Rare-earth chloride seeded growth of GaN nano- and micro-crystals

M. A. Mastro, J. A. Freitas, R. T. Holm, C. R. Eddy, J. Caldwell, K. Liu, O. Glembocki, R. L. Henry, J. Kim

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

A novel rare-earth chloride seed was employed as a catalyst for growth of GaN nano- and micro-crystals on c-, a- and r-plane sapphire. The ErCl 3 seed on the substrate surface enhanced the growth rate and density of the GaN crystals. Distinctive green photoluminescence was measured, confirming that Er 3+ ions were active in the GaN matrix. This technique can be adapted to selectively grow GaN crystals with emission tailored to the particular optical transitions of the rare-earth seed.

Original languageEnglish
Pages (from-to)6157-6161
Number of pages5
JournalApplied Surface Science
Volume253
Issue number14
DOIs
Publication statusPublished - 2007 May 15

Keywords

  • Gallium nitride
  • Rare-earth metal

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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    Mastro, M. A., Freitas, J. A., Holm, R. T., Eddy, C. R., Caldwell, J., Liu, K., Glembocki, O., Henry, R. L., & Kim, J. (2007). Rare-earth chloride seeded growth of GaN nano- and micro-crystals. Applied Surface Science, 253(14), 6157-6161. https://doi.org/10.1016/j.apsusc.2007.01.073