Reactivation of Mg acceptor in Mg-doped GaN by nitrogen plasma treatment

Sang Woo Kim, Ji Myon Lee, Chul Huh, Nae Man Park, Hyun Soo Kim, In-Hwan Lee, Seong Ju Park

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Abstract

Mg-doped GaN films, grown by metalorganic chemical vapor deposition, were treated with a nitrogen plasma after a conventional rapid thermal annealing (RTA). The conductivity of the p-type GaN film was greatly enhanced by nitrogen plasma treatment, and exhibited a higher sheet hole concentration as well as lower sheet resistance than the RTA samples. A photoluminescence (PL) band which peaked at 3.27 eV was new, and a band at 2.95 eV was markedly attenuated in the plasma treated samples. PL measurements suggest that self-compensation in a Mg-doped GaN caused by the nitrogen vacancies is effectively reduced by the nitrogen plasma treatment, leading to an enhanced p-type conductivity. In addition, the plasma-treated sample revealed a drastic reduction in specific contact resistance by three orders of magnitude, compared with the RTA samples.

Original languageEnglish
Pages (from-to)3079-3081
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number21
DOIs
Publication statusPublished - 2000 May 22
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, S. W., Lee, J. M., Huh, C., Park, N. M., Kim, H. S., Lee, I-H., & Park, S. J. (2000). Reactivation of Mg acceptor in Mg-doped GaN by nitrogen plasma treatment. Applied Physics Letters, 76(21), 3079-3081. https://doi.org/10.1063/1.126585