Raman scattering study of GaN films

Dimitry Kirillov, Heon Lee, James S. Harris

Research output: Contribution to journalArticle

49 Citations (Scopus)

Abstract

Raman spectra of GaN films grown by molecular-beam epitaxy and hydride vapor-phase epitaxy on GaAs and Al2O3 substrates have been studied. It was found that longitudinal phonon modes disappear from the spectra of n+ films due to screening by free carriers, but coupled plasmon phonon modes of the higher-energy branch are not observed because of strong damping of plasmons. Precise values for phonon frequencies and linewidths are presented. No differences in phonon frequencies for the films of different thicknesses grown on different substrates have been found which indicates that the strain due to lattice and thermal-expansion mismatch is relaxed by the formation of the dislocations very close to the substrate-film interface.

Original languageEnglish
Pages (from-to)4058-4062
Number of pages5
JournalJournal of Applied Physics
Volume80
Issue number7
Publication statusPublished - 1996 Oct 1
Externally publishedYes

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Raman spectra
plasmons
vapor phase epitaxy
hydrides
thermal expansion
molecular beam epitaxy
screening
damping
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Kirillov, D., Lee, H., & Harris, J. S. (1996). Raman scattering study of GaN films. Journal of Applied Physics, 80(7), 4058-4062.

Raman scattering study of GaN films. / Kirillov, Dimitry; Lee, Heon; Harris, James S.

In: Journal of Applied Physics, Vol. 80, No. 7, 01.10.1996, p. 4058-4062.

Research output: Contribution to journalArticle

Kirillov, D, Lee, H & Harris, JS 1996, 'Raman scattering study of GaN films', Journal of Applied Physics, vol. 80, no. 7, pp. 4058-4062.
Kirillov D, Lee H, Harris JS. Raman scattering study of GaN films. Journal of Applied Physics. 1996 Oct 1;80(7):4058-4062.
Kirillov, Dimitry ; Lee, Heon ; Harris, James S. / Raman scattering study of GaN films. In: Journal of Applied Physics. 1996 ; Vol. 80, No. 7. pp. 4058-4062.
@article{e04c088039f449818c15f6bd03793247,
title = "Raman scattering study of GaN films",
abstract = "Raman spectra of GaN films grown by molecular-beam epitaxy and hydride vapor-phase epitaxy on GaAs and Al2O3 substrates have been studied. It was found that longitudinal phonon modes disappear from the spectra of n+ films due to screening by free carriers, but coupled plasmon phonon modes of the higher-energy branch are not observed because of strong damping of plasmons. Precise values for phonon frequencies and linewidths are presented. No differences in phonon frequencies for the films of different thicknesses grown on different substrates have been found which indicates that the strain due to lattice and thermal-expansion mismatch is relaxed by the formation of the dislocations very close to the substrate-film interface.",
author = "Dimitry Kirillov and Heon Lee and Harris, {James S.}",
year = "1996",
month = "10",
day = "1",
language = "English",
volume = "80",
pages = "4058--4062",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - Raman scattering study of GaN films

AU - Kirillov, Dimitry

AU - Lee, Heon

AU - Harris, James S.

PY - 1996/10/1

Y1 - 1996/10/1

N2 - Raman spectra of GaN films grown by molecular-beam epitaxy and hydride vapor-phase epitaxy on GaAs and Al2O3 substrates have been studied. It was found that longitudinal phonon modes disappear from the spectra of n+ films due to screening by free carriers, but coupled plasmon phonon modes of the higher-energy branch are not observed because of strong damping of plasmons. Precise values for phonon frequencies and linewidths are presented. No differences in phonon frequencies for the films of different thicknesses grown on different substrates have been found which indicates that the strain due to lattice and thermal-expansion mismatch is relaxed by the formation of the dislocations very close to the substrate-film interface.

AB - Raman spectra of GaN films grown by molecular-beam epitaxy and hydride vapor-phase epitaxy on GaAs and Al2O3 substrates have been studied. It was found that longitudinal phonon modes disappear from the spectra of n+ films due to screening by free carriers, but coupled plasmon phonon modes of the higher-energy branch are not observed because of strong damping of plasmons. Precise values for phonon frequencies and linewidths are presented. No differences in phonon frequencies for the films of different thicknesses grown on different substrates have been found which indicates that the strain due to lattice and thermal-expansion mismatch is relaxed by the formation of the dislocations very close to the substrate-film interface.

UR - http://www.scopus.com/inward/record.url?scp=3743079802&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3743079802&partnerID=8YFLogxK

M3 - Article

VL - 80

SP - 4058

EP - 4062

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 7

ER -