Reduced graphene oxide/single-walled carbon nanotube hybrid film using various p-type dopants and its application to gan-based light-emitting diodes

Byeong Ryong Lee, Tae Geun Kim

Research output: Contribution to journalArticle

Abstract

This paper reports the electrical and optical properties of the reduced graphene oxide (RGO)/singlewalled carbon nanotube (SWNT) films using various p-type dopants and its application to GaNbased light-emitting diodes. To enhance the current injection and spreading of the RGO/SWNT films on the light-emitting diodes (LEDs), we increased the work function (ℙ) of the films using chemical doping with AuCl3 , poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) (PEDOT:PSS) and MoO3 ; thereby reduced the Schottky barrier height between the RGO/SWNT films and p-GaN. By comparison, LEDs fabricated with work-function-tuned RGO/SWNT film doped with MoO3 exhibited the decrease of the forward voltage from 5.3V to 5.02 V at 20 mA and the increase of the output power up to 1.26 times. We also analyzed the current injection mechanism using ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy.

Original languageEnglish
Pages (from-to)6203-6208
Number of pages6
JournalJournal of Nanoscience and Nanotechnology
Volume16
Issue number6
DOIs
Publication statusPublished - 2016 Jun 1

Fingerprint

Carbon Nanotubes
Graphite
Single-walled carbon nanotubes (SWCN)
Oxides
Graphene
Light emitting diodes
graphene
light emitting diodes
carbon nanotubes
Doping (additives)
Carbon nanotubes
Light
Photoelectron Spectroscopy
oxides
Injections
photoelectron spectroscopy
Ultraviolet photoelectron spectroscopy
injection
ultraviolet spectroscopy
Electric properties

Keywords

  • AuCl
  • Dip-Coating methods.
  • MoO
  • P-GaN
  • PEDOT:PSS
  • RGO/SWNTs

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

Cite this

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title = "Reduced graphene oxide/single-walled carbon nanotube hybrid film using various p-type dopants and its application to gan-based light-emitting diodes",
abstract = "This paper reports the electrical and optical properties of the reduced graphene oxide (RGO)/singlewalled carbon nanotube (SWNT) films using various p-type dopants and its application to GaNbased light-emitting diodes. To enhance the current injection and spreading of the RGO/SWNT films on the light-emitting diodes (LEDs), we increased the work function (ℙ) of the films using chemical doping with AuCl3 , poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) (PEDOT:PSS) and MoO3 ; thereby reduced the Schottky barrier height between the RGO/SWNT films and p-GaN. By comparison, LEDs fabricated with work-function-tuned RGO/SWNT film doped with MoO3 exhibited the decrease of the forward voltage from 5.3V to 5.02 V at 20 mA and the increase of the output power up to 1.26 times. We also analyzed the current injection mechanism using ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy.",
keywords = "AuCl, Dip-Coating methods., MoO, P-GaN, PEDOT:PSS, RGO/SWNTs",
author = "Lee, {Byeong Ryong} and Kim, {Tae Geun}",
year = "2016",
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N2 - This paper reports the electrical and optical properties of the reduced graphene oxide (RGO)/singlewalled carbon nanotube (SWNT) films using various p-type dopants and its application to GaNbased light-emitting diodes. To enhance the current injection and spreading of the RGO/SWNT films on the light-emitting diodes (LEDs), we increased the work function (ℙ) of the films using chemical doping with AuCl3 , poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) (PEDOT:PSS) and MoO3 ; thereby reduced the Schottky barrier height between the RGO/SWNT films and p-GaN. By comparison, LEDs fabricated with work-function-tuned RGO/SWNT film doped with MoO3 exhibited the decrease of the forward voltage from 5.3V to 5.02 V at 20 mA and the increase of the output power up to 1.26 times. We also analyzed the current injection mechanism using ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy.

AB - This paper reports the electrical and optical properties of the reduced graphene oxide (RGO)/singlewalled carbon nanotube (SWNT) films using various p-type dopants and its application to GaNbased light-emitting diodes. To enhance the current injection and spreading of the RGO/SWNT films on the light-emitting diodes (LEDs), we increased the work function (ℙ) of the films using chemical doping with AuCl3 , poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) (PEDOT:PSS) and MoO3 ; thereby reduced the Schottky barrier height between the RGO/SWNT films and p-GaN. By comparison, LEDs fabricated with work-function-tuned RGO/SWNT film doped with MoO3 exhibited the decrease of the forward voltage from 5.3V to 5.02 V at 20 mA and the increase of the output power up to 1.26 times. We also analyzed the current injection mechanism using ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy.

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