Reactivation of Mg acceptor in Mg-doped GaN by nitrogen plasma treatment

Sang Woo Kim, Ji Myon Lee, Chul Huh, Nae Man Park, Hyun Soo Kim, In-Hwan Lee, Seong Ju Park

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

Mg-doped GaN films, grown by metalorganic chemical vapor deposition, were treated with a nitrogen plasma after a conventional rapid thermal annealing (RTA). The conductivity of the p-type GaN film was greatly enhanced by nitrogen plasma treatment, and exhibited a higher sheet hole concentration as well as lower sheet resistance than the RTA samples. A photoluminescence (PL) band which peaked at 3.27 eV was new, and a band at 2.95 eV was markedly attenuated in the plasma treated samples. PL measurements suggest that self-compensation in a Mg-doped GaN caused by the nitrogen vacancies is effectively reduced by the nitrogen plasma treatment, leading to an enhanced p-type conductivity. In addition, the plasma-treated sample revealed a drastic reduction in specific contact resistance by three orders of magnitude, compared with the RTA samples.

Original languageEnglish
Pages (from-to)3079-3081
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number21
DOIs
Publication statusPublished - 2000 May 22
Externally publishedYes

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nitrogen plasma
annealing
photoluminescence
conductivity
contact resistance
metalorganic chemical vapor deposition
nitrogen

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, S. W., Lee, J. M., Huh, C., Park, N. M., Kim, H. S., Lee, I-H., & Park, S. J. (2000). Reactivation of Mg acceptor in Mg-doped GaN by nitrogen plasma treatment. Applied Physics Letters, 76(21), 3079-3081. https://doi.org/10.1063/1.126585

Reactivation of Mg acceptor in Mg-doped GaN by nitrogen plasma treatment. / Kim, Sang Woo; Lee, Ji Myon; Huh, Chul; Park, Nae Man; Kim, Hyun Soo; Lee, In-Hwan; Park, Seong Ju.

In: Applied Physics Letters, Vol. 76, No. 21, 22.05.2000, p. 3079-3081.

Research output: Contribution to journalArticle

Kim, SW, Lee, JM, Huh, C, Park, NM, Kim, HS, Lee, I-H & Park, SJ 2000, 'Reactivation of Mg acceptor in Mg-doped GaN by nitrogen plasma treatment', Applied Physics Letters, vol. 76, no. 21, pp. 3079-3081. https://doi.org/10.1063/1.126585
Kim, Sang Woo ; Lee, Ji Myon ; Huh, Chul ; Park, Nae Man ; Kim, Hyun Soo ; Lee, In-Hwan ; Park, Seong Ju. / Reactivation of Mg acceptor in Mg-doped GaN by nitrogen plasma treatment. In: Applied Physics Letters. 2000 ; Vol. 76, No. 21. pp. 3079-3081.
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