Reduction of critical current density for spin transfer magnetization switching in a spin-valve nano-pillar

C. H. Kang, J. C. Lee, K. H. Shin, Sang Ho Lim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Experimental results on the current induced magnetization switching of nano-patterned IrMn/CoFe/Cu/CoFe spin-valves are reported. The main emphasis is the increase of MR and the reduction of the critical current density through an improved fabrication process. A method using a batch-fabricated trilayer template is developed with the junction features defined by a platinum(Pt) stencil mask. Nano-pillars with the lateral dimensions (150×80 nm 2) are fabricated by electron-beam lithography, including a wet etching to form a nanotemplate. A key to the improved fabrication process is the formation of the recessed part of the SiO2 layer which helps to reduce the shadow effect during the deposition of the spin valve multilayers into the nanotemplate. Both the MR ratio and the critical current density are enhanced by the new improved fabrication process. The observed critical current density is 5.98 ×106 A/cm2, which is significantly smaller than the value of 1.16×108 A/cm2 observed in a similar device fabricated using a conventional fabrication process.

Original languageEnglish
Title of host publication2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages614-615
Number of pages2
Volume1
DOIs
Publication statusPublished - 2006 Dec 1
Event2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of
Duration: 2006 Oct 222006 Oct 25

Other

Other2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
CountryKorea, Republic of
CityGyeongju
Period06/10/2206/10/25

Fingerprint

Magnetization
Fabrication
Electron beam lithography
Wet etching
Induced currents
Platinum
Masks
Multilayers

Keywords

  • Current-induced magnetization switching
  • Improved fabrication process
  • Spin transfr torque
  • Spin-valve nano-pillar

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)

Cite this

Kang, C. H., Lee, J. C., Shin, K. H., & Lim, S. H. (2006). Reduction of critical current density for spin transfer magnetization switching in a spin-valve nano-pillar. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (Vol. 1, pp. 614-615). [4388929] https://doi.org/10.1109/NMDC.2006.4388929

Reduction of critical current density for spin transfer magnetization switching in a spin-valve nano-pillar. / Kang, C. H.; Lee, J. C.; Shin, K. H.; Lim, Sang Ho.

2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. Vol. 1 2006. p. 614-615 4388929.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kang, CH, Lee, JC, Shin, KH & Lim, SH 2006, Reduction of critical current density for spin transfer magnetization switching in a spin-valve nano-pillar. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. vol. 1, 4388929, pp. 614-615, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 06/10/22. https://doi.org/10.1109/NMDC.2006.4388929
Kang CH, Lee JC, Shin KH, Lim SH. Reduction of critical current density for spin transfer magnetization switching in a spin-valve nano-pillar. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. Vol. 1. 2006. p. 614-615. 4388929 https://doi.org/10.1109/NMDC.2006.4388929
Kang, C. H. ; Lee, J. C. ; Shin, K. H. ; Lim, Sang Ho. / Reduction of critical current density for spin transfer magnetization switching in a spin-valve nano-pillar. 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. Vol. 1 2006. pp. 614-615
@inproceedings{937a8c704ca74b4085e19d2758d68608,
title = "Reduction of critical current density for spin transfer magnetization switching in a spin-valve nano-pillar",
abstract = "Experimental results on the current induced magnetization switching of nano-patterned IrMn/CoFe/Cu/CoFe spin-valves are reported. The main emphasis is the increase of MR and the reduction of the critical current density through an improved fabrication process. A method using a batch-fabricated trilayer template is developed with the junction features defined by a platinum(Pt) stencil mask. Nano-pillars with the lateral dimensions (150×80 nm 2) are fabricated by electron-beam lithography, including a wet etching to form a nanotemplate. A key to the improved fabrication process is the formation of the recessed part of the SiO2 layer which helps to reduce the shadow effect during the deposition of the spin valve multilayers into the nanotemplate. Both the MR ratio and the critical current density are enhanced by the new improved fabrication process. The observed critical current density is 5.98 ×106 A/cm2, which is significantly smaller than the value of 1.16×108 A/cm2 observed in a similar device fabricated using a conventional fabrication process.",
keywords = "Current-induced magnetization switching, Improved fabrication process, Spin transfr torque, Spin-valve nano-pillar",
author = "Kang, {C. H.} and Lee, {J. C.} and Shin, {K. H.} and Lim, {Sang Ho}",
year = "2006",
month = "12",
day = "1",
doi = "10.1109/NMDC.2006.4388929",
language = "English",
isbn = "1424405408",
volume = "1",
pages = "614--615",
booktitle = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

}

TY - GEN

T1 - Reduction of critical current density for spin transfer magnetization switching in a spin-valve nano-pillar

AU - Kang, C. H.

AU - Lee, J. C.

AU - Shin, K. H.

AU - Lim, Sang Ho

PY - 2006/12/1

Y1 - 2006/12/1

N2 - Experimental results on the current induced magnetization switching of nano-patterned IrMn/CoFe/Cu/CoFe spin-valves are reported. The main emphasis is the increase of MR and the reduction of the critical current density through an improved fabrication process. A method using a batch-fabricated trilayer template is developed with the junction features defined by a platinum(Pt) stencil mask. Nano-pillars with the lateral dimensions (150×80 nm 2) are fabricated by electron-beam lithography, including a wet etching to form a nanotemplate. A key to the improved fabrication process is the formation of the recessed part of the SiO2 layer which helps to reduce the shadow effect during the deposition of the spin valve multilayers into the nanotemplate. Both the MR ratio and the critical current density are enhanced by the new improved fabrication process. The observed critical current density is 5.98 ×106 A/cm2, which is significantly smaller than the value of 1.16×108 A/cm2 observed in a similar device fabricated using a conventional fabrication process.

AB - Experimental results on the current induced magnetization switching of nano-patterned IrMn/CoFe/Cu/CoFe spin-valves are reported. The main emphasis is the increase of MR and the reduction of the critical current density through an improved fabrication process. A method using a batch-fabricated trilayer template is developed with the junction features defined by a platinum(Pt) stencil mask. Nano-pillars with the lateral dimensions (150×80 nm 2) are fabricated by electron-beam lithography, including a wet etching to form a nanotemplate. A key to the improved fabrication process is the formation of the recessed part of the SiO2 layer which helps to reduce the shadow effect during the deposition of the spin valve multilayers into the nanotemplate. Both the MR ratio and the critical current density are enhanced by the new improved fabrication process. The observed critical current density is 5.98 ×106 A/cm2, which is significantly smaller than the value of 1.16×108 A/cm2 observed in a similar device fabricated using a conventional fabrication process.

KW - Current-induced magnetization switching

KW - Improved fabrication process

KW - Spin transfr torque

KW - Spin-valve nano-pillar

UR - http://www.scopus.com/inward/record.url?scp=50249170289&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=50249170289&partnerID=8YFLogxK

U2 - 10.1109/NMDC.2006.4388929

DO - 10.1109/NMDC.2006.4388929

M3 - Conference contribution

AN - SCOPUS:50249170289

SN - 1424405408

SN - 9781424405404

VL - 1

SP - 614

EP - 615

BT - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

ER -