Radiation enhanced basal plane dislocation glide in GaN

Eugene B. Yakimov, Pavel S. Vergeles, Alexander Y. Polyakov, In-Hwan Lee, Stephen J. Pearton

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Abstract

A movement of basal plane segments of dislocations in GaN films grown by epitaxial lateral overgrowth under low energy electron beam irradiation (LEEBI) was studied by the electron beam induced current (EBIC) method. Only a small fraction of the basal plane dislocation segments were susceptible to irradiation and the movement was limited to relatively short distances. The effect is explained by the radiation enhanced dislocation glide (REDG) in the structure with strong pinning. A dislocation velocity under LEEBI with a beam current lower than 1 nA was estimated as about 10nm/s. The results assuming the REDG for prismatic plane dislocations were presented.

Original languageEnglish
Article number05FM03
JournalJapanese Journal of Applied Physics
Volume55
Issue number5
DOIs
Publication statusPublished - 2016 May 1
Externally publishedYes

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ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Yakimov, E. B., Vergeles, P. S., Polyakov, A. Y., Lee, I-H., & Pearton, S. J. (2016). Radiation enhanced basal plane dislocation glide in GaN. Japanese Journal of Applied Physics, 55(5), [05FM03]. https://doi.org/10.7567/JJAP.55.05FM03