Abstract
A reconfigurable spin logic device is realized using an asymmetric quantum well displaying strong Rashba spin splitting. This design is developed to remove the inefficient spin injection process and to utilize the Rashba-effect-induced electrochemical potential shifts. In this logic device, two ferromagnetic electrodes were deposited on two quantum well channels, respectively. The magnetization orientations of the ferromagnetic electrodes determine the function of the logic operation, and the polarity of the charge current is assigned to the logic input. The output voltage corresponds to the difference between potentials of the two ferromagnetic terminals, which read the electrochemical potentials of the individual quantum well channels. The detected signal induced by the Rashba channel is observed to be two orders of magnitude greater than the spin injection signal from the ferromagnetic source into the semiconductor channel. Four logic functions, i.e., the AND, OR, NAND, and NOR operations, are illustrated for a single device up to room temperature.
| Original language | English |
|---|---|
| Article number | 152403 |
| Journal | Applied Physics Letters |
| Volume | 114 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - 2019 Apr 15 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Reconfigurable spin logic device using electrochemical potentials. / Lee, Joo Hyeon; Hong, Seokmin; Kim, Hyung Jun; Chang, Joonyeon; Koo, Hyun Cheol.
In: Applied Physics Letters, Vol. 114, No. 15, 152403, 15.04.2019.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Reconfigurable spin logic device using electrochemical potentials
AU - Lee, Joo Hyeon
AU - Hong, Seokmin
AU - Kim, Hyung Jun
AU - Chang, Joonyeon
AU - Koo, Hyun Cheol
PY - 2019/4/15
Y1 - 2019/4/15
N2 - A reconfigurable spin logic device is realized using an asymmetric quantum well displaying strong Rashba spin splitting. This design is developed to remove the inefficient spin injection process and to utilize the Rashba-effect-induced electrochemical potential shifts. In this logic device, two ferromagnetic electrodes were deposited on two quantum well channels, respectively. The magnetization orientations of the ferromagnetic electrodes determine the function of the logic operation, and the polarity of the charge current is assigned to the logic input. The output voltage corresponds to the difference between potentials of the two ferromagnetic terminals, which read the electrochemical potentials of the individual quantum well channels. The detected signal induced by the Rashba channel is observed to be two orders of magnitude greater than the spin injection signal from the ferromagnetic source into the semiconductor channel. Four logic functions, i.e., the AND, OR, NAND, and NOR operations, are illustrated for a single device up to room temperature.
AB - A reconfigurable spin logic device is realized using an asymmetric quantum well displaying strong Rashba spin splitting. This design is developed to remove the inefficient spin injection process and to utilize the Rashba-effect-induced electrochemical potential shifts. In this logic device, two ferromagnetic electrodes were deposited on two quantum well channels, respectively. The magnetization orientations of the ferromagnetic electrodes determine the function of the logic operation, and the polarity of the charge current is assigned to the logic input. The output voltage corresponds to the difference between potentials of the two ferromagnetic terminals, which read the electrochemical potentials of the individual quantum well channels. The detected signal induced by the Rashba channel is observed to be two orders of magnitude greater than the spin injection signal from the ferromagnetic source into the semiconductor channel. Four logic functions, i.e., the AND, OR, NAND, and NOR operations, are illustrated for a single device up to room temperature.
UR - http://www.scopus.com/inward/record.url?scp=85065611546&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85065611546&partnerID=8YFLogxK
U2 - 10.1063/1.5089274
DO - 10.1063/1.5089274
M3 - Article
AN - SCOPUS:85065611546
VL - 114
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 15
M1 - 152403
ER -