Reducing Carrier Density in Formamidinium Tin Perovskites and Its Beneficial Effects on Stability and Efficiency of Perovskite Solar Cells

Seon Joo Lee; Seong Sik Shin; Jino Im; Tae Kyu Ahn; Jun Hong Noh; Nam Joong Jeon; Sang Il Seok; Jangwon Seo

doi:10.1021/acsenergylett.7b00976

Reducing Carrier Density in Formamidinium Tin Perovskites and Its Beneficial Effects on Stability and Efficiency of Perovskite Solar Cells

Seon Joo Lee, Seong Sik Shin, Jino Im, Tae Kyu Ahn, Jun Hong Noh, Nam Joong Jeon, Sang Il Seok, Jangwon Seo

Research output: Contribution to journal › Article

48 Citations (Scopus)

Abstract

In Sn-based halide perovskite solar cells (PSCs), the oxidation of Sn ²⁺ to Sn ⁴⁺ under ambient air leads to unwanted p-type doping in the perovskite film, which is a main reason for increased background carrier density and low efficiency. Here, we find that the introduction of bromide into formamidinium tin iodide (CH(NH ₂ ) ₂ SnI ₃ , FASnI ₃ ) lattice significantly lowers the carrier density of perovskite absorber, which is thought to be a result of reduction of Sn vacancies. It reduces the leakage current of devices, increases recombination lifetime, and finally improves open-circuit voltage and fill factor of the resulting devices employing mesoporous TiO ₂ as an electron transport layer. Consequently, a high power conversion efficiency (PCE) of 5.5% is achieved with an average PCE of 5%, and after encapsulation the devices are highly stable over 1000 h under continuous one sun illumination including the ultraviolet region. This study suggests a simple approach for improving stability and efficiency in FASnI ₃ -based PSCs.

Original language	English
Pages (from-to)	46-53
Number of pages	8
Journal	ACS Energy Letters
Volume	3
Issue number	1
DOIs	https://doi.org/10.1021/acsenergylett.7b00976
Publication status	Published - 2018 Jan 12

ASJC Scopus subject areas

Chemistry (miscellaneous)
Renewable Energy, Sustainability and the Environment
Fuel Technology
Energy Engineering and Power Technology
Materials Chemistry

Access to Document

10.1021/acsenergylett.7b00976

Fingerprint Dive into the research topics of 'Reducing Carrier Density in Formamidinium Tin Perovskites and Its Beneficial Effects on Stability and Efficiency of Perovskite Solar Cells'. Together they form a unique fingerprint.

Cite this

Lee, S. J., Shin, S. S., Im, J., Ahn, T. K., Noh, J. H., Jeon, N. J., Seok, S. I., & Seo, J. (2018). Reducing Carrier Density in Formamidinium Tin Perovskites and Its Beneficial Effects on Stability and Efficiency of Perovskite Solar Cells. ACS Energy Letters, 3(1), 46-53. https://doi.org/10.1021/acsenergylett.7b00976

Reducing Carrier Density in Formamidinium Tin Perovskites and Its Beneficial Effects on Stability and Efficiency of Perovskite Solar Cells. / Lee, Seon Joo; Shin, Seong Sik; Im, Jino; Ahn, Tae Kyu; Noh, Jun Hong; Jeon, Nam Joong; Seok, Sang Il; Seo, Jangwon.

In: ACS Energy Letters, Vol. 3, No. 1, 12.01.2018, p. 46-53.

Research output: Contribution to journal › Article

@article{b1e82a19f24f494b9dcc8de71d54c74d,

title = "Reducing Carrier Density in Formamidinium Tin Perovskites and Its Beneficial Effects on Stability and Efficiency of Perovskite Solar Cells",

abstract = " In Sn-based halide perovskite solar cells (PSCs), the oxidation of Sn 2+ to Sn 4+ under ambient air leads to unwanted p-type doping in the perovskite film, which is a main reason for increased background carrier density and low efficiency. Here, we find that the introduction of bromide into formamidinium tin iodide (CH(NH 2 ) 2 SnI 3 , FASnI 3 ) lattice significantly lowers the carrier density of perovskite absorber, which is thought to be a result of reduction of Sn vacancies. It reduces the leakage current of devices, increases recombination lifetime, and finally improves open-circuit voltage and fill factor of the resulting devices employing mesoporous TiO 2 as an electron transport layer. Consequently, a high power conversion efficiency (PCE) of 5.5% is achieved with an average PCE of 5%, and after encapsulation the devices are highly stable over 1000 h under continuous one sun illumination including the ultraviolet region. This study suggests a simple approach for improving stability and efficiency in FASnI 3 -based PSCs. ",

author = "Lee, {Seon Joo} and Shin, {Seong Sik} and Jino Im and Ahn, {Tae Kyu} and Noh, {Jun Hong} and Jeon, {Nam Joong} and Seok, {Sang Il} and Jangwon Seo",

year = "2018",

month = jan,

day = "12",

doi = "10.1021/acsenergylett.7b00976",

language = "English",

volume = "3",

pages = "46--53",

journal = "ACS Energy Letters",

issn = "2380-8195",

publisher = "American Chemical Society",

number = "1",

}

TY - JOUR

T1 - Reducing Carrier Density in Formamidinium Tin Perovskites and Its Beneficial Effects on Stability and Efficiency of Perovskite Solar Cells

AU - Lee, Seon Joo

AU - Shin, Seong Sik

AU - Im, Jino

AU - Ahn, Tae Kyu

AU - Noh, Jun Hong

AU - Jeon, Nam Joong

AU - Seok, Sang Il

AU - Seo, Jangwon

PY - 2018/1/12

Y1 - 2018/1/12

N2 - In Sn-based halide perovskite solar cells (PSCs), the oxidation of Sn 2+ to Sn 4+ under ambient air leads to unwanted p-type doping in the perovskite film, which is a main reason for increased background carrier density and low efficiency. Here, we find that the introduction of bromide into formamidinium tin iodide (CH(NH 2 ) 2 SnI 3 , FASnI 3 ) lattice significantly lowers the carrier density of perovskite absorber, which is thought to be a result of reduction of Sn vacancies. It reduces the leakage current of devices, increases recombination lifetime, and finally improves open-circuit voltage and fill factor of the resulting devices employing mesoporous TiO 2 as an electron transport layer. Consequently, a high power conversion efficiency (PCE) of 5.5% is achieved with an average PCE of 5%, and after encapsulation the devices are highly stable over 1000 h under continuous one sun illumination including the ultraviolet region. This study suggests a simple approach for improving stability and efficiency in FASnI 3 -based PSCs.

AB - In Sn-based halide perovskite solar cells (PSCs), the oxidation of Sn 2+ to Sn 4+ under ambient air leads to unwanted p-type doping in the perovskite film, which is a main reason for increased background carrier density and low efficiency. Here, we find that the introduction of bromide into formamidinium tin iodide (CH(NH 2 ) 2 SnI 3 , FASnI 3 ) lattice significantly lowers the carrier density of perovskite absorber, which is thought to be a result of reduction of Sn vacancies. It reduces the leakage current of devices, increases recombination lifetime, and finally improves open-circuit voltage and fill factor of the resulting devices employing mesoporous TiO 2 as an electron transport layer. Consequently, a high power conversion efficiency (PCE) of 5.5% is achieved with an average PCE of 5%, and after encapsulation the devices are highly stable over 1000 h under continuous one sun illumination including the ultraviolet region. This study suggests a simple approach for improving stability and efficiency in FASnI 3 -based PSCs.

UR - http://www.scopus.com/inward/record.url?scp=85040612411&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85040612411&partnerID=8YFLogxK

U2 - 10.1021/acsenergylett.7b00976

DO - 10.1021/acsenergylett.7b00976

M3 - Article

AN - SCOPUS:85040612411

VL - 3

SP - 46

EP - 53

JO - ACS Energy Letters

JF - ACS Energy Letters

SN - 2380-8195

IS - 1

ER -