Realization of one-diode-type resistive-switching memory with Cr-SrTiO 3 film

Min Yeong Song, Yujeong Seo, Yeon Soo Kim, Hee Dong Kim, Ho Myoung An, Bae Ho Park, Yun Mo Sung, Tae Geun Kim

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The authors report a silicon-based one-diode-type resistive-switching memory (RRAM) device with self-rectifying properties and high electrical properties. The RRAM cell consisted of Al/Cr-SrTiO 3/Si and revealed intrinsic diode properties, so that unwanted sneaky currents could be removed from an RRAM crossbar array without extra switching devices. The insulator-metal transition property of the proposed device was explained using the space-charge-limited conduction mechanism. The memory device showed good characteristics including high ON/OFF ratio (~10 6), low reset current (~10 -11 A), high speed at low voltage (200 ns, 2 V), and reasonable endurance (>10 4 cycles) and retention characteristics (>10 4 s).

Original languageEnglish
Article number091202
JournalApplied Physics Express
Volume5
Issue number9
DOIs
Publication statusPublished - 2012 Sep 1

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Diodes
diodes
Data storage equipment
Metal insulator transition
Electric space charge
endurance
Electric properties
Durability
low voltage
space charge
Silicon
transition metals
electrical properties
high speed
insulators
Electric potential
conduction
cycles
RRAM
silicon

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Realization of one-diode-type resistive-switching memory with Cr-SrTiO 3 film. / Song, Min Yeong; Seo, Yujeong; Kim, Yeon Soo; Kim, Hee Dong; An, Ho Myoung; Park, Bae Ho; Sung, Yun Mo; Kim, Tae Geun.

In: Applied Physics Express, Vol. 5, No. 9, 091202, 01.09.2012.

Research output: Contribution to journalArticle

Song, Min Yeong ; Seo, Yujeong ; Kim, Yeon Soo ; Kim, Hee Dong ; An, Ho Myoung ; Park, Bae Ho ; Sung, Yun Mo ; Kim, Tae Geun. / Realization of one-diode-type resistive-switching memory with Cr-SrTiO 3 film. In: Applied Physics Express. 2012 ; Vol. 5, No. 9.
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