Inversion behaviour has been demonstrated in gate-controlled p-GaN diodes using both MgO and Sc2O3 gate dielectrics and implanted n+ regions to provide a source of inversion charge. The total surface state density was estimated from capactance-voltage or charge pumping measurements to be in the range 3-8 × 1012 cm-2 after the implant activation annealing to form the source and drain regions. In addition, Mn doping of GaN during growth by molecular beam epitaxy is found to produce room temperature ferromagnetism under conditions where the material remains single-phase. The layers can be used as injectors of spin-polarised carriers into light-emitting diode structures, with the potential for creating polarised optical output.
|Number of pages||6|
|Publication status||Published - 2002 Dec 1|
- Gate dielectrics
- Magnetic semiconductors
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics