Reconfigurable Si Nanowire Nonvolatile Transistors

So Jeong Park, Dae Young Jeon, Sabrina Piontek, Matthias Grube, Johannes Ocker, Violetta Sessi, André Heinzig, Jens Trommer, Gyu-Tae Kim, Thomas Mikolajick, Walter M. Weber

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Reconfigurable transistors merge unipolar p- and n-type characteristics of field-effect transistors into a single programmable device. Combinational circuits have shown benefits in area and power consumption by fine-grain reconfiguration of complete logic blocks at runtime. To complement this volatile programming technology, a proof of concept for individually addressable reconfigurable nonvolatile transistors is presented. A charge-trapping stack is incorporated, and four distinct and stable states in a single device are demonstrated.

Original languageEnglish
Article number1700399
JournalAdvanced Electronic Materials
Volume4
Issue number1
DOIs
Publication statusPublished - 2018 Jan 1

Fingerprint

Nanowires
Transistors
Combinatorial circuits
Charge trapping
Field effect transistors
Electric power utilization

Keywords

  • intrinsic silicon nanowires
  • nonvolatile transistors
  • reconfigurable field effect transistors
  • reconfigurable memory
  • Schottky barrier

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Park, S. J., Jeon, D. Y., Piontek, S., Grube, M., Ocker, J., Sessi, V., ... Weber, W. M. (2018). Reconfigurable Si Nanowire Nonvolatile Transistors. Advanced Electronic Materials, 4(1), [1700399]. https://doi.org/10.1002/aelm.201700399

Reconfigurable Si Nanowire Nonvolatile Transistors. / Park, So Jeong; Jeon, Dae Young; Piontek, Sabrina; Grube, Matthias; Ocker, Johannes; Sessi, Violetta; Heinzig, André; Trommer, Jens; Kim, Gyu-Tae; Mikolajick, Thomas; Weber, Walter M.

In: Advanced Electronic Materials, Vol. 4, No. 1, 1700399, 01.01.2018.

Research output: Contribution to journalArticle

Park, SJ, Jeon, DY, Piontek, S, Grube, M, Ocker, J, Sessi, V, Heinzig, A, Trommer, J, Kim, G-T, Mikolajick, T & Weber, WM 2018, 'Reconfigurable Si Nanowire Nonvolatile Transistors', Advanced Electronic Materials, vol. 4, no. 1, 1700399. https://doi.org/10.1002/aelm.201700399
Park SJ, Jeon DY, Piontek S, Grube M, Ocker J, Sessi V et al. Reconfigurable Si Nanowire Nonvolatile Transistors. Advanced Electronic Materials. 2018 Jan 1;4(1). 1700399. https://doi.org/10.1002/aelm.201700399
Park, So Jeong ; Jeon, Dae Young ; Piontek, Sabrina ; Grube, Matthias ; Ocker, Johannes ; Sessi, Violetta ; Heinzig, André ; Trommer, Jens ; Kim, Gyu-Tae ; Mikolajick, Thomas ; Weber, Walter M. / Reconfigurable Si Nanowire Nonvolatile Transistors. In: Advanced Electronic Materials. 2018 ; Vol. 4, No. 1.
@article{e2273230872a4bd28556080d2122c6c0,
title = "Reconfigurable Si Nanowire Nonvolatile Transistors",
abstract = "Reconfigurable transistors merge unipolar p- and n-type characteristics of field-effect transistors into a single programmable device. Combinational circuits have shown benefits in area and power consumption by fine-grain reconfiguration of complete logic blocks at runtime. To complement this volatile programming technology, a proof of concept for individually addressable reconfigurable nonvolatile transistors is presented. A charge-trapping stack is incorporated, and four distinct and stable states in a single device are demonstrated.",
keywords = "intrinsic silicon nanowires, nonvolatile transistors, reconfigurable field effect transistors, reconfigurable memory, Schottky barrier",
author = "Park, {So Jeong} and Jeon, {Dae Young} and Sabrina Piontek and Matthias Grube and Johannes Ocker and Violetta Sessi and Andr{\'e} Heinzig and Jens Trommer and Gyu-Tae Kim and Thomas Mikolajick and Weber, {Walter M.}",
year = "2018",
month = "1",
day = "1",
doi = "10.1002/aelm.201700399",
language = "English",
volume = "4",
journal = "Advanced Electronic Materials",
issn = "2199-160X",
publisher = "Wiley-VCH Verlag",
number = "1",

}

TY - JOUR

T1 - Reconfigurable Si Nanowire Nonvolatile Transistors

AU - Park, So Jeong

AU - Jeon, Dae Young

AU - Piontek, Sabrina

AU - Grube, Matthias

AU - Ocker, Johannes

AU - Sessi, Violetta

AU - Heinzig, André

AU - Trommer, Jens

AU - Kim, Gyu-Tae

AU - Mikolajick, Thomas

AU - Weber, Walter M.

PY - 2018/1/1

Y1 - 2018/1/1

N2 - Reconfigurable transistors merge unipolar p- and n-type characteristics of field-effect transistors into a single programmable device. Combinational circuits have shown benefits in area and power consumption by fine-grain reconfiguration of complete logic blocks at runtime. To complement this volatile programming technology, a proof of concept for individually addressable reconfigurable nonvolatile transistors is presented. A charge-trapping stack is incorporated, and four distinct and stable states in a single device are demonstrated.

AB - Reconfigurable transistors merge unipolar p- and n-type characteristics of field-effect transistors into a single programmable device. Combinational circuits have shown benefits in area and power consumption by fine-grain reconfiguration of complete logic blocks at runtime. To complement this volatile programming technology, a proof of concept for individually addressable reconfigurable nonvolatile transistors is presented. A charge-trapping stack is incorporated, and four distinct and stable states in a single device are demonstrated.

KW - intrinsic silicon nanowires

KW - nonvolatile transistors

KW - reconfigurable field effect transistors

KW - reconfigurable memory

KW - Schottky barrier

UR - http://www.scopus.com/inward/record.url?scp=85038089904&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85038089904&partnerID=8YFLogxK

U2 - 10.1002/aelm.201700399

DO - 10.1002/aelm.201700399

M3 - Article

AN - SCOPUS:85038089904

VL - 4

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

SN - 2199-160X

IS - 1

M1 - 1700399

ER -