Raman scattering from CdSe/ZnSe self-assembled quantum dot structures

H. Rho, Howard E. Jackson, Sang Hoon Lee, M. Dobrowolska, J. K. Furdyna

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Abstract

We report Raman scattering from CdSe/ZnSe self-assembled quantum dot structures. A series of samples, each with a different growth-interruption time before ZnSe caping of the CdSe dots, is investigated. ZnSe longitudinal optical (LO) phonon shifts as a function of the interruption time show a complex pattern due to the evolution of CdSe dots. We observe an LO phonon from the CdSe dots at ∼221 cm-1 as well as an interface phonon at ∼245 cm-1. We present evidence that the interface phonon is localized at the interface between the CdSe dots and the ZnSe cap layer.

Original languageEnglish
Pages (from-to)15641-15644
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume61
Issue number23
Publication statusPublished - 2000 Dec 1
Externally publishedYes

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ASJC Scopus subject areas

  • Condensed Matter Physics

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