Recovery in dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors with thermal annealing

Byung Jae Kim, Ya Hsi Hwang, Shihyun Ahn, Weidi Zhu, Chen Dong, Liu Lu, Fan Ren, M. R. Holzworth, Kevin S. Jones, Stephen J. Pearton, David J. Smith, Jihyun Kim, Ming Lan Zhang

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

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Physics & Astronomy