Reduction of residual carbon in GaAsN films grown by chemical beam epitaxy

Hidetoshi Suzuki, Kenichi Nishimura, Hae Seok Lee, Kenji Saito, Tetsuya Kawahigashi, Takahiro Imai, Yoshio Ohshita, Masafumi Yamaguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Crystal quality of GaAsN films can be improved by using chemical beam epitaxy method for low-temperature growth. However, low-temperature growth increases carbon (C) incorporation in the films, which degrades their electrical properties. To reduce the C concentration in the films, C incorporation process was investigated in view of the surface reaction of nitrogen (N) sources on a substrate surface, and monomethylhydrazine (MMHy) and 1,1-dimethylhydrazine (DMHy) were compared. When MMHy was used as an N source, the C concentration in GaAsN drastically increases below 380°C than that in GaAs due to insufficient CHx desorption. In the case of DMHy, N(CH 3)2 is desorbed more readily than CHx, Therefore, the C concentration can then be reduced by using DMHy.

Original languageEnglish
Title of host publicationConference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
PublisherIEEE Computer Society
Pages819-822
Number of pages4
ISBN (Print)1424400163, 9781424400164
DOIs
Publication statusPublished - 2006
Externally publishedYes
Event2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States
Duration: 2006 May 72006 May 12

Publication series

NameConference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Volume1

Other

Other2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
CountryUnited States
CityWaikoloa, HI
Period06/5/706/5/12

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

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