Radiation-induced junction formation behavior of boron-doped Czochralski and float zone silicon crystals under 3 MeV proton irradiation

M. D. Chun, D. Kim, J. Y. Huh

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A study was performed on the junction formation behavior of boron-doped p-type Czochralski (Cz) and float zone (Fz) silicon (Si) wafers. The main difference between the Fz and Cz Si wafers was in the susceptibility of the proton track region to type conversion. The proton track region of the Fz Si wafer showed an increase in resistivity without any type conversion as the fluence increased upto 2×1015 cm-2.

Original languageEnglish
Pages (from-to)5617-5622
Number of pages6
JournalJournal of Applied Physics
Volume94
Issue number9
DOIs
Publication statusPublished - 2003 Nov 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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