Raman study of epitaxial lateral overgrowth of GaN on patterned sapphire substrate

D. H. Kang, J. C. Song, H. Song, D. W. Kim, I. H. Lee, K. Santhakumar, C. R. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Structural and optical properties of gallium nitride (GaN) epilayers grown on lens shape patterned sapphire substrate (PSS) using metalorganic chemical vapor deposition (MOCVD) for various growth times were evaluated. From Raman spectra, a blue shift and reduction in the FWHM of Raman modes of GaN grown on PSS were observed when compared to GaN grown on unpatterend sapphire substrate (UPSS). From the DCXRD spectra, full width at half maximum (FWHM) value was decreased with increasing growth time. FWHM of the sample grown at 80 min was 473.5 arc sec. This indicates that there is an improvement in crystalline quality of the GaN grown on PSS as the growth time increases. From photoluminescence (PL) spectra, an increase in band edge emission intensity and a decrease in defect related yellow luminescence were observed for GaN on PSS as the growth time increased.

Original languageEnglish
Title of host publicationSemiconductor Photonics
Subtitle of host publicationNano-Structured Materials and Devices
PublisherTrans Tech Publications
Pages111-113
Number of pages3
ISBN (Print)0878494715, 9780878494712
DOIs
Publication statusPublished - 2008
Externally publishedYes
EventInternational Conference on Materials for Advanced Technologies, ICMAT 2007 - , Singapore
Duration: 2007 Jul 12007 Jul 6

Publication series

NameAdvanced Materials Research
Volume31
ISSN (Print)1022-6680

Conference

ConferenceInternational Conference on Materials for Advanced Technologies, ICMAT 2007
CountrySingapore
Period07/7/107/7/6

Keywords

  • GaN
  • Lateral growth
  • MOCVD threading dislocation
  • Patterned sapphire substrate

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Kang, D. H., Song, J. C., Song, H., Kim, D. W., Lee, I. H., Santhakumar, K., & Lee, C. R. (2008). Raman study of epitaxial lateral overgrowth of GaN on patterned sapphire substrate. In Semiconductor Photonics: Nano-Structured Materials and Devices (pp. 111-113). (Advanced Materials Research; Vol. 31). Trans Tech Publications. https://doi.org/10.4028/0-87849-471-5.111