Reconfigurable transistors merge unipolar p- and n-type characteristics of field-effect transistors into a single programmable device. Combinational circuits have shown benefits in area and power consumption by fine-grain reconfiguration of complete logic blocks at runtime. To complement this volatile programming technology, a proof of concept for individually addressable reconfigurable nonvolatile transistors is presented. A charge-trapping stack is incorporated, and four distinct and stable states in a single device are demonstrated.
- Schottky barrier
- intrinsic silicon nanowires
- nonvolatile transistors
- reconfigurable field effect transistors
- reconfigurable memory
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials