The reduction of the dislocation density in relaxed SiGe/Si heterostructures using a low-temperature Si(LT-Si) buffer has been investigated. We have shown that a 0.1 μm LT-Si buffer reduces the threading dislocation density in mismatched Si0.85Ge0.15/Si epitaxial layers as low as ∼104cm-2. Samples were grown by both gas-source molecular beam epitaxy and ultrahigh vacuum chemical vapor deposition.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 1997 Jun 16|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)