Reduction of buffer leakage in AIGaN/GaN HEMTs with an AIGaN current-blocking barrier by using a two-dimensional simulation

Su Jin Kim, Dong Ho Kim, Jae Moo Kim, Tae Geun Kim, Hong Goo Choi, Cheol Koo Hahn

Research output: Contribution to journalArticle

Abstract

We report improved transport characteristics for of AIGaN/GaN/AIGaN double heterostructure (DH) high-electron-mobility transistors (HEMTs) with an AIGaN current-blocking-barrier (CBB) structure. The proposed device features a 40-nm-thick AIGaN CBB embedded into a conventional AIGaN/GaN HEMT to prevent the two-dimensional electron gas (2-DEG) of the HEMT from spilling over the buffer layer, effectively reducing the buffer leakage current. Simulation results clearly indicate that the proposed AlGaN/GaN/AlGaN DH-HEMT has not only better current confinement of the 2-DEG channel but also less leakage currents into the GaN buffer layer compared with the conventional AIGaN/GaN HEMT. In the DH-HEMT with an AIGaN CBB, we observed an approximately 56.9 % improvement in the maximum drain current density (ID,max) and a 16 % improvement in maximum transconductance (gm,max) at zero gate bias condition over the conventional SH-HEMT.

Original languageEnglish
Pages (from-to)2572-2577
Number of pages6
JournalJournal of the Korean Physical Society
Volume53
Issue number5 PART 1
DOIs
Publication statusPublished - 2008 Nov

Keywords

  • 2-DEG
  • Buffer leakage
  • Double heterostructure
  • High-electron-mobility transistor

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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