Abstract
The recombination activity of threading dislocations in n-GaN with different dislocation densities and different doping levels was studied using electron beam induced current (EBIC). The recombination velocity on a dislocation, also known as the dislocation recombination strength, was calculated. The results suggest that dislocations in n-GaN giving contrast in EBIC are charged and surrounded by a space charge region, as evidenced by the observed dependence of dislocation recombination strength on dopant concentration. For moderate (below ∼108 cm-2) dislocation densities, these defects do not primarily determine the average diffusion length of nonequilibrium charge carriers, although locally, dislocations are efficient recombination sites. In general, it is observed that the effect of the growth method [standard metalorganic chemical vapor deposition (MOCVD), epitaxial lateral overgrowth versions of MOCVD, and hydride vapor phase epitaxy] on the recombination activity of dislocations is not very pronounced, although the average diffusion lengths can widely differ for various samples. The glide of basal plane dislocations at room temperature promoted by low energy electron irradiation does not significantly change the recombination properties of dislocations.
| Original language | English |
|---|---|
| Article number | 161543 |
| Journal | Journal of Applied Physics |
| Volume | 123 |
| Issue number | 16 |
| DOIs | |
| Publication status | Published - 2018 Apr 28 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
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Recombination properties of dislocations in GaN. / Yakimov, Eugene B.; Polyakov, Alexander Y.; Lee, In-Hwan; Pearton, Stephen J.
In: Journal of Applied Physics, Vol. 123, No. 16, 161543, 28.04.2018.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Recombination properties of dislocations in GaN
AU - Yakimov, Eugene B.
AU - Polyakov, Alexander Y.
AU - Lee, In-Hwan
AU - Pearton, Stephen J.
PY - 2018/4/28
Y1 - 2018/4/28
N2 - The recombination activity of threading dislocations in n-GaN with different dislocation densities and different doping levels was studied using electron beam induced current (EBIC). The recombination velocity on a dislocation, also known as the dislocation recombination strength, was calculated. The results suggest that dislocations in n-GaN giving contrast in EBIC are charged and surrounded by a space charge region, as evidenced by the observed dependence of dislocation recombination strength on dopant concentration. For moderate (below ∼108 cm-2) dislocation densities, these defects do not primarily determine the average diffusion length of nonequilibrium charge carriers, although locally, dislocations are efficient recombination sites. In general, it is observed that the effect of the growth method [standard metalorganic chemical vapor deposition (MOCVD), epitaxial lateral overgrowth versions of MOCVD, and hydride vapor phase epitaxy] on the recombination activity of dislocations is not very pronounced, although the average diffusion lengths can widely differ for various samples. The glide of basal plane dislocations at room temperature promoted by low energy electron irradiation does not significantly change the recombination properties of dislocations.
AB - The recombination activity of threading dislocations in n-GaN with different dislocation densities and different doping levels was studied using electron beam induced current (EBIC). The recombination velocity on a dislocation, also known as the dislocation recombination strength, was calculated. The results suggest that dislocations in n-GaN giving contrast in EBIC are charged and surrounded by a space charge region, as evidenced by the observed dependence of dislocation recombination strength on dopant concentration. For moderate (below ∼108 cm-2) dislocation densities, these defects do not primarily determine the average diffusion length of nonequilibrium charge carriers, although locally, dislocations are efficient recombination sites. In general, it is observed that the effect of the growth method [standard metalorganic chemical vapor deposition (MOCVD), epitaxial lateral overgrowth versions of MOCVD, and hydride vapor phase epitaxy] on the recombination activity of dislocations is not very pronounced, although the average diffusion lengths can widely differ for various samples. The glide of basal plane dislocations at room temperature promoted by low energy electron irradiation does not significantly change the recombination properties of dislocations.
UR - http://www.scopus.com/inward/record.url?scp=85038417834&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85038417834&partnerID=8YFLogxK
U2 - 10.1063/1.4995580
DO - 10.1063/1.4995580
M3 - Article
AN - SCOPUS:85038417834
VL - 123
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 16
M1 - 161543
ER -