Recombination properties of dislocations in GaN

Eugene B. Yakimov, Alexander Y. Polyakov, In-Hwan Lee, Stephen J. Pearton

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The recombination activity of threading dislocations in n-GaN with different dislocation densities and different doping levels was studied using electron beam induced current (EBIC). The recombination velocity on a dislocation, also known as the dislocation recombination strength, was calculated. The results suggest that dislocations in n-GaN giving contrast in EBIC are charged and surrounded by a space charge region, as evidenced by the observed dependence of dislocation recombination strength on dopant concentration. For moderate (below ∼108 cm-2) dislocation densities, these defects do not primarily determine the average diffusion length of nonequilibrium charge carriers, although locally, dislocations are efficient recombination sites. In general, it is observed that the effect of the growth method [standard metalorganic chemical vapor deposition (MOCVD), epitaxial lateral overgrowth versions of MOCVD, and hydride vapor phase epitaxy] on the recombination activity of dislocations is not very pronounced, although the average diffusion lengths can widely differ for various samples. The glide of basal plane dislocations at room temperature promoted by low energy electron irradiation does not significantly change the recombination properties of dislocations.

Original languageEnglish
Article number161543
JournalJournal of Applied Physics
Volume123
Issue number16
DOIs
Publication statusPublished - 2018 Apr 28

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diffusion length
metalorganic chemical vapor deposition
electron beams
electron irradiation
vapor phase epitaxy
hydrides
charge carriers
space charge
defects
room temperature
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Yakimov, E. B., Polyakov, A. Y., Lee, I-H., & Pearton, S. J. (2018). Recombination properties of dislocations in GaN. Journal of Applied Physics, 123(16), [161543]. https://doi.org/10.1063/1.4995580

Recombination properties of dislocations in GaN. / Yakimov, Eugene B.; Polyakov, Alexander Y.; Lee, In-Hwan; Pearton, Stephen J.

In: Journal of Applied Physics, Vol. 123, No. 16, 161543, 28.04.2018.

Research output: Contribution to journalArticle

Yakimov, EB, Polyakov, AY, Lee, I-H & Pearton, SJ 2018, 'Recombination properties of dislocations in GaN', Journal of Applied Physics, vol. 123, no. 16, 161543. https://doi.org/10.1063/1.4995580
Yakimov, Eugene B. ; Polyakov, Alexander Y. ; Lee, In-Hwan ; Pearton, Stephen J. / Recombination properties of dislocations in GaN. In: Journal of Applied Physics. 2018 ; Vol. 123, No. 16.
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