Record efficiency on large area p-type czochralski silicon substrates

Brett Hallam, Stuart Wenham, Haeseok Lee, Eunjoo Lee, Hyunwoo Lee, Jisun Kim, Jeongeun Shin, Kyeongyeon Cho, Jisoo Kim

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7 Citations (Scopus)

Abstract

In this work we report a world record independently confirmed efficiency of 19.4% for a large area p-type Czochralski grown solar cell fabricated with a full area aluminium back surface field. This is achieved using the laser doped selective emitter solar cell technology on an industrial screen print production line with the addition of laser doping and light induced plating equipment. The use of a modified diffusion process is explored in which the emitter is diffused to a sheet resistance of 90Ω/□ and subsequent etch back of the emitter to 120Ω/□. This results in a lower surface concentration of phosphorus compared to that of emitters diffused directly to 120Ω/□. This modified diffusion process subsequently reduces the conductivity of the surface in relation to that of the heavily diffused laser doped contacts and avoids parasitic plating, resulting an average absolute increase in efficiency of 0.4% compared to cells fabricated without an emitter etch back process.

Original languageEnglish
Article number10NA08
JournalJapanese journal of applied physics
Volume51
Issue number10 PART 2
DOIs
Publication statusPublished - 2012 Oct

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Hallam, B., Wenham, S., Lee, H., Lee, E., Lee, H., Kim, J., Shin, J., Cho, K., & Kim, J. (2012). Record efficiency on large area p-type czochralski silicon substrates. Japanese journal of applied physics, 51(10 PART 2), [10NA08]. https://doi.org/10.1143/JJAP.51.10NA08