Random Dopant Fluctuation-Induced Threshold Voltage Variation-Immune Ge FinFET with Metal-Interlayer-Semiconductor Source/Drain

Changho Shin, Jeong Kyu Kim, Gwang Sik Kim, Hyunjae Lee, Changhwan Shin, Jong-Kook Kim, Byung Jin Cho, Hyun-Yong Yu

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The impact of process-induced random dopant fluctuation (RDF)-induced threshold voltage (V-th) variation on the performance of 7-nm n-type germanium (Ge) FinFETs with and without a metal-interlayer-semiconductor (MIS) source/drain (S/D) structure is investigated using 3-D TCAD simulations. In order to reduce the RDF-induced Vth variation, an MIS S/D structure with a heavily doped n-type zinc oxide (ZnO) interlayer is used in the S/D region of the Ge FinFET. Thus, without performance degradation, the Ge FinFET with an MIS S/D structure achieves approximately threefold reduction in the RDF-induced Vth variation (versus without an MIS S/D structure). The impact of various fin parameters (i.e., fin height and fin width) on the RDF-induced Vth variation is also investigated. It is noteworthy that variation is suppressed as the fin height (fin width) increases (decreases).

Original languageEnglish
Article number7571111
Pages (from-to)4167-4172
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume63
Issue number11
DOIs
Publication statusPublished - 2016 Nov 1

Keywords

  • CMOS
  • FinFET
  • germanium
  • interlayer
  • random dopant fluctuation (RDF)
  • Threshold voltage variation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Random Dopant Fluctuation-Induced Threshold Voltage Variation-Immune Ge FinFET with Metal-Interlayer-Semiconductor Source/Drain'. Together they form a unique fingerprint.

  • Cite this