Rashba effect induced magnetoresistance in an InAs heterostructure

Youn Ho Park, Hyun Cheol Koo, Joonyeon Chang, Suk Hee Han, Jonghwa Eom

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The Rashba field in a quantum channel produces spin splitting and population imbalance between spin-up and -down electrons. The channel resistance depends on the alignment between the applied field and the Rashba field because the applied magnetic field causes different mobilities for two types of spins. With an applied field of 2 T, the mobility difference between spin-up and -down electrons is 0.75%.

Original languageEnglish
Pages (from-to)8203-8206
Number of pages4
JournalThin Solid Films
Volume519
Issue number23
DOIs
Publication statusPublished - 2011 Sep 30
Externally publishedYes

Keywords

  • Magnetoresistance
  • Quantum well
  • Rashba effect
  • Spin filtering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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  • Cite this

    Park, Y. H., Koo, H. C., Chang, J., Han, S. H., & Eom, J. (2011). Rashba effect induced magnetoresistance in an InAs heterostructure. Thin Solid Films, 519(23), 8203-8206. https://doi.org/10.1016/j.tsf.2011.03.063