Raman study of epitaxial lateral overgrowth of GaN on patterned sapphire substrate

D. H. Kang, J. C. Song, H. Song, D. W. Kim, In-Hwan Lee, K. Santhakumar, C. R. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Structural and optical properties of gallium nitride (GaN) epilayers grown on lens shape patterned sapphire substrate (PSS) using metalorganic chemical vapor deposition (MOCVD) for various growth times were evaluated. From Raman spectra, a blue shift and reduction in the FWHM of Raman modes of GaN grown on PSS were observed when compared to GaN grown on unpatterend sapphire substrate (UPSS). From the DCXRD spectra, full width at half maximum (FWHM) value was decreased with increasing growth time. FWHM of the sample grown at 80 min was 473.5 arc sec. This indicates that there is an improvement in crystalline quality of the GaN grown on PSS as the growth time increases. From photoluminescence (PL) spectra, an increase in band edge emission intensity and a decrease in defect related yellow luminescence were observed for GaN on PSS as the growth time increased.

Original languageEnglish
Title of host publicationSemiconductor Photonics
Subtitle of host publicationNano-Structured Materials and Devices
PublisherTrans Tech Publications
Pages111-113
Number of pages3
ISBN (Print)0878494715, 9780878494712
DOIs
Publication statusPublished - 2008 Jan 1
Externally publishedYes
EventInternational Conference on Materials for Advanced Technologies, ICMAT 2007 - , Singapore
Duration: 2007 Jul 12007 Jul 6

Publication series

NameAdvanced Materials Research
Volume31
ISSN (Print)1022-6680

Conference

ConferenceInternational Conference on Materials for Advanced Technologies, ICMAT 2007
CountrySingapore
Period07/7/107/7/6

Fingerprint

Gallium nitride
Sapphire
Full width at half maximum
Substrates
Epilayers
Metallorganic chemical vapor deposition
Raman scattering
Luminescence
Structural properties
Lenses
Photoluminescence
Optical properties
Crystalline materials
Defects

Keywords

  • GaN
  • Lateral growth
  • MOCVD threading dislocation
  • Patterned sapphire substrate

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Kang, D. H., Song, J. C., Song, H., Kim, D. W., Lee, I-H., Santhakumar, K., & Lee, C. R. (2008). Raman study of epitaxial lateral overgrowth of GaN on patterned sapphire substrate. In Semiconductor Photonics: Nano-Structured Materials and Devices (pp. 111-113). (Advanced Materials Research; Vol. 31). Trans Tech Publications. https://doi.org/10.4028/0-87849-471-5.111

Raman study of epitaxial lateral overgrowth of GaN on patterned sapphire substrate. / Kang, D. H.; Song, J. C.; Song, H.; Kim, D. W.; Lee, In-Hwan; Santhakumar, K.; Lee, C. R.

Semiconductor Photonics: Nano-Structured Materials and Devices. Trans Tech Publications, 2008. p. 111-113 (Advanced Materials Research; Vol. 31).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kang, DH, Song, JC, Song, H, Kim, DW, Lee, I-H, Santhakumar, K & Lee, CR 2008, Raman study of epitaxial lateral overgrowth of GaN on patterned sapphire substrate. in Semiconductor Photonics: Nano-Structured Materials and Devices. Advanced Materials Research, vol. 31, Trans Tech Publications, pp. 111-113, International Conference on Materials for Advanced Technologies, ICMAT 2007, Singapore, 07/7/1. https://doi.org/10.4028/0-87849-471-5.111
Kang DH, Song JC, Song H, Kim DW, Lee I-H, Santhakumar K et al. Raman study of epitaxial lateral overgrowth of GaN on patterned sapphire substrate. In Semiconductor Photonics: Nano-Structured Materials and Devices. Trans Tech Publications. 2008. p. 111-113. (Advanced Materials Research). https://doi.org/10.4028/0-87849-471-5.111
Kang, D. H. ; Song, J. C. ; Song, H. ; Kim, D. W. ; Lee, In-Hwan ; Santhakumar, K. ; Lee, C. R. / Raman study of epitaxial lateral overgrowth of GaN on patterned sapphire substrate. Semiconductor Photonics: Nano-Structured Materials and Devices. Trans Tech Publications, 2008. pp. 111-113 (Advanced Materials Research).
@inproceedings{021a94f924b946cc9a3ce0692f63d714,
title = "Raman study of epitaxial lateral overgrowth of GaN on patterned sapphire substrate",
abstract = "Structural and optical properties of gallium nitride (GaN) epilayers grown on lens shape patterned sapphire substrate (PSS) using metalorganic chemical vapor deposition (MOCVD) for various growth times were evaluated. From Raman spectra, a blue shift and reduction in the FWHM of Raman modes of GaN grown on PSS were observed when compared to GaN grown on unpatterend sapphire substrate (UPSS). From the DCXRD spectra, full width at half maximum (FWHM) value was decreased with increasing growth time. FWHM of the sample grown at 80 min was 473.5 arc sec. This indicates that there is an improvement in crystalline quality of the GaN grown on PSS as the growth time increases. From photoluminescence (PL) spectra, an increase in band edge emission intensity and a decrease in defect related yellow luminescence were observed for GaN on PSS as the growth time increased.",
keywords = "GaN, Lateral growth, MOCVD threading dislocation, Patterned sapphire substrate",
author = "Kang, {D. H.} and Song, {J. C.} and H. Song and Kim, {D. W.} and In-Hwan Lee and K. Santhakumar and Lee, {C. R.}",
year = "2008",
month = "1",
day = "1",
doi = "10.4028/0-87849-471-5.111",
language = "English",
isbn = "0878494715",
series = "Advanced Materials Research",
publisher = "Trans Tech Publications",
pages = "111--113",
booktitle = "Semiconductor Photonics",
address = "Germany",

}

TY - GEN

T1 - Raman study of epitaxial lateral overgrowth of GaN on patterned sapphire substrate

AU - Kang, D. H.

AU - Song, J. C.

AU - Song, H.

AU - Kim, D. W.

AU - Lee, In-Hwan

AU - Santhakumar, K.

AU - Lee, C. R.

PY - 2008/1/1

Y1 - 2008/1/1

N2 - Structural and optical properties of gallium nitride (GaN) epilayers grown on lens shape patterned sapphire substrate (PSS) using metalorganic chemical vapor deposition (MOCVD) for various growth times were evaluated. From Raman spectra, a blue shift and reduction in the FWHM of Raman modes of GaN grown on PSS were observed when compared to GaN grown on unpatterend sapphire substrate (UPSS). From the DCXRD spectra, full width at half maximum (FWHM) value was decreased with increasing growth time. FWHM of the sample grown at 80 min was 473.5 arc sec. This indicates that there is an improvement in crystalline quality of the GaN grown on PSS as the growth time increases. From photoluminescence (PL) spectra, an increase in band edge emission intensity and a decrease in defect related yellow luminescence were observed for GaN on PSS as the growth time increased.

AB - Structural and optical properties of gallium nitride (GaN) epilayers grown on lens shape patterned sapphire substrate (PSS) using metalorganic chemical vapor deposition (MOCVD) for various growth times were evaluated. From Raman spectra, a blue shift and reduction in the FWHM of Raman modes of GaN grown on PSS were observed when compared to GaN grown on unpatterend sapphire substrate (UPSS). From the DCXRD spectra, full width at half maximum (FWHM) value was decreased with increasing growth time. FWHM of the sample grown at 80 min was 473.5 arc sec. This indicates that there is an improvement in crystalline quality of the GaN grown on PSS as the growth time increases. From photoluminescence (PL) spectra, an increase in band edge emission intensity and a decrease in defect related yellow luminescence were observed for GaN on PSS as the growth time increased.

KW - GaN

KW - Lateral growth

KW - MOCVD threading dislocation

KW - Patterned sapphire substrate

UR - http://www.scopus.com/inward/record.url?scp=45749131083&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=45749131083&partnerID=8YFLogxK

U2 - 10.4028/0-87849-471-5.111

DO - 10.4028/0-87849-471-5.111

M3 - Conference contribution

AN - SCOPUS:45749131083

SN - 0878494715

SN - 9780878494712

T3 - Advanced Materials Research

SP - 111

EP - 113

BT - Semiconductor Photonics

PB - Trans Tech Publications

ER -