Recent advances in gate dielectrics and polarised light emission from GaN

S. J. Pearton, C. R. Abernathy, B. P. Gila, A. H. Onstine, M. E. Overberg, G. T. Thaler, Jihyun Kim, B. Luo, R. Mehandru, F. Ren, Y. D. Park

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Inversion behaviour has been demonstrated in gate-controlled p-GaN diodes using both MgO and Sc2O3 gate dielectrics and implanted n+ regions to provide a source of inversion charge. The total surface state density was estimated from capactance-voltage or charge pumping measurements to be in the range 3-8 × 1012 cm-2 after the implant activation annealing to form the source and drain regions. In addition, Mn doping of GaN during growth by molecular beam epitaxy is found to produce room temperature ferromagnetism under conditions where the material remains single-phase. The layers can be used as injectors of spin-polarised carriers into light-emitting diode structures, with the potential for creating polarised optical output.

Original languageEnglish
Pages (from-to)231-236
Number of pages6
JournalOpto-electronics Review
Volume10
Issue number4
Publication statusPublished - 2002
Externally publishedYes

Keywords

  • GaN
  • Gate dielectrics
  • Magnetic semiconductors

ASJC Scopus subject areas

  • Radiation
  • Materials Science(all)
  • Electrical and Electronic Engineering

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    Pearton, S. J., Abernathy, C. R., Gila, B. P., Onstine, A. H., Overberg, M. E., Thaler, G. T., Kim, J., Luo, B., Mehandru, R., Ren, F., & Park, Y. D. (2002). Recent advances in gate dielectrics and polarised light emission from GaN. Opto-electronics Review, 10(4), 231-236.