Recovery in dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors with thermal annealing

Byung Jae Kim, Ya Hsi Hwang, Shihyun Ahn, Weidi Zhu, Chen Dong, Liu Lu, Fan Ren, M. R. Holzworth, Kevin S. Jones, Stephen J. Pearton, David J. Smith, Ji Hyun Kim, Ming Lan Zhang

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Abstract

The recovery effects of thermal annealing on dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors were investigated. After stress, reverse gate leakage current and sub-threshold swing increased and drain current on-off ratio decreased. However, these degradations were completely recovered after thermal annealing at 450 °C for 10 mins for devices stressed either once or twice. The trap densities, which were estimated by temperature-dependent drain-current sub-threshold swing measurements, increased after off-state step-stress and were reduced after subsequent thermal annealing. In addition, the small signal rf characteristics of stressed devices were completely recovered after thermal annealing.

Original languageEnglish
Article number153504
JournalApplied Physics Letters
Volume106
Issue number15
DOIs
Publication statusPublished - 2015 Apr 13

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Kim, B. J., Hwang, Y. H., Ahn, S., Zhu, W., Dong, C., Lu, L., Ren, F., Holzworth, M. R., Jones, K. S., Pearton, S. J., Smith, D. J., Kim, J. H., & Zhang, M. L. (2015). Recovery in dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors with thermal annealing. Applied Physics Letters, 106(15), [153504]. https://doi.org/10.1063/1.4918530