Radiation resistance of wide band gap n+/p AlInGaP solar cell for high-efficient multijunction space solar cells

Haeseok Lee, Masafumi Yamaguchi, Nicholas J. Ekins-Daukes, Aurangzeb Khan, Tatsuya Takamoto, Mitsuru Imaizumi, Takeshi Ohshima, Hisayoshi Itoh

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The effects of 30 keV proton irradiation on n+/p AlInGaP solar cells are presented here. As the proton fluence increases to more than 1 × 1010 cm-2, the maximum power Pmax of the cell decreases markedly due to the introduction of defects by proton irradiation. From the changes in minority-carrier diffusion length determined by quantum efficiency modeling as a function of fluence, the damage constant KL for p-AlInGaP was estimated to be about 5.0 × 10-5. This value is comparable to that observed from 3 MeV proton-irradiated p-InGaP whereas it is lower than that observed from 3 MeV proton-irradiated p-InGaAsP and p-InGaAs cells. The maximum power recovery of the cell was observed by minority-carrier-injection-enhanced annealing (1 A/cm2), and the annealing activation energy for 30 keV proton-irradiation-induced defects in p-AlInGaP was determined as ΔE = 0.42 eV.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume46
Issue number25-28
DOIs
Publication statusPublished - 2007 Jul 13
Externally publishedYes

Keywords

  • AlInGaP
  • Damage constant
  • Irradiation-induced defects
  • Proton irradiation
  • Solar cells

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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