Reduction of residual carbon in GaAsN films grown by chemical beam epitaxy

Hidetoshi Suzuki, Kenichi Nishimura, Haeseok Lee, Kenji Saito, Tetsuya Kawahigashi, Takahiro Imai, Yoshio Ohshita, Masafumi Yamaguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Crystal quality of GaAsN films can be improved by using chemical beam epitaxy method for low-temperature growth. However, low-temperature growth increases carbon (C) incorporation in the films, which degrades their electrical properties. To reduce the C concentration in the films, C incorporation process was investigated in view of the surface reaction of nitrogen (N) sources on a substrate surface, and monomethylhydrazine (MMHy) and 1,1-dimethylhydrazine (DMHy) were compared. When MMHy was used as an N source, the C concentration in GaAsN drastically increases below 380°C than that in GaAs due to insufficient CHx desorption. In the case of DMHy, N(CH 3)2 is desorbed more readily than CHx, Therefore, the C concentration can then be reduced by using DMHy.

Original languageEnglish
Title of host publicationConference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Pages819-822
Number of pages4
DOIs
Publication statusPublished - 2007 Dec 1
Externally publishedYes
Event2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States
Duration: 2006 May 72006 May 12

Publication series

NameConference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Volume1

Other

Other2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
CountryUnited States
CityWaikoloa, HI
Period06/5/706/5/12

Fingerprint

Chemical beam epitaxy
Monomethylhydrazine
Dimethylhydrazines
Carbon
Growth temperature
Surface reactions
Desorption
Electric properties
Nitrogen
Crystals
Substrates

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

Cite this

Suzuki, H., Nishimura, K., Lee, H., Saito, K., Kawahigashi, T., Imai, T., ... Yamaguchi, M. (2007). Reduction of residual carbon in GaAsN films grown by chemical beam epitaxy. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 (pp. 819-822). [4059755] (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 1). https://doi.org/10.1109/WCPEC.2006.279582

Reduction of residual carbon in GaAsN films grown by chemical beam epitaxy. / Suzuki, Hidetoshi; Nishimura, Kenichi; Lee, Haeseok; Saito, Kenji; Kawahigashi, Tetsuya; Imai, Takahiro; Ohshita, Yoshio; Yamaguchi, Masafumi.

Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. 2007. p. 819-822 4059755 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Suzuki, H, Nishimura, K, Lee, H, Saito, K, Kawahigashi, T, Imai, T, Ohshita, Y & Yamaguchi, M 2007, Reduction of residual carbon in GaAsN films grown by chemical beam epitaxy. in Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4., 4059755, Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, vol. 1, pp. 819-822, 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, Waikoloa, HI, United States, 06/5/7. https://doi.org/10.1109/WCPEC.2006.279582
Suzuki H, Nishimura K, Lee H, Saito K, Kawahigashi T, Imai T et al. Reduction of residual carbon in GaAsN films grown by chemical beam epitaxy. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. 2007. p. 819-822. 4059755. (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4). https://doi.org/10.1109/WCPEC.2006.279582
Suzuki, Hidetoshi ; Nishimura, Kenichi ; Lee, Haeseok ; Saito, Kenji ; Kawahigashi, Tetsuya ; Imai, Takahiro ; Ohshita, Yoshio ; Yamaguchi, Masafumi. / Reduction of residual carbon in GaAsN films grown by chemical beam epitaxy. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. 2007. pp. 819-822 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4).
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