Reduction of defects in GaN on reactive ion beam treated sapphire by annealing

Dong Jin Byun, J. Jhin, S. Cho, Ji Hyun Kim, S. J. Lee, C. H. Hong, G. Kim, W. K. Choi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Previous studies showed that reactive ion beam (RIB) pretreatment of sapphire prior to GaN deposition results in the reduction of dislocation density in the GaN film. It was also found that an amorphous phase remained at the interface region after the GaN deposition at high temperature. Annealing was performed to obtain the structural change due to the recrystallization of the remaining amorphous phase, and the effect on the electrical properties of the GaN thin film on RIB treated sapphire (0001) substrate. DCXRD spectra and Hall mobility of the specimen were studied as a function of the annealing time at 1000 °C in N2 atmosphere. For the annealed specimen, FWHM of DCXRD decreased and the mobility increased. The annealed specimen was compared with a not annealed sample by TEM. A decrease of lattice strain and a reduction of the dislocation density about 56-59% was observed. The present results clearly show that the combination of RIB pretreatment and proper post annealing conditions improve the properties of GaN films grown by MOCVD.

Original languageEnglish
Pages (from-to)315-318
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume228
Issue number1
DOIs
Publication statusPublished - 2001 Nov 1

Fingerprint

Aluminum Oxide
Sapphire
Ion beams
sapphire
ion beams
Annealing
pretreatment
Defects
annealing
defects
Hall mobility
Metallorganic chemical vapor deposition
Full width at half maximum
metalorganic chemical vapor deposition
Electric properties
electrical properties
Transmission electron microscopy
atmospheres
Thin films
transmission electron microscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Reduction of defects in GaN on reactive ion beam treated sapphire by annealing. / Byun, Dong Jin; Jhin, J.; Cho, S.; Kim, Ji Hyun; Lee, S. J.; Hong, C. H.; Kim, G.; Choi, W. K.

In: Physica Status Solidi (B) Basic Research, Vol. 228, No. 1, 01.11.2001, p. 315-318.

Research output: Contribution to journalArticle

Byun, Dong Jin ; Jhin, J. ; Cho, S. ; Kim, Ji Hyun ; Lee, S. J. ; Hong, C. H. ; Kim, G. ; Choi, W. K. / Reduction of defects in GaN on reactive ion beam treated sapphire by annealing. In: Physica Status Solidi (B) Basic Research. 2001 ; Vol. 228, No. 1. pp. 315-318.
@article{9aa6173405a849a4a819a930ce0bf039,
title = "Reduction of defects in GaN on reactive ion beam treated sapphire by annealing",
abstract = "Previous studies showed that reactive ion beam (RIB) pretreatment of sapphire prior to GaN deposition results in the reduction of dislocation density in the GaN film. It was also found that an amorphous phase remained at the interface region after the GaN deposition at high temperature. Annealing was performed to obtain the structural change due to the recrystallization of the remaining amorphous phase, and the effect on the electrical properties of the GaN thin film on RIB treated sapphire (0001) substrate. DCXRD spectra and Hall mobility of the specimen were studied as a function of the annealing time at 1000 °C in N2 atmosphere. For the annealed specimen, FWHM of DCXRD decreased and the mobility increased. The annealed specimen was compared with a not annealed sample by TEM. A decrease of lattice strain and a reduction of the dislocation density about 56-59{\%} was observed. The present results clearly show that the combination of RIB pretreatment and proper post annealing conditions improve the properties of GaN films grown by MOCVD.",
author = "Byun, {Dong Jin} and J. Jhin and S. Cho and Kim, {Ji Hyun} and Lee, {S. J.} and Hong, {C. H.} and G. Kim and Choi, {W. K.}",
year = "2001",
month = "11",
day = "1",
doi = "10.1002/1521-3951(200111)228:1<315::AID-PSSB315>3.0.CO;2-Z",
language = "English",
volume = "228",
pages = "315--318",
journal = "Physica Status Solidi (B): Basic Research",
issn = "0370-1972",
publisher = "Wiley-VCH Verlag",
number = "1",

}

TY - JOUR

T1 - Reduction of defects in GaN on reactive ion beam treated sapphire by annealing

AU - Byun, Dong Jin

AU - Jhin, J.

AU - Cho, S.

AU - Kim, Ji Hyun

AU - Lee, S. J.

AU - Hong, C. H.

AU - Kim, G.

AU - Choi, W. K.

PY - 2001/11/1

Y1 - 2001/11/1

N2 - Previous studies showed that reactive ion beam (RIB) pretreatment of sapphire prior to GaN deposition results in the reduction of dislocation density in the GaN film. It was also found that an amorphous phase remained at the interface region after the GaN deposition at high temperature. Annealing was performed to obtain the structural change due to the recrystallization of the remaining amorphous phase, and the effect on the electrical properties of the GaN thin film on RIB treated sapphire (0001) substrate. DCXRD spectra and Hall mobility of the specimen were studied as a function of the annealing time at 1000 °C in N2 atmosphere. For the annealed specimen, FWHM of DCXRD decreased and the mobility increased. The annealed specimen was compared with a not annealed sample by TEM. A decrease of lattice strain and a reduction of the dislocation density about 56-59% was observed. The present results clearly show that the combination of RIB pretreatment and proper post annealing conditions improve the properties of GaN films grown by MOCVD.

AB - Previous studies showed that reactive ion beam (RIB) pretreatment of sapphire prior to GaN deposition results in the reduction of dislocation density in the GaN film. It was also found that an amorphous phase remained at the interface region after the GaN deposition at high temperature. Annealing was performed to obtain the structural change due to the recrystallization of the remaining amorphous phase, and the effect on the electrical properties of the GaN thin film on RIB treated sapphire (0001) substrate. DCXRD spectra and Hall mobility of the specimen were studied as a function of the annealing time at 1000 °C in N2 atmosphere. For the annealed specimen, FWHM of DCXRD decreased and the mobility increased. The annealed specimen was compared with a not annealed sample by TEM. A decrease of lattice strain and a reduction of the dislocation density about 56-59% was observed. The present results clearly show that the combination of RIB pretreatment and proper post annealing conditions improve the properties of GaN films grown by MOCVD.

UR - http://www.scopus.com/inward/record.url?scp=0035541097&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035541097&partnerID=8YFLogxK

U2 - 10.1002/1521-3951(200111)228:1<315::AID-PSSB315>3.0.CO;2-Z

DO - 10.1002/1521-3951(200111)228:1<315::AID-PSSB315>3.0.CO;2-Z

M3 - Article

VL - 228

SP - 315

EP - 318

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

SN - 0370-1972

IS - 1

ER -