Radiation-resistance analysis of GaAs and InGaP sub cells for InGaP/GaAs/Ge 3-junction space solar cells

M. Yamaguchi, T. Sasaki, H. S. Lee, C. Morioka, N. J. Ekins-Daukes, M. Imaizumi, T. Takamoto, T. Ohshima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Recently, InGaP/GaAs/Ge 3-junction solar cells are widely used for space because of their higher conversion efficiency and better radiation-resistance compared to GaAs and Si solar cells. In this study, effects of base carrier concentration in GaAs and InGaP sub-cells upon their radiation resistance are analyzed by using radiative recombination lifetime and damage constant K for minority-carrier lifetime of GaAs and InGaP. In addition, analytical results are also compared with the experimental results of InGaP solar cells irradiated with 1-MeV electrons, 30-keV and 200-keV protons. In low irradiation fluence, n-on-p structure cells are found to be more radiation resistant than p-on-n structure cells. Better radiation-resistance of sub-cells can be realized by optimal design based on fundamental approach for radiative and non-radiative recombination properties of InGaP and radiation-resistance of InGaP/GaAs/Ge 3-junction cells will also be improved by optimal design of sub cells.

Original languageEnglish
Title of host publication33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
DOIs
Publication statusPublished - 2008
Externally publishedYes
Event33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA, United States
Duration: 2008 May 112008 May 16

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
CountryUnited States
CitySan Diego, CA
Period08/5/1108/5/16

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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    Yamaguchi, M., Sasaki, T., Lee, H. S., Morioka, C., Ekins-Daukes, N. J., Imaizumi, M., Takamoto, T., & Ohshima, T. (2008). Radiation-resistance analysis of GaAs and InGaP sub cells for InGaP/GaAs/Ge 3-junction space solar cells. In 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 [4922716] (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2008.4922716