Abstract
Efficiency and lifetime of GaN based light emitting diodes and laser diodes can be improved by proper choice of substrate or deliberate modification of the substrate surface before deposition. Buffer growth or nitridation is the usual choices of surface modifications for GaN deposition to improve crystal quality and optical properties. It was our intention to study a possibility that a reactive ion beam (RIB) pretreatment of the sapphire substrate at room temperature could substitute the nitridation process at high temperature above 1000°C. The optical property of GaN films deposited on the sapphire surfaces pretreated by the reactive ion beam has improved significantly. Current observations clearly demonstrates that the RIB pretreatment of the sapphire surface can be used to improve the GaN films grown by metal-organic chemical vapor deposition (MOCVD).
| Original language | English |
|---|---|
| Pages (from-to) | 151-153 |
| Number of pages | 3 |
| Journal | Thin Solid Films |
| Volume | 326 |
| Issue number | 1-2 |
| Publication status | Published - 1998 Aug 4 |
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Keywords
- Atomic force microscopy
- Chemical vapor deposition
- Gallium nitride
- Reactive ion beam
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Condensed Matter Physics
- Surfaces and Interfaces
Cite this
Reactive ion (N2 +) beam pretreatment of sapphire for GaN growth. / Byun, Dong Jin; Jeong, Jaesik; Kim, Hyun Jeong; Koh, Seok Keun; Choi, Won Kook; Park, Dalkeun; Kum, Dong Wha.
In: Thin Solid Films, Vol. 326, No. 1-2, 04.08.1998, p. 151-153.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Reactive ion (N2 +) beam pretreatment of sapphire for GaN growth
AU - Byun, Dong Jin
AU - Jeong, Jaesik
AU - Kim, Hyun Jeong
AU - Koh, Seok Keun
AU - Choi, Won Kook
AU - Park, Dalkeun
AU - Kum, Dong Wha
PY - 1998/8/4
Y1 - 1998/8/4
N2 - Efficiency and lifetime of GaN based light emitting diodes and laser diodes can be improved by proper choice of substrate or deliberate modification of the substrate surface before deposition. Buffer growth or nitridation is the usual choices of surface modifications for GaN deposition to improve crystal quality and optical properties. It was our intention to study a possibility that a reactive ion beam (RIB) pretreatment of the sapphire substrate at room temperature could substitute the nitridation process at high temperature above 1000°C. The optical property of GaN films deposited on the sapphire surfaces pretreated by the reactive ion beam has improved significantly. Current observations clearly demonstrates that the RIB pretreatment of the sapphire surface can be used to improve the GaN films grown by metal-organic chemical vapor deposition (MOCVD).
AB - Efficiency and lifetime of GaN based light emitting diodes and laser diodes can be improved by proper choice of substrate or deliberate modification of the substrate surface before deposition. Buffer growth or nitridation is the usual choices of surface modifications for GaN deposition to improve crystal quality and optical properties. It was our intention to study a possibility that a reactive ion beam (RIB) pretreatment of the sapphire substrate at room temperature could substitute the nitridation process at high temperature above 1000°C. The optical property of GaN films deposited on the sapphire surfaces pretreated by the reactive ion beam has improved significantly. Current observations clearly demonstrates that the RIB pretreatment of the sapphire surface can be used to improve the GaN films grown by metal-organic chemical vapor deposition (MOCVD).
KW - Atomic force microscopy
KW - Chemical vapor deposition
KW - Gallium nitride
KW - Reactive ion beam
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M3 - Article
AN - SCOPUS:0032482846
VL - 326
SP - 151
EP - 153
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1-2
ER -