Abstract
In this study, the hysteresis mechanism is investigated for bottom-gate HgSe nanoparticle (NP)-based thin-film transistors (TFTs) using cross-linked poly vinyl alcohol (PVA) as the gate dielectric on plastics. The hysteresis loop with the clockwise direction is observed and the width of the hysteresis is reduced at long delay times. These phenomena indicate that the origin of the hysteresis is the injection of electrons from the gate electrode to the trap site located in the PVA layer. The widths of the hysteresis curves taken from the TFTs are not reduced even though the annealing treatment for the PVA gate dielectric is performed und eb N 2, O 2, and in a vacuum at 120 °C for 1 hour. The electron injection from the gate electrode is effectively prevented by inserting Al 2O 3 of 10 nm utilized as the blocking layer between gate electrode and PVA layer. The hysteresis window is remarkably reduced from about 8 V in HgSe NP-based TFTs without blocking layer to nearly 0 V in the TFTs with blocking layer of Al 2O 3.
| Original language | English |
|---|---|
| Pages (from-to) | 6114-6117 |
| Number of pages | 4 |
| Journal | Journal of Nanoscience and Nanotechnology |
| Volume | 11 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2011 Jul 1 |
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Keywords
- HgSe
- Hysteresis
- Nanoparticle
- PVA
ASJC Scopus subject areas
- Condensed Matter Physics
- Chemistry(all)
- Materials Science(all)
- Bioengineering
- Biomedical Engineering
Cite this
Reduction of hysteresis in HgSe nanoparticle-based thin-film transistors using blocking oxide layers on plastics. / Yun, Junggwon; Cho, Kyoungah; Kim, Sangsig.
In: Journal of Nanoscience and Nanotechnology, Vol. 11, No. 7, 01.07.2011, p. 6114-6117.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Reduction of hysteresis in HgSe nanoparticle-based thin-film transistors using blocking oxide layers on plastics
AU - Yun, Junggwon
AU - Cho, Kyoungah
AU - Kim, Sangsig
PY - 2011/7/1
Y1 - 2011/7/1
N2 - In this study, the hysteresis mechanism is investigated for bottom-gate HgSe nanoparticle (NP)-based thin-film transistors (TFTs) using cross-linked poly vinyl alcohol (PVA) as the gate dielectric on plastics. The hysteresis loop with the clockwise direction is observed and the width of the hysteresis is reduced at long delay times. These phenomena indicate that the origin of the hysteresis is the injection of electrons from the gate electrode to the trap site located in the PVA layer. The widths of the hysteresis curves taken from the TFTs are not reduced even though the annealing treatment for the PVA gate dielectric is performed und eb N 2, O 2, and in a vacuum at 120 °C for 1 hour. The electron injection from the gate electrode is effectively prevented by inserting Al 2O 3 of 10 nm utilized as the blocking layer between gate electrode and PVA layer. The hysteresis window is remarkably reduced from about 8 V in HgSe NP-based TFTs without blocking layer to nearly 0 V in the TFTs with blocking layer of Al 2O 3.
AB - In this study, the hysteresis mechanism is investigated for bottom-gate HgSe nanoparticle (NP)-based thin-film transistors (TFTs) using cross-linked poly vinyl alcohol (PVA) as the gate dielectric on plastics. The hysteresis loop with the clockwise direction is observed and the width of the hysteresis is reduced at long delay times. These phenomena indicate that the origin of the hysteresis is the injection of electrons from the gate electrode to the trap site located in the PVA layer. The widths of the hysteresis curves taken from the TFTs are not reduced even though the annealing treatment for the PVA gate dielectric is performed und eb N 2, O 2, and in a vacuum at 120 °C for 1 hour. The electron injection from the gate electrode is effectively prevented by inserting Al 2O 3 of 10 nm utilized as the blocking layer between gate electrode and PVA layer. The hysteresis window is remarkably reduced from about 8 V in HgSe NP-based TFTs without blocking layer to nearly 0 V in the TFTs with blocking layer of Al 2O 3.
KW - HgSe
KW - Hysteresis
KW - Nanoparticle
KW - PVA
UR - http://www.scopus.com/inward/record.url?scp=84863078696&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84863078696&partnerID=8YFLogxK
U2 - 10.1166/jnn.2011.4473
DO - 10.1166/jnn.2011.4473
M3 - Article
C2 - 22121668
AN - SCOPUS:84863078696
VL - 11
SP - 6114
EP - 6117
JO - Journal of Nanoscience and Nanotechnology
JF - Journal of Nanoscience and Nanotechnology
SN - 1533-4880
IS - 7
ER -