Reactive ion (N2 +) beam pretreatment of sapphire for GaN growth

Dong Jin Byun, Jaesik Jeong, Hyun Jeong Kim, Seok Keun Koh, Won Kook Choi, Dalkeun Park, Dong Wha Kum

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Efficiency and lifetime of GaN based light emitting diodes and laser diodes can be improved by proper choice of substrate or deliberate modification of the substrate surface before deposition. Buffer growth or nitridation is the usual choices of surface modifications for GaN deposition to improve crystal quality and optical properties. It was our intention to study a possibility that a reactive ion beam (RIB) pretreatment of the sapphire substrate at room temperature could substitute the nitridation process at high temperature above 1000°C. The optical property of GaN films deposited on the sapphire surfaces pretreated by the reactive ion beam has improved significantly. Current observations clearly demonstrates that the RIB pretreatment of the sapphire surface can be used to improve the GaN films grown by metal-organic chemical vapor deposition (MOCVD).

Original languageEnglish
Pages (from-to)151-153
Number of pages3
JournalThin Solid Films
Volume326
Issue number1-2
Publication statusPublished - 1998 Aug 4

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Keywords

  • Atomic force microscopy
  • Chemical vapor deposition
  • Gallium nitride
  • Reactive ion beam

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Byun, D. J., Jeong, J., Kim, H. J., Koh, S. K., Choi, W. K., Park, D., & Kum, D. W. (1998). Reactive ion (N2 +) beam pretreatment of sapphire for GaN growth. Thin Solid Films, 326(1-2), 151-153.