Reduction of dislocation density in mismatched SiGe/Si using a low-temperature Si buffer layer

K. K. Linder, F. C. Zhang, Jae-Sung Rieh, P. Bhattacharya, D. Houghton

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Abstract

The reduction of the dislocation density in relaxed SiGe/Si heterostructures using a low-temperature Si(LT-Si) buffer has been investigated. We have shown that a 0.1 μm LT-Si buffer reduces the threading dislocation density in mismatched Si0.85Ge0.15/Si epitaxial layers as low as ∼104cm-2. Samples were grown by both gas-source molecular beam epitaxy and ultrahigh vacuum chemical vapor deposition.

Original languageEnglish
Pages (from-to)3224-3226
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number24
Publication statusPublished - 1997 Jun 16
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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  • Cite this

    Linder, K. K., Zhang, F. C., Rieh, J-S., Bhattacharya, P., & Houghton, D. (1997). Reduction of dislocation density in mismatched SiGe/Si using a low-temperature Si buffer layer. Applied Physics Letters, 70(24), 3224-3226.