Abstract
In this work we report a world record independently confirmed efficiency of 19.4% for a large area p-type Czochralski grown solar cell fabricated with a full area aluminium back surface field. This is achieved using the laser doped selective emitter solar cell technology on an industrial screen print production line with the addition of laser doping and light induced plating equipment. The use of a modified diffusion process is explored in which the emitter is diffused to a sheet resistance of 90Ω/□ and subsequent etch back of the emitter to 120Ω/□. This results in a lower surface concentration of phosphorus compared to that of emitters diffused directly to 120Ω/□. This modified diffusion process subsequently reduces the conductivity of the surface in relation to that of the heavily diffused laser doped contacts and avoids parasitic plating, resulting an average absolute increase in efficiency of 0.4% compared to cells fabricated without an emitter etch back process.
| Original language | English |
|---|---|
| Article number | 10NA08 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 51 |
| Issue number | 10 PART 2 |
| DOIs | |
| Publication status | Published - 2012 Oct 1 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Record efficiency on large area p-type czochralski silicon substrates. / Hallam, Brett; Wenham, Stuart; Lee, Haeseok; Lee, Eunjoo; Lee, Hyunwoo; Kim, Jisun; Shin, Jeongeun; Cho, Kyeongyeon; Kim, Jisoo.
In: Japanese Journal of Applied Physics, Vol. 51, No. 10 PART 2, 10NA08, 01.10.2012.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Record efficiency on large area p-type czochralski silicon substrates
AU - Hallam, Brett
AU - Wenham, Stuart
AU - Lee, Haeseok
AU - Lee, Eunjoo
AU - Lee, Hyunwoo
AU - Kim, Jisun
AU - Shin, Jeongeun
AU - Cho, Kyeongyeon
AU - Kim, Jisoo
PY - 2012/10/1
Y1 - 2012/10/1
N2 - In this work we report a world record independently confirmed efficiency of 19.4% for a large area p-type Czochralski grown solar cell fabricated with a full area aluminium back surface field. This is achieved using the laser doped selective emitter solar cell technology on an industrial screen print production line with the addition of laser doping and light induced plating equipment. The use of a modified diffusion process is explored in which the emitter is diffused to a sheet resistance of 90Ω/□ and subsequent etch back of the emitter to 120Ω/□. This results in a lower surface concentration of phosphorus compared to that of emitters diffused directly to 120Ω/□. This modified diffusion process subsequently reduces the conductivity of the surface in relation to that of the heavily diffused laser doped contacts and avoids parasitic plating, resulting an average absolute increase in efficiency of 0.4% compared to cells fabricated without an emitter etch back process.
AB - In this work we report a world record independently confirmed efficiency of 19.4% for a large area p-type Czochralski grown solar cell fabricated with a full area aluminium back surface field. This is achieved using the laser doped selective emitter solar cell technology on an industrial screen print production line with the addition of laser doping and light induced plating equipment. The use of a modified diffusion process is explored in which the emitter is diffused to a sheet resistance of 90Ω/□ and subsequent etch back of the emitter to 120Ω/□. This results in a lower surface concentration of phosphorus compared to that of emitters diffused directly to 120Ω/□. This modified diffusion process subsequently reduces the conductivity of the surface in relation to that of the heavily diffused laser doped contacts and avoids parasitic plating, resulting an average absolute increase in efficiency of 0.4% compared to cells fabricated without an emitter etch back process.
UR - http://www.scopus.com/inward/record.url?scp=84869138717&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84869138717&partnerID=8YFLogxK
U2 - 10.1143/JJAP.51.10NA08
DO - 10.1143/JJAP.51.10NA08
M3 - Article
AN - SCOPUS:84869138717
VL - 51
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 10 PART 2
M1 - 10NA08
ER -