Raman scattering study of GaN films

Dimitry Kirillov, Heon Lee, James S. Harris

Research output: Contribution to journalArticlepeer-review

53 Citations (Scopus)


Raman spectra of GaN films grown by molecular-beam epitaxy and hydride vapor-phase epitaxy on GaAs and Al2O3 substrates have been studied. It was found that longitudinal phonon modes disappear from the spectra of n+ films due to screening by free carriers, but coupled plasmon phonon modes of the higher-energy branch are not observed because of strong damping of plasmons. Precise values for phonon frequencies and linewidths are presented. No differences in phonon frequencies for the films of different thicknesses grown on different substrates have been found which indicates that the strain due to lattice and thermal-expansion mismatch is relaxed by the formation of the dislocations very close to the substrate-film interface.

Original languageEnglish
Pages (from-to)4058-4062
Number of pages5
JournalJournal of Applied Physics
Issue number7
Publication statusPublished - 1996 Oct 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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