal plane dislocation glide in GaN

Eugene B. Yakimov; Pavel S. Vergeles; Alexander Y. Polyakov; In-Hwan Lee; Stephen J. Pearton

doi:10.7567/JJAP.55.05FM03

Radiation enhanced basal plane dislocation glide in GaN

Eugene B. Yakimov, Pavel S. Vergeles, Alexander Y. Polyakov, In-Hwan Lee, Stephen J. Pearton

Research output: Contribution to journal › Article

7 Citations (Scopus)

Abstract

A movement of basal plane segments of dislocations in GaN films grown by epitaxial lateral overgrowth under low energy electron beam irradiation (LEEBI) was studied by the electron beam induced current (EBIC) method. Only a small fraction of the basal plane dislocation segments were susceptible to irradiation and the movement was limited to relatively short distances. The effect is explained by the radiation enhanced dislocation glide (REDG) in the structure with strong pinning. A dislocation velocity under LEEBI with a beam current lower than 1 nA was estimated as about 10nm/s. The results assuming the REDG for prismatic plane dislocations were presented.

Original language	English
Article number	05FM03
Journal	Japanese Journal of Applied Physics
Volume	55
Issue number	5
DOIs	https://doi.org/10.7567/JJAP.55.05FM03
Publication status	Published - 2016 May 1
Externally published	Yes

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ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Cite this

Yakimov, E. B., Vergeles, P. S., Polyakov, A. Y., Lee, I-H., & Pearton, S. J. (2016). Radiation enhanced basal plane dislocation glide in GaN. Japanese Journal of Applied Physics, 55(5), [05FM03]. https://doi.org/10.7567/JJAP.55.05FM03

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AU - Lee, In-Hwan

AU - Pearton, Stephen J.

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AB - A movement of basal plane segments of dislocations in GaN films grown by epitaxial lateral overgrowth under low energy electron beam irradiation (LEEBI) was studied by the electron beam induced current (EBIC) method. Only a small fraction of the basal plane dislocation segments were susceptible to irradiation and the movement was limited to relatively short distances. The effect is explained by the radiation enhanced dislocation glide (REDG) in the structure with strong pinning. A dislocation velocity under LEEBI with a beam current lower than 1 nA was estimated as about 10nm/s. The results assuming the REDG for prismatic plane dislocations were presented.

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10.7567/JJAP.55.05FM03