A study was performed on the junction formation behavior of boron-doped p-type Czochralski (Cz) and float zone (Fz) silicon (Si) wafers. The main difference between the Fz and Cz Si wafers was in the susceptibility of the proton track region to type conversion. The proton track region of the Fz Si wafer showed an increase in resistivity without any type conversion as the fluence increased upto 2×1015 cm-2.
ASJC Scopus subject areas
- Physics and Astronomy(all)