Raman scattering from CdSe/ZnSe self-assembled quantum dot structures

H. Rho, Howard E. Jackson, Sang Hoon Lee, M. Dobrowolska, J. K. Furdyna

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

We report Raman scattering from CdSe/ZnSe self-assembled quantum dot structures. A series of samples, each with a different growth-interruption time before ZnSe caping of the CdSe dots, is investigated. ZnSe longitudinal optical (LO) phonon shifts as a function of the interruption time show a complex pattern due to the evolution of CdSe dots. We observe an LO phonon from the CdSe dots at ∼221 cm-1 as well as an interface phonon at ∼245 cm-1. We present evidence that the interface phonon is localized at the interface between the CdSe dots and the ZnSe cap layer.

Original languageEnglish
Pages (from-to)15641-15644
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume61
Issue number23
Publication statusPublished - 2000 Dec 1
Externally publishedYes

Fingerprint

Semiconductor quantum dots
Raman scattering
interruption
quantum dots
Raman spectra
caps
shift

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Raman scattering from CdSe/ZnSe self-assembled quantum dot structures. / Rho, H.; Jackson, Howard E.; Lee, Sang Hoon; Dobrowolska, M.; Furdyna, J. K.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 61, No. 23, 01.12.2000, p. 15641-15644.

Research output: Contribution to journalArticle

Rho, H, Jackson, HE, Lee, SH, Dobrowolska, M & Furdyna, JK 2000, 'Raman scattering from CdSe/ZnSe self-assembled quantum dot structures', Physical Review B - Condensed Matter and Materials Physics, vol. 61, no. 23, pp. 15641-15644.
Rho, H. ; Jackson, Howard E. ; Lee, Sang Hoon ; Dobrowolska, M. ; Furdyna, J. K. / Raman scattering from CdSe/ZnSe self-assembled quantum dot structures. In: Physical Review B - Condensed Matter and Materials Physics. 2000 ; Vol. 61, No. 23. pp. 15641-15644.
@article{4c8e7c549a5745f2adb3fc02391e100c,
title = "Raman scattering from CdSe/ZnSe self-assembled quantum dot structures",
abstract = "We report Raman scattering from CdSe/ZnSe self-assembled quantum dot structures. A series of samples, each with a different growth-interruption time before ZnSe caping of the CdSe dots, is investigated. ZnSe longitudinal optical (LO) phonon shifts as a function of the interruption time show a complex pattern due to the evolution of CdSe dots. We observe an LO phonon from the CdSe dots at ∼221 cm-1 as well as an interface phonon at ∼245 cm-1. We present evidence that the interface phonon is localized at the interface between the CdSe dots and the ZnSe cap layer.",
author = "H. Rho and Jackson, {Howard E.} and Lee, {Sang Hoon} and M. Dobrowolska and Furdyna, {J. K.}",
year = "2000",
month = "12",
day = "1",
language = "English",
volume = "61",
pages = "15641--15644",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Institute of Physics Publising LLC",
number = "23",

}

TY - JOUR

T1 - Raman scattering from CdSe/ZnSe self-assembled quantum dot structures

AU - Rho, H.

AU - Jackson, Howard E.

AU - Lee, Sang Hoon

AU - Dobrowolska, M.

AU - Furdyna, J. K.

PY - 2000/12/1

Y1 - 2000/12/1

N2 - We report Raman scattering from CdSe/ZnSe self-assembled quantum dot structures. A series of samples, each with a different growth-interruption time before ZnSe caping of the CdSe dots, is investigated. ZnSe longitudinal optical (LO) phonon shifts as a function of the interruption time show a complex pattern due to the evolution of CdSe dots. We observe an LO phonon from the CdSe dots at ∼221 cm-1 as well as an interface phonon at ∼245 cm-1. We present evidence that the interface phonon is localized at the interface between the CdSe dots and the ZnSe cap layer.

AB - We report Raman scattering from CdSe/ZnSe self-assembled quantum dot structures. A series of samples, each with a different growth-interruption time before ZnSe caping of the CdSe dots, is investigated. ZnSe longitudinal optical (LO) phonon shifts as a function of the interruption time show a complex pattern due to the evolution of CdSe dots. We observe an LO phonon from the CdSe dots at ∼221 cm-1 as well as an interface phonon at ∼245 cm-1. We present evidence that the interface phonon is localized at the interface between the CdSe dots and the ZnSe cap layer.

UR - http://www.scopus.com/inward/record.url?scp=0000922517&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000922517&partnerID=8YFLogxK

M3 - Article

VL - 61

SP - 15641

EP - 15644

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 23

ER -