Reduced graphene oxide/single-walled carbon nanotube hybrid films using various p-type dopants and their application to gan-based light-emitting diodes

Byeong Ryong Lee, Tae Geun Kim

Research output: Contribution to journalArticle

Abstract

This article reports the electrical and optical properties of the reduced graphene oxide (RGO)/single-walled carbon nanotube (SWCNT) films using various p-type dopants and their application to GaN-based light-emitting diodes. To enhance the current injection and spreading of the RGO/SWCNT films on the light-emitting diodes (LEDs), we increased the work function (Φ) of the films using chemical doping with AuCl3, poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) (PEDOT:PSS) and MoO3; thereby reduced the Schottky barrier height between the RGO/SWCNT films and p-GaN. By comparison, LEDs fabricated with work-function-tuned RGO/SWCNT film doped with MoO3 exhibited the decrease of the forward voltage from 5.3 V to 5.02 V at 20 mA and the increase of the output power up to 1.26 times. We also analyzed the current injection mechanism using ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy.

Original languageEnglish
Pages (from-to)454-459
Number of pages6
JournalJournal of Nanoscience and Nanotechnology
Volume17
Issue number1
DOIs
Publication statusPublished - 2017

Fingerprint

Carbon Nanotubes
Graphite
Single-walled carbon nanotubes (SWCN)
Oxides
Graphene
Light emitting diodes
graphene
light emitting diodes
carbon nanotubes
Doping (additives)
Light
Photoelectron Spectroscopy
oxides
Injections
photoelectron spectroscopy
Ultraviolet photoelectron spectroscopy
injection
ultraviolet spectroscopy
Electric properties
X ray photoelectron spectroscopy

Keywords

  • GaN
  • Light-emitting diodes
  • Reduced graphene oxide
  • Single-walled carbon nanotube

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

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title = "Reduced graphene oxide/single-walled carbon nanotube hybrid films using various p-type dopants and their application to gan-based light-emitting diodes",
abstract = "This article reports the electrical and optical properties of the reduced graphene oxide (RGO)/single-walled carbon nanotube (SWCNT) films using various p-type dopants and their application to GaN-based light-emitting diodes. To enhance the current injection and spreading of the RGO/SWCNT films on the light-emitting diodes (LEDs), we increased the work function (Φ) of the films using chemical doping with AuCl3, poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) (PEDOT:PSS) and MoO3; thereby reduced the Schottky barrier height between the RGO/SWCNT films and p-GaN. By comparison, LEDs fabricated with work-function-tuned RGO/SWCNT film doped with MoO3 exhibited the decrease of the forward voltage from 5.3 V to 5.02 V at 20 mA and the increase of the output power up to 1.26 times. We also analyzed the current injection mechanism using ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy.",
keywords = "GaN, Light-emitting diodes, Reduced graphene oxide, Single-walled carbon nanotube",
author = "Lee, {Byeong Ryong} and Kim, {Tae Geun}",
year = "2017",
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T1 - Reduced graphene oxide/single-walled carbon nanotube hybrid films using various p-type dopants and their application to gan-based light-emitting diodes

AU - Lee, Byeong Ryong

AU - Kim, Tae Geun

PY - 2017

Y1 - 2017

N2 - This article reports the electrical and optical properties of the reduced graphene oxide (RGO)/single-walled carbon nanotube (SWCNT) films using various p-type dopants and their application to GaN-based light-emitting diodes. To enhance the current injection and spreading of the RGO/SWCNT films on the light-emitting diodes (LEDs), we increased the work function (Φ) of the films using chemical doping with AuCl3, poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) (PEDOT:PSS) and MoO3; thereby reduced the Schottky barrier height between the RGO/SWCNT films and p-GaN. By comparison, LEDs fabricated with work-function-tuned RGO/SWCNT film doped with MoO3 exhibited the decrease of the forward voltage from 5.3 V to 5.02 V at 20 mA and the increase of the output power up to 1.26 times. We also analyzed the current injection mechanism using ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy.

AB - This article reports the electrical and optical properties of the reduced graphene oxide (RGO)/single-walled carbon nanotube (SWCNT) films using various p-type dopants and their application to GaN-based light-emitting diodes. To enhance the current injection and spreading of the RGO/SWCNT films on the light-emitting diodes (LEDs), we increased the work function (Φ) of the films using chemical doping with AuCl3, poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) (PEDOT:PSS) and MoO3; thereby reduced the Schottky barrier height between the RGO/SWCNT films and p-GaN. By comparison, LEDs fabricated with work-function-tuned RGO/SWCNT film doped with MoO3 exhibited the decrease of the forward voltage from 5.3 V to 5.02 V at 20 mA and the increase of the output power up to 1.26 times. We also analyzed the current injection mechanism using ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy.

KW - GaN

KW - Light-emitting diodes

KW - Reduced graphene oxide

KW - Single-walled carbon nanotube

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