Reactive ion etching of gallium nitride films

Heon Lee, David B. Oberman, James S. Harris

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Reactive ion etching (RIE) was performed on gallium nitride (GaN) films grown by electron cyclotron resonance (ECR) plasma assisted molecular beam epitaxy (MBE). Etching was carried out using trifluoromethane (CHF 3) and chloropentafluoroethane (C 9ClF 5) plasmas with Ar gas. A conventional rf plasma discharge RIE system without ECR or Ar ion gun was used. The effects of chamber pressure, plasma power, and gas flow rate on the etch rates were investigated. The etch rate increased linearly with the ratio of plasma power to chamber pressure. The etching rate varied between 60 and 500Å/min, with plasma power of 100 to 500W, chamber pressure of 60 to 300 mTorr, and gas flow rate of 20 to 50 sccm. Single crystalline GaN films on sapphire showed a slightly lower etch rate than domain-structured GaN films on GaAs. The surface morphology quality after etching was examined by atomic force microscopy and scanning electron microscopy.

Original languageEnglish
Pages (from-to)835-837
Number of pages3
JournalJournal of Electronic Materials
Volume25
Issue number5
Publication statusPublished - 1996 May 1
Externally publishedYes

Fingerprint

Gallium nitride
gallium nitrides
Reactive ion etching
pressure chambers
etching
Plasmas
Etching
Electron cyclotron resonance
electron cyclotron resonance
ions
gas flow
Flow of gases
flow velocity
Flow rate
Plasma Gases
plasma pressure
Aluminum Oxide
Ion sources
Molecular beam epitaxy
plasma jets

Keywords

  • Chloropentafluoroethane (C ClF )
  • Gallium nitride (GaN)
  • Reactive ion etching (RIE)
  • Trifluoromethane (CHF )

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)

Cite this

Lee, H., Oberman, D. B., & Harris, J. S. (1996). Reactive ion etching of gallium nitride films. Journal of Electronic Materials, 25(5), 835-837.

Reactive ion etching of gallium nitride films. / Lee, Heon; Oberman, David B.; Harris, James S.

In: Journal of Electronic Materials, Vol. 25, No. 5, 01.05.1996, p. 835-837.

Research output: Contribution to journalArticle

Lee, H, Oberman, DB & Harris, JS 1996, 'Reactive ion etching of gallium nitride films', Journal of Electronic Materials, vol. 25, no. 5, pp. 835-837.
Lee H, Oberman DB, Harris JS. Reactive ion etching of gallium nitride films. Journal of Electronic Materials. 1996 May 1;25(5):835-837.
Lee, Heon ; Oberman, David B. ; Harris, James S. / Reactive ion etching of gallium nitride films. In: Journal of Electronic Materials. 1996 ; Vol. 25, No. 5. pp. 835-837.
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