Reduction of residual carbon in GaAsN films grown by chemical beam epitaxy

Hidetoshi Suzuki, Kenichi Nishimura, Haeseok Lee, Kenji Saito, Tetsuya Kawahigashi, Takahiro Imai, Yoshio Ohshita, Masafumi Yamaguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Crystal quality of GaAsN films can be improved by using chemical beam epitaxy method for low-temperature growth. However, low-temperature growth increases carbon (C) incorporation in the films, which degrades their electrical properties. To reduce the C concentration in the films, C incorporation process was investigated in view of the surface reaction of nitrogen (N) sources on a substrate surface, and monomethylhydrazine (MMHy) and 1,1-dimethylhydrazine (DMHy) were compared. When MMHy was used as an N source, the C concentration in GaAsN drastically increases below 380°C than that in GaAs due to insufficient CHx desorption. In the case of DMHy, N(CH 3)2 is desorbed more readily than CHx, Therefore, the C concentration can then be reduced by using DMHy.

Original languageEnglish
Title of host publicationConference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Pages819-822
Number of pages4
DOIs
Publication statusPublished - 2007 Dec 1
Externally publishedYes
Event2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States
Duration: 2006 May 72006 May 12

Publication series

NameConference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Volume1

Other

Other2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
CountryUnited States
CityWaikoloa, HI
Period06/5/706/5/12

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

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    Suzuki, H., Nishimura, K., Lee, H., Saito, K., Kawahigashi, T., Imai, T., Ohshita, Y., & Yamaguchi, M. (2007). Reduction of residual carbon in GaAsN films grown by chemical beam epitaxy. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 (pp. 819-822). [4059755] (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 1). https://doi.org/10.1109/WCPEC.2006.279582