Reconfigurable Si Nanowire Nonvolatile Transistors

So Jeong Park, Dae Young Jeon, Sabrina Piontek, Matthias Grube, Johannes Ocker, Violetta Sessi, André Heinzig, Jens Trommer, Gyu-Tae Kim, Thomas Mikolajick, Walter M. Weber

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Reconfigurable transistors merge unipolar p- and n-type characteristics of field-effect transistors into a single programmable device. Combinational circuits have shown benefits in area and power consumption by fine-grain reconfiguration of complete logic blocks at runtime. To complement this volatile programming technology, a proof of concept for individually addressable reconfigurable nonvolatile transistors is presented. A charge-trapping stack is incorporated, and four distinct and stable states in a single device are demonstrated.

Original languageEnglish
Article number1700399
JournalAdvanced Electronic Materials
Volume4
Issue number1
DOIs
Publication statusPublished - 2018 Jan 1

Keywords

  • intrinsic silicon nanowires
  • nonvolatile transistors
  • reconfigurable field effect transistors
  • reconfigurable memory
  • Schottky barrier

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Park, S. J., Jeon, D. Y., Piontek, S., Grube, M., Ocker, J., Sessi, V., Heinzig, A., Trommer, J., Kim, G-T., Mikolajick, T., & Weber, W. M. (2018). Reconfigurable Si Nanowire Nonvolatile Transistors. Advanced Electronic Materials, 4(1), [1700399]. https://doi.org/10.1002/aelm.201700399