Raman scattering from CdSe/ZnSe self-assembled quantum dot structures

H. Rho, Howard E. Jackson, S. Lee, M. Dobrowolska, J. Furdyna

Research output: Contribution to journalArticle

40 Citations (Scopus)

Abstract

We report Raman scattering from CdSe/ZnSe self-assembled quantum dot structures. A series of samples, each with a different growth-interruption time before ZnSe caping of the CdSe dots, is investigated. ZnSe longitudinal optical (LO) phonon shifts as a function of the interruption time show a complex pattern due to the evolution of CdSe dots. We observe an LO phonon from the CdSe dots at (Formula presented) as well as an interface phonon at (Formula presented) We present evidence that the interface phonon is localized at the interface between the CdSe dots and the ZnSe cap layer.

Original languageEnglish
Pages (from-to)15641-15644
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume61
Issue number23
DOIs
Publication statusPublished - 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Raman scattering from CdSe/ZnSe self-assembled quantum dot structures'. Together they form a unique fingerprint.

  • Cite this