Reduction of critical current density for spin transfer magnetization switching in a spin-valve nano-pillar

C. H. Kang; J. C. Lee; K. H. Shin; S. H. Lim

doi:10.1109/NMDC.2006.4388929

Reduction of critical current density for spin transfer magnetization switching in a spin-valve nano-pillar

C. H. Kang, J. C. Lee, K. H. Shin, S. H. Lim

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Experimental results on the current induced magnetization switching of nano-patterned IrMn/CoFe/Cu/CoFe spin-valves are reported. The main emphasis is the increase of MR and the reduction of the critical current density through an improved fabrication process. A method using a batch-fabricated trilayer template is developed with the junction features defined by a platinum(Pt) stencil mask. Nano-pillars with the lateral dimensions (150×80 nm ²) are fabricated by electron-beam lithography, including a wet etching to form a nanotemplate. A key to the improved fabrication process is the formation of the recessed part of the SiO₂ layer which helps to reduce the shadow effect during the deposition of the spin valve multilayers into the nanotemplate. Both the MR ratio and the critical current density are enhanced by the new improved fabrication process. The observed critical current density is 5.98 ×10⁶ A/cm², which is significantly smaller than the value of 1.16×10⁸ A/cm² observed in a similar device fabricated using a conventional fabrication process.

Original language	English
Title of host publication	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages	614-615
Number of pages	2
DOIs	https://doi.org/10.1109/NMDC.2006.4388929
Publication status	Published - 2006
Event	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of Duration: 2006 Oct 22 → 2006 Oct 25

Publication series

Name	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume	1

Other

Other	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Country/Territory	Korea, Republic of
City	Gyeongju
Period	06/10/22 → 06/10/25

Keywords

Current-induced magnetization switching
Improved fabrication process
Spin transfr torque
Spin-valve nano-pillar

ASJC Scopus subject areas

Electrical and Electronic Engineering
Materials Science(all)

Access to Document

10.1109/NMDC.2006.4388929

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Kang, C. H., Lee, J. C., Shin, K. H., & Lim, S. H. (2006). Reduction of critical current density for spin transfer magnetization switching in a spin-valve nano-pillar. In 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC (pp. 614-615). [4388929] (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1). https://doi.org/10.1109/NMDC.2006.4388929

Reduction of critical current density for spin transfer magnetization switching in a spin-valve nano-pillar. / Kang, C. H.; Lee, J. C.; Shin, K. H. et al.

2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. 2006. p. 614-615 4388929 (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kang, CH, Lee, JC, Shin, KH & Lim, SH 2006, Reduction of critical current density for spin transfer magnetization switching in a spin-valve nano-pillar. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC., 4388929, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, vol. 1, pp. 614-615, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 06/10/22. https://doi.org/10.1109/NMDC.2006.4388929

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abstract = "Experimental results on the current induced magnetization switching of nano-patterned IrMn/CoFe/Cu/CoFe spin-valves are reported. The main emphasis is the increase of MR and the reduction of the critical current density through an improved fabrication process. A method using a batch-fabricated trilayer template is developed with the junction features defined by a platinum(Pt) stencil mask. Nano-pillars with the lateral dimensions (150×80 nm 2) are fabricated by electron-beam lithography, including a wet etching to form a nanotemplate. A key to the improved fabrication process is the formation of the recessed part of the SiO2 layer which helps to reduce the shadow effect during the deposition of the spin valve multilayers into the nanotemplate. Both the MR ratio and the critical current density are enhanced by the new improved fabrication process. The observed critical current density is 5.98 ×106 A/cm2, which is significantly smaller than the value of 1.16×108 A/cm2 observed in a similar device fabricated using a conventional fabrication process.",

keywords = "Current-induced magnetization switching, Improved fabrication process, Spin transfr torque, Spin-valve nano-pillar",

author = "Kang, {C. H.} and Lee, {J. C.} and Shin, {K. H.} and Lim, {S. H.}",

year = "2006",

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N2 - Experimental results on the current induced magnetization switching of nano-patterned IrMn/CoFe/Cu/CoFe spin-valves are reported. The main emphasis is the increase of MR and the reduction of the critical current density through an improved fabrication process. A method using a batch-fabricated trilayer template is developed with the junction features defined by a platinum(Pt) stencil mask. Nano-pillars with the lateral dimensions (150×80 nm 2) are fabricated by electron-beam lithography, including a wet etching to form a nanotemplate. A key to the improved fabrication process is the formation of the recessed part of the SiO2 layer which helps to reduce the shadow effect during the deposition of the spin valve multilayers into the nanotemplate. Both the MR ratio and the critical current density are enhanced by the new improved fabrication process. The observed critical current density is 5.98 ×106 A/cm2, which is significantly smaller than the value of 1.16×108 A/cm2 observed in a similar device fabricated using a conventional fabrication process.

AB - Experimental results on the current induced magnetization switching of nano-patterned IrMn/CoFe/Cu/CoFe spin-valves are reported. The main emphasis is the increase of MR and the reduction of the critical current density through an improved fabrication process. A method using a batch-fabricated trilayer template is developed with the junction features defined by a platinum(Pt) stencil mask. Nano-pillars with the lateral dimensions (150×80 nm 2) are fabricated by electron-beam lithography, including a wet etching to form a nanotemplate. A key to the improved fabrication process is the formation of the recessed part of the SiO2 layer which helps to reduce the shadow effect during the deposition of the spin valve multilayers into the nanotemplate. Both the MR ratio and the critical current density are enhanced by the new improved fabrication process. The observed critical current density is 5.98 ×106 A/cm2, which is significantly smaller than the value of 1.16×108 A/cm2 observed in a similar device fabricated using a conventional fabrication process.

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KW - Improved fabrication process

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Reduction of critical current density for spin transfer magnetization switching in a spin-valve nano-pillar

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